Patent application number | Description | Published |
20100258528 | CHEMICAL MECHANICAL POLISHING OF SILICON CARBIDE COMPRISING SURFACES - Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of eth silicon carbide surface is removed. | 10-14-2010 |
20100260977 | CHEMICAL MECHANICAL FABRICATION (CMF) FOR FORMING TILTED SURFACE FEATURES - A method of chemical-mechanical fabrication (CMF) for forming articles having tilted surface features. A substrate is provided having a patterned surface including two different layer compositions or a non-planar surface having at least one protruding or recessed feature, or both. The patterned surface are contacted with a polishing pad having a slurry composition, wherein a portion of surface being polished polishes at a faster polishing rate as compared to another portion to form at least one tilted surface feature. The tilted surface feature has at least one surface portion having a surface tilt angle from 3 to 85 degrees and a surface roughness<3 nm rms. The tilted surface feature includes a post-CMF high elevation portion and a post-CMF low elevation portion that defines a maximum height (h), wherein the tilted surface feature defines a minimum lateral dimension (r), and h/r is ≧0.05. | 10-14-2010 |
20110221039 | DEFECT CAPPING FOR REDUCED DEFECT DENSITY EPITAXIAL ARTICLES - An epitaxial article includes a substrate having a substrate surface having a substrate surface composition including crystalline defect or amorphous regions and crystalline non-defect regions. The crystalline defect or amorphous regions are recessed from the substrate surface by surface recess regions. A capping material fills the surface recess regions to provide capped defects that extend from a top of the defect regions to the substrate surface. The capping material is compositionally different from the substrate surface composition. An epitaxial layer over the substrate surface provides an average crystalline defect density in at least one area having a size ≧0.5 μm | 09-15-2011 |
20120070991 | CHEMICAL MECHANICAL POLISHING OF SILICON CARBIDE COMPRISING SURFACES - Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed. | 03-22-2012 |
20120252213 | CHEMICAL MECHANICAL POLISHING OF GROUP III-NITRIDE SURFACES - A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed. | 10-04-2012 |
20130237041 | DEFECT CAPPING METHOD FOR REDUCED DEFECT DENSITY EPITAXIAL ARTICLES - A method for forming an epitaxial layer on a substrate surface having crystalline defect or amorphous regions and crystalline non-defect regions includes preferential polishing or etching the crystalline defect or amorphous regions relative to the crystalline non-defect regions to form a decorated substrate surface having surface recess regions. A capping layer is deposited on the decorated substrate surface to cover the crystalline non-defect regions and to at least partially fill the surface recess regions. The capping layer is patterned by removing the capping layer over the crystalline non-defect regions to form exposed non-defect regions while retaining the capping layer in at least a portion of the surface recess regions. Selective epitaxy is then used to form the epitaxial layer, wherein the capping layer in the surface recess regions restricts epitaxial growth of the epitaxial layer over the surface recess regions. | 09-12-2013 |
20140124793 | SMOOTH DIAMOND SURFACES AND CMP METHOD FOR FORMING - A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH≦3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (<)2 μm in size. The diamond surface is pressed with respect to a polishing pad providing a Shore D Hardness less than 99 having the slurry in between while rotating the polishing pad relative to the diamond surface to form a smooth diamond surface having a root mean square (rms) surface roughness less than 15 nm. | 05-08-2014 |