| Patent application number | Description | Published |
| 20100025786 | Method for Manufacturing a Diaphragm on a Semiconductor Substrate and Micromechanical Component Having Such a Diaphragm - A method for manufacturing a diaphragm, on a semiconductor substrate, includes the method operations or tasks of a) providing a semiconductor substrate, b) producing trenches in the semiconductor substrate, webs made of semiconductor substrate remaining between the trenches, c) producing an oxide layer on the walls of the trenches with the aid of a thermal oxidation method, d) producing access openings in a cover layer produced in a preceding method operation or task on the semiconductor substrate, to expose the semiconductor substrate in the area of the webs, e) isotropic etching of the semiconductor substrate exposed in method operation or task d) using a method selective to the oxide layer and to the cover layer, at least one cavity being produced in the webs below the cover layer, which is laterally delimited by the oxide layer of at least one trench, and f) depositing a sealing layer to seal the access openings in the cover layer. | 02-04-2010 |
| 20100170346 | SENSOR ELEMENT FOR CAPACITIVE DIFFERENTIAL-PRESSURE SENSING - A sensor design, respectively a micromechanical sensor structure for capacitive relative-pressure measurement, that will allow very small pressure differentials to be reliably recorded at high absolute pressures even in harsh, particle-laden measuring environments. For that purpose, the micromechanical sensor element includes a deflectable diaphragm structure which is provided with at least one deflectable electrode, and a fixed support structure for at least one fixed counter-electrode which is located opposite the deflectable electrode. The diaphragm structure includes two mutually parallel configured diaphragms that are joined rigidly to one another via at least one connecting crosspiece, so that each application of force to one of the two diaphragms is directly transmitted to the respective other diaphragm. The first diaphragm is able to be pressurized by a first measuring pressure emanating from the front side of the sensor element, and the second diaphragm is able to be pressurized by a second measuring pressure emanating from the rear side of the sensor element. The fixed counter-electrode is located in the sealed volume between the two diaphragms of the diaphragm structure. | 07-08-2010 |
| 20100176469 | MICROMECHANICAL COMPONENT AND METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT - A micromechanical component includes a substrate that has a front side and a backside, the front side having a functional pattern, which functional pattern is electrically contacted to the backside in a contact region. The substrate has at least one contact hole in the contact region, which extends into the substrate, starting from the backside. | 07-15-2010 |
| 20100260974 | Method for Manufacturing a Micromechanical Component, and Micromechanical Component - A micromechanical method for manufacturing a cavity in a substrate, and a micromechanical component manufactured with this method. In this method, in a first step a first layer is produced on or in a substrate. At least one second layer is then applied onto the first layer. An access hole is produced in this second layer. Material of the first layer and of the substrate can be dissolved out through this hole, so that a cavity is produced in the substrate beneath at least a portion of the second layer. This second layer above the cavity can subsequently be used as a membrane. In addition, the possibility also exists of depositing further layers onto the second layer, only the totality of which layers constitutes the membrane. The material of the first layer is selected so that dissolving out the material of the first layer produces a transition edge in the first layer, which edge at is at a predefinable angle between the substrate and the second layer. | 10-14-2010 |
| 20110048137 | Pressure sensor - A simple to implement contacting variant makes it possible to create a reliable electrical connection between the sensor element and the evaluation electronics of a pressure sensor, including at least one media-resistant sensor element, evaluation electronics in the form of at least one additional component connected electrically to the sensor element, and a multipart housing, the sensor element being situated in a first housing area having at least one pressure connection, and the evaluation electronics being situated in a second sealed housing area which is separated from the first housing area by a separating wall. The electrical connection between the sensor element and the evaluation electronics is implemented in the form of media-resistant bonding wires which are guided from the first into the second housing area through the bonded joint area between the separating wall and an additional housing part. | 03-03-2011 |
| 20110127674 | LAYER STRUCTURE FOR ELECTRICAL CONTACTING OF SEMICONDUCTOR COMPONENTS - A layer structure for the electrical contacting of a semiconductor component having integrated circuit elements and integrated connecting lines for the circuit elements, which is suitable in particular for use in a chemically aggressive environment and at high temperatures, i.e., in so-called “harsh environments,” and is simple to implement. This layer structure includes at least one noble metal layer, in which at least one bonding island is formed, the noble metal layer being electrically insulated from the substrate of the semiconductor component by at least one dielectric layer, and having at least one ohmic contact between the noble metal layer and an integrated connecting line. The noble metal layer is applied directly on the ohmic contact layer. | 06-02-2011 |