| Patent application number | Description | Published |
|---|
| 20080230695 | Method of imaging radiation from an object on a detection device and an inspection device for inspecting an object - A method of imaging radiation from an object on a detection device. The method includes directing a beam of coherent radiation to the object, scanning the beam of radiation over an angle in or out of a plane of incidence relative to the object, and imaging scattered radiation from the object on the detection device. | 09-25-2008 |
| 20080259291 | Pellicle, lithographic apparatus and device manufacturing method - A pellicle for integrated circuit equipment operating in an EUV range includes a multi-layered structure of alternating layers. The pellicle is constructed and arranged to reflect or absorb undesired radiation and to intercept debris to enhance the spectral purity of a radiation beam. | 10-23-2008 |
| 20080259298 | Lithographic apparatus and device manufacturing method - A lithographic apparatus for maskless EUV applications includes an illumination system constructed and arranged to condition a radiation beam and to supply the conditioned radiation beam to a spatial light modulator, a substrate table constructed and arranged to hold a substrate, and a projection system constructed and arranged to project the conditioned radiation beam onto a target portion of the substrate. The illumination system includes a field facet mirror constructed and arranged to define a field of the conditioned radiation beam. The field facet mirror is constructed and arranged to optically match a source of radiation and the illumination system. | 10-23-2008 |
| 20080266654 | Extreme ultraviolet microscope - An extreme ultraviolet (EUV) microscope configured to analyze a sample. The microscope includes a source of EUV radiation constructed and arranged to generate the EUV radiation with a wavelength at least in a range of about 2-6 nm, and an optical system constructed and arranged to illuminate the sample with the EUV radiation and to collect a radiation emanating from the sample. The optical system is arranged with at least one mirror that includes a multilayer structure for in-phase reflection of at least a portion of the radiation in the range of about 2-6 nm. | 10-30-2008 |
| 20080297747 | Lithographic Apparatus and Device Manufacturing Method - One or more patterning arrays are mounted to a mounting plate via height adjustment structures that enable the flatness of the active surfaces of the patterning arrays to be controlled. The height adjustment structures may comprise an array of piezoelectric actuators or screws. Alternatively, the backside of the patterning means may be polished to optical flatness and bonded by crystal bonding to an optically flat surface of a rigid mounting body. | 12-04-2008 |
| 20080309899 | Lithographic Apparatus and Method - Systems and methods are provided for measuring aberration in a lithographic apparatus. A radiation beam is modulated using an array of individually controllable elements, and the modulated beam is projected using a projection system. A pattern is provided on the array of individually controllable elements to modulate the radiation beam, and the pattern comprises a repeating structure that is formed from a plurality of features that are dimensioned such that first order diffraction of the radiation beam substantially fills the pupil of the projection system. A sensor detects the projected radiation and measures interference in the radiation projected by the projection system. Aberration in the detected radiation beam is then measured. | 12-18-2008 |
| 20090033889 | Lithographic apparatus and device manufacturing method - A lithographic apparatus includes an illumination system configured to condition a beam of radiation; a pattern support configured to hold a patterning device, the patterning device configured to pattern the beam of radiation to form a patterned beam of radiation; a substrate holder configured to hold a substrate, the substrate holder including a support surface in contact with the substrate; a projection system configured to project the patterned beam of radiation onto the substrate; and a cleaning system including a cleaning unit, the cleaning unit constructed and arranged to generate radicals on the support surface of the substrate holder to remove contamination therefrom. | 02-05-2009 |
| 20090033897 | Limiting a Portion of a Patterning Device Used to Pattern A Beam - A system and method are used to limit a proportion of a programmable patterning means used to pattern a substrate. This is done such that a size of a repeated pattern to be exposed on the substrate is an integer multiple of a size of a pattern exposed on the substrate by the patterned beam. | 02-05-2009 |
| 20090040492 | Lithographic apparatus and device manufacturing method - A source configured to generate radiation for a lithographic apparatus is disclosed. The source includes an anode, and a cathode. The cathode and the anode are configured to create a discharge in a fuel in a discharge space between the anode and the cathode so as to generate a plasma, the cathode and the anode positioned relative to each other so that, in use, current lines extending between the anode and the cathode are substantially curved so as to create a force that substantially radially compresses the plasma only in a region proximate an upper surface of the cathode or of the anode. | 02-12-2009 |
| 20090213353 | Lithographic Apparatus and Device Manufacturing Method - Provided is a method and system for facilitating use of a plurality of individually controllable elements to modulate the intensity of radiation received at each focusing element of an array of focusing elements to control the intensity of the radiation in the areas on the substrate onto which the focusing elements direct the radiation. | 08-27-2009 |
| 20100296073 | Lithographic Apparatus, Substrate Table, and Method for Enhancing Substrate Release Properties - A lithographic apparatus includes an illumination system constructed and arranged to condition a radiation beam, and a support constructed and arranged to support a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The apparatus also includes a substrate table constructed and arranged to hold a substrate, and a projection system constructed and arranged to project the patterned radiation beam onto a target portion of the substrate. The substrate table includes a chuck having a plurality of protrusions constructed and arranged to support corresponding parts of a bottom surface of a wafer. The top surface of at least one of the protrusions includes a plurality of elements that define a reduced contact area between the substrate and the top surface of the protrusion. | 11-25-2010 |
| 20110007314 | Method and apparatus for angular-resolved spectroscopic lithography characterization - An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference. | 01-13-2011 |
| 20110013274 | EXTREME ULTRAVIOLET MICROSCOPE - An extreme ultraviolet (EUV) microscope configured to analyze a sample. The microscope includes a source of EUV radiation constructed and arranged to generate the EUV radiation with a wavelength at least in a range of about 2-6 nm, and an optical system constructed and arranged to illuminate the sample with the EUV radiation and to collect a radiation emanating from the sample. The optical system is arranged with at least one mirror that includes a multilayer structure for in-phase reflection of at least a portion of the radiation in the range of about 2-6 nm. | 01-20-2011 |
| 20110043777 | TARGET MATERIAL, A SOURCE, AN EUV LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD USING THE SAME - A target material is configured to be used in a source constructed and arranged to generate a radiation beam having a wavelength in an extreme ultraviolet range. The target material includes a Gd-based composition configured to modify a melting temperature of Gd. | 02-24-2011 |
| 20110043791 | Metrology Method and Apparatus, Lithographic Apparatus, Device Manufacturing Method and Substrate - A metrology apparatus is arranged to illuminate a plurality of targets with an off-axis illumination mode. Images of the targets are obtained using only one first order diffracted beam. Where the target is a composite grating, overlay measurements can be obtained from the intensities of the images of the different gratings. Overlay measurements can be corrected for errors caused by variations in the position of the gratings in an image field. | 02-24-2011 |
