| Patent application number | Description | Published |
|---|
| 20090174045 | Bump Pad Metallurgy Employing An Electrolytic Cu / Electorlytic Ni / Electrolytic Cu Stack - An electroless Cu layer is formed on each side of a packaging substrate containing a core, at least one front metal interconnect layer, and at least one backside metal interconnect layer. A photoresist is applied on both electroless Cu layers and lithographically patterned. First electrolytic Cu portions are formed on exposed surfaces of the electroless Cu layers, followed by formation of electrolytic Ni portions and second electrolytic Cu portions. The electrolytic Ni portions provide enhanced resistance to electromigration, while the second electrolytic Cu portions provide an adhesion layer for a solder mask and serves as an oxidation protection layer. Some of the first electrolytic Cu may be masked by lithographic means to block formation of electrolytic Ni portions and second electrolytic Cu portions thereupon as needed. Optionally, the electrolytic Ni portions may be formed directly on electroless Cu layers. | 07-09-2009 |
| 20090184407 | METHOD TO RECOVER UNDERFILLED MODULES BY SELECTIVE REMOVAL OF DISCRETE COMPONENTS - Methods and reworked intermediate and resultant electronic modules made thereby, whereby a component in need of rework is located and removed from the module to reveal encapsulated solder connections residing within an underfill matrix. Heights of both the solder connections and underfill matrix are reduced, followed by etching the solder out of the solder connections to form openings within the underfill matrix. The underfill material is then removed to expose metallurgy of the substrate. A blank having a release layer with an array of solder connections is aligned with the exposed metallurgy, and this solder array is transferred from the blank onto the metallurgy. The transferred solder connections are then flattened using heat and pressure, followed by attaching solder connections of a new component to the flattened solder connections and underfilling these reworked solder connections residing between the new chip and substrate. | 07-23-2009 |
| 20090267228 | INTERMETALLIC DIFFUSION BLOCK DEVICE AND METHOD OF MANUFACTURE - One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer. | 10-29-2009 |
| 20100258335 | STRUCTURES FOR IMPROVING CURRENT CARRYING CAPABILITY OF INTERCONNECTS AND METHODS OF FABRICATING THE SAME - Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy. | 10-14-2010 |
| 20100258940 | BALL-LIMITING-METALLURGY LAYERS IN SOLDER BALL STRUCTURES - A solder ball structure and a method for forming the same. The structure includes (i) a first dielectric layer which includes a top dielectric surface, (ii) an electrically conductive line, (iii) a second dielectric layer, (iv) a ball-limiting-metallurgy (BLM) region, and (v) a solder ball. The BLM region is electrically connected to the electrically conductive line and the solder ball. The BLM region has a characteristic that a length of the longest straight line segment which is parallel to the top dielectric surface of the first dielectric layer and is entirely in the BLM region does not exceed a pre-specified maximum value. The pre-specified maximum value is at most one-half of a maximum horizontal dimension of the BLM region measured in a horizontal direction parallel to the top dielectric surface of the first dielectric layer. | 10-14-2010 |
| 20110162876 | CURRENT SPREADING IN ORGANIC SUBSTRATES - Solutions for improving current spreading in organic substrates are disclosed. In one aspect, a packaging substrate is disclosed, the packaging substrate comprising: a substrate base having a first surface and a second surface; and a controlled collapse chip connect (C4) pad over a portion of the first surface, the C4 pad including: an electrolessly plated copper (Cu) layer over the first surface; an electrolytic nickel (Ni) portion over the first electrolytic Cu portion; and a first electrolytic Cu portion over the electrolytic Ni portion; wherein the electrolessly plated Cu layer has a portion extending in one direction away from the C4 pad. | 07-07-2011 |
