Patent application number | Description | Published |
20080315342 | Semiconductor Device with a Bulk Single Crystal on a Substrate - Device and method of forming a device in which a substrate ( | 12-25-2008 |
20090053453 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer. | 02-26-2009 |
20100133584 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF MANUFACTURE THEREOF - A semiconductor device structure comprising a first bulk crystal semiconductor material and a second bulk crystal semiconductor material provided on a surface of the first bulk crystal semiconductor material with or without a deliberate intermediate region, the second bulk crystal semiconductor material being a Group II-VI material dissimilar to the first bulk crystal semiconductor material, wherein portions of the first and/or second bulk crystal semiconductor material have been selectively removed to produce a patterned area of reduced thickness of the first and/or second bulk crystal semiconductor and preferably to expose a patterned area of the said surface of the first and/or second bulk crystal semiconductor material. | 06-03-2010 |
20100139555 | APPARATUS FOR CRYSTAL GROWTH - Apparatus for vapour phase growing of crystals having a single multi-zone heater arranged to heat a heated zone to give a predetermined temperature profile along the length of the heated zone. A generally U-shaped tube having a first limb, a second limb, and a linkage connecting the first and second limbs is located on the heated zone. The first limb contains a source material. The second limb supports a seed such that the source material and seed are spaced longitudinally within the heated zone to provide a predetermined temperature differential between the source and seed. The crystal is grown on the seed. | 06-10-2010 |
20100327277 | SEMICONDUCTOR DEVICE WITH A BULK SINGLE CRYSTAL ON A SUBSTRATE - Device and method of forming a device in which a substrate ( | 12-30-2010 |
20110024877 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer. | 02-03-2011 |
20110073034 | APPARATUS AND PROCESS FOR CRYSTAL GROWTH - The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers. | 03-31-2011 |