| Patent application number | Description | Published |
|---|
| 20090140394 | Semiconductor Device and Method of Forming Through Hole Vias in Die Extension Region Around Periphery of Die - A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die. | 06-04-2009 |
| 20090166785 | Semiconductor Device with Optical Sensor and Method of Forming Interconnect Structure on Front and Backside of the Device - A semiconductor package has a semiconductor die with an optically active region which converts light to an electrical signal. An expansion region is formed around the semiconductor die. A through hole via (THV) is formed in the expansion region. Conductive material is deposited in the THV. A passivation layer is formed over the semiconductor die. The passivation layer allows for passage of light to the optically active region of the semiconductor die. A glass layer is applied to the passivation layer. A first RDL is electrically connected between the THV and a contact pad of the semiconductor die. Additional RDLs are formed on a front and back side of the semiconductor die. An under bump metallization (UBM) layer is formed over and electrically connected to the intermediate conduction layer. Solder material is deposited on the UBM and reflowed to form a solder bump. | 07-02-2009 |
| 20090302452 | MOUNTABLE INTEGRATED CIRCUIT PACKAGE-IN-PACKAGE SYSTEM - A mountable integrated circuit package-in-package system includes: providing an interface integrated circuit package system with a terminal having a plated bumped portion of an inner encapsulation; mounting the interface integrated circuit package system over a package carrier with the terminal facing away from the package carrier; connecting the package carrier and a pad extension of the terminal; and forming a package encapsulation over the interface integrated circuit package system with the terminal exposed. | 12-10-2009 |
| 20100006993 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH CHIP ON LEAD - An integrated circuit package system includes: providing a lead having a lead connection surface for connectivity to a next level system; attaching an integrated circuit over the lead having the lead connection surface substantially within a region below a perimeter of the integrated circuit without a die paddle, a substrate conductor, or a redistribution layer; and attaching a die connector to the integrated circuit and the lead. | 01-14-2010 |
| 20100029046 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH CONCAVE TERMINAL - An integrated circuit package system includes: connecting a concave terminal and an integrated circuit; and forming an encapsulation, having a bottom side, over the integrated circuit and the concave terminal with the concave terminal within the encapsulation. | 02-04-2010 |
| 20100140763 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH STACKED PADDLE AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming a package paddle and a terminal adjacent to the package paddle; mounting a stack paddle over the package paddle with the stack paddle at a non-center offset with the package paddle; mounting a stack integrated circuit over the stack paddle; and encapsulating the stack integrated circuit and the stack paddle. | 06-10-2010 |
| 20100140789 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH EXPOSED TERMINAL INTERCONNECTS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a lead; mounting an inner package so that the lead is peripheral to the inner package, and the inner package having a connection pad; forming an exposed terminal interconnect on the connection pad; and encapsulating the inner package, and partially encapsulating the exposed terminal interconnect with an encapsulation. | 06-10-2010 |
| 20100289128 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH LEADS AND TRANSPOSER AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: conductively bonding a first surface of a transposer to an inner end of a lead separate from the transposer; conductively bonding a die to the first surface of the transposer; and encapsulating the inner end with a mold compound having a bottom mold surface that is exposed and is coplanar with a surface of the transposer opposite the first surface. | 11-18-2010 |
| 20100308459 | Semiconductor Device and Method of Forming Through Hole Vias in Die Extension Region Around Periphery of Die - A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die. | 12-09-2010 |
| 20100308467 | Semiconductor Device and Method of Forming Through Hole Vias in Die Extension Region Around Periphery of Die - A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die. | 12-09-2010 |
| 20100311206 | Semiconductor Device and Method of Forming Through Hole Vias in Die Extension Region Around Periphery of Die - A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die. | 12-09-2010 |
| 20110049662 | Semiconductor Device with Optical Sensor and Method of Forming Interconnect Structure on Front and Backside of the Device - A semiconductor device includes a carrier and semiconductor die having an optically active region. The semiconductor die is mounted to the carrier to form a separation between the carrier and the semiconductor die. The semiconductor device further includes a passivation layer disposed over a surface of the semiconductor die and a glass layer disposed over a surface of the passivation layer. The passivation layer has a clear portion for passage of light to the optically active region of the semiconductor die. The semiconductor device further includes an encapsulant disposed over the carrier within the separation to form an expansion region around a periphery of the semiconductor die, a first via penetrating the expansion region, glass layer, and passivation layer, a second via penetrating the glass layer and passivation layer to expose a contact pad on the semiconductor die, and a conductive material filling the first and second vias. | 03-03-2011 |
| 20110068447 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH CIRCUITRY STACKING AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming a lead to include a first tip at one end, a second tip on the end opposite from the first tip with a connect area between each end located above the first tip, and a first tier section or a second tier section located between the connect area and the second tip; connecting a bottom component assembly to the first tier section or the second tier section; connecting a top component assembly over the connect area; and applying an encapsulant over and under the connect area with the first tip exposed. | 03-24-2011 |
| 20110068458 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH A LEADED PACKAGE AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a first device having a first exposed side and a first inward side; connecting a second device having a second exposed side and a second inward side facing the first inward side to the first device, the second device having planar dimensions less than planar dimensions of the first device; connecting a system connector to a perimeter of the first inward side, the system connector having an exposed leg partially vertical and an exposed foot partially horizontal; and applying an encapsulant exposing the first exposed side, the second exposed side, the exposed leg, and the exposed foot, the exposed leg offset from the encapsulant, the exposed foot on an end of the system connector opposite the first device. | 03-24-2011 |
