| Patent application number | Description | Published |
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| 20080212097 | Method of inspection, a method of manufacturing, an inspection apparatus, a substrate, a mask, a lithography apparatus and a lithographic cell - Each target used in a method of measuring overlay using a scatterometer includes a first portion and a second portion, the first portion has features varying only in a first direction and the second portion has features only varying in a second direction. The first and second directions are orthogonal, thus eliminating cross talk between the directions, and improving the accuracy of overlay error calculations. | 09-04-2008 |
| 20080218767 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method, substrate for use in the methods - An overlay marker for use with a scatterometer includes two overlying two-dimensional gratings. The two gratings have the same pitch but the upper grating has a lower duty ratio. Cross-talk between X and Y overlay measurements can therefore be avoided. The gratings may be directly overlying or off set so as to be interleaved in one or two directions. | 09-11-2008 |
| 20080239265 | Angularly resolved scatterometer, inspection method, lithographic apparatus, lithographic processing cell device manufacturing method and alignment sensor - An angularly resolved scatterometer uses a broadband radiation source and an acousto-optical tunable filter to select one or more narrowband components from the broadband beam emitted by the source for use in measurements. A feedback loop can be used to control the intensity of the selected narrowband components to reduce noise. | 10-02-2008 |
| 20080239318 | Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus - In a method of measuring asymmetry in a scatterometer, a target portion is illuminated twice, first with 0° of substrate rotation and secondly with 180° of substrate rotation. One of those images is rotated and then that rotated image is subtracted from the other image. In this way, asymmetry of the scatterometer can be corrected. | 10-02-2008 |
| 20080259343 | Angularly resolved scatterometer and inspection method - In an angularly resolved scatterometer, an aperture plate including at least one obscuration extending into the image of the pupil plane is provided. Defocus values of a target pattern are determined from the radial distance between the innermost point of the images of the obscurations and the nominal center if the pupil image. Defocus errors are compensated for by capturing a plurality of normalization images using a reference plate at a plurality of different defocus positions and subtracting a suitable normalization from the measurement spectrum of a target pattern | 10-23-2008 |
| 20080279442 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method - A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring. | 11-13-2008 |
| 20080311344 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method - An overlay target on a substrate is disclosed, the overlay target including a periodic array of structures wherein every n | 12-18-2008 |
| 20090027691 | Lithographic Apparatus and Device Manufacturing Method with Reduced Scribe Lane Usage for Substrate Measurement - In a device manufacturing method and a metrology apparatus, metrology measurements are executed using radiation having a first wavelength. Subsequently a grid of conducting material is applied on the substrate, the grid having grid openings which in a first direction in the plane of the grid are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate. | 01-29-2009 |
| 20090094005 | Method of Optimizing a Model, a Method of Measuring a Property, A Device Manufacturing Method, a Spectrometer and a Lithographic Apparatus - A set of parameters used in a model of a spectrometer includes free parameters and fixed parameters. A first set of values for the parameters is set and the model is used to generate a first spectrum. A value of one of the fixed parameters is changed and a second spectrum is generated. An inverse of the model of the spectrometer is then applied to the second spectrum to generate a set of values for the parameters, the values being the same as the first set of values except for one or more of the free parameters. If the free parameter has significantly changed the fixed parameter is designated a free parameter. | 04-09-2009 |
| 20090097008 | Alignment Method and Apparatus, Lithographic Apparatus, Metrology Apparatus and Device Manufacturing Method - An alignment sensor includes a spatially coherent radiation source that supplies a radiation beam to an angle-resolved scatterometer. Alignment is performed by detecting beats in the scatter spectrum during scanning of the substrate relative to the scatterometer. | 04-16-2009 |
| 20090135424 | Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method for Determining A Parameter of a Target Pattern - In a method for determining a structure parameter of a target pattern, a first series of calibration spectra are determined from at least one reference pattern, each spectra being determined using a different known value of at least one structure parameter of the respective reference pattern. The first series of calibration spectra does not take into account parameters of an apparatus used to produce the reference pattern. A representation of each of the first series calibration spectra is stored in a central library. A second series of calibration spectra corresponding to at least one of the stored spectra for a target spectrum is determined using the parameters of the apparatus for measuring the target spectrum. A measured target spectrum is produced by directing a beam of radiation onto the target pattern. The measured target spectrum and the second series of calibration spectra are compared, where this comparison is used to derive a value for the structure parameter of the target pattern. | 05-28-2009 |
| 20090244538 | Lithographic Apparatus and Device Manufacturing Method Using Overlay Measurement - A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction. | 10-01-2009 |
| 20090262366 | Angularly Resolved Scatterometer - An angularly resolved scatterometer uses a broadband radiation source and an acousto-optical tunable filter to select one or more narrowband components from the broadband beam emitted by the source for use in measurements. A feedback loop can be used to control the intensity of the selected narrowband components to reduce noise. | 10-22-2009 |
| 20090273783 | Angularly Resolved Scatterometer and Inspection Method - An inspection method is provided to determine a value related to a parameter of a target pattern printed on a substrate by a lithographic process used to manufacture a device layer on a substrate. The inspection method can include using an optical system with a high-NA objective lens, where the high-NA objective lens includes an object plane and a pupil plane. The inspection method can also include providing an aperture member to define at least one obscuration, determining a radial distance between a radially innermost point of each dark area and a nominal center of an image in a pupil plane, and determining an axial distance between the target and an object plane from the determined radial distance. | 11-05-2009 |
| 20090294635 | Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method - In a scatterometry apparatus having an illumination aperture stop, a field stop is provided at an intermediate image to control a spot size on a substrate. The field stop may be apodized, e.g., having a transmissivity in the form of a trapezium or a Gaussian shape. | 12-03-2009 |
| 20090296081 | Metrology Tool, System Comprising a Lithographic Apparatus and a Metrology Tool, and a Method for Determining a Parameter of a Substrate - A metrology tool is arranged to measure a parameter of a substrate that has been provided with a pattern in a lithographic apparatus. The metrology tool includes a base frame, a substrate table, a sensor, a displacement system, a balance mass, and a bearing. The substrate table is constructed and arranged to hold the substrate. The sensor is constructed and arranged to measure a parameter of the substrate. The displacement system is configured to displace the substrate table or the sensor with respect to the other in a first direction. The bearing is configured to movably support the first balance mass so as to be substantially free to translate in a direction opposite of the first direction in order to counteract a displacement of the substrate table or sensor in the first direction. | 12-03-2009 |
| 20100065987 | IMPRINT LITHOGRAPHY - A method of determining a position of a substrate relative to an imprint template is described, wherein the imprint template has at least three gratings and the substrate has at least three gratings positioned such that each imprint template grating forms a composite grating with an associated substrate grating, the at least three imprint template gratings and associated substrate gratings having offsets relative to one another. The method includes detecting an intensity of radiation which is reflected by the three composite gratings, and using the detected intensities to determine displacement of the substrate or imprint template from a position. | 03-18-2010 |
| 20100068830 | MARKER STRUCTURE AND METHOD FOR CONTROLLING ALIGNMENT OF LAYERS OF A MULTI-LAYERED SUBSTRATE - The invention includes a lithographic system having a first source for generating radiation with a first wavelength and an alignment system with a second source for generating radiation with a second wavelength. The second wavelength is larger than the first wavelength. A marker structure is provided having a first layer and a second layer. The second layer is present either directly or indirectly on top of said first layer. The first layer has a first periodic structure and the second layer has a second periodic structure. At least one of the periodic structures has a plurality of features in at least one direction with a dimension smaller than 400 nm. Additionally, a combination of the first and second periodic structure forms a diffractive structure arranged to be illuminated by radiation with the second wavelength. | 03-18-2010 |
| 20100091258 | SUBSTRATE MEASUREMENT METHOD AND APPARATUS - A method and apparatus for measurement of a characteristic of a substrate. A target is present on the substrate and a measurement is performed during a scanning movement of the substrate. The scanning movement of the substrate is a linear movement and the measurement includes obtaining a reflected image of the target using a pulsed light source, the duration of a single light pulse being less than 100 psec. A lithographic apparatus includes such a measurement apparatus, and a device manufacturing method includes such a measurement method. | 04-15-2010 |
| 20100231881 | LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - The invention provides a level sensor configured to measure a height level of a substrate comprising: a projection unit to project a measurement beam on the substrate, a detection unit to receive the measurement beam after reflection on the substrate, a processing unit to calculate a height level on the basis of the reflected measurement beam received by the detection unit, wherein the level sensor further comprises a tilt measuring device, wherein the tilt measuring device is arranged to receive at least partially the reflected measurement beam, and configured to provide a tilt signal representative for a tilt of the substrate with respect to a nominal plane. | 09-16-2010 |
| 20100231889 | LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A level sensor configured to determine a height level of a substrate is disclosed. The level sensor includes a projection unit to project a measurement beam having a substantially periodic radiation intensity on the substrate; a detection unit to receive the measurement beam after reflection on the substrate, the detection unit having a detection grating arranged to receive the reflected measurement beam, the detection grating comprising at least one array of three or more segments together having a length substantially equal to a length of a period of the measurement beam projected on the detection grating, and configured to split the reflected measurement beam in three or more reflected measurement beam parts, and three or more detectors each arranged to receive one of the three or more measurement beam parts; and a processing unit to calculate a height level on the basis of the measurement beam parts. | 09-16-2010 |
| 20100233600 | LEVEL SENSOR ARRANGEMENT FOR LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A level sensor arrangement is useable for measuring a height of a surface of a substrate in a lithographic apparatus. The level sensor arrangement is provided with a light source emitting detection radiation towards the substrate, and a detector unit for measuring radiation reflected from the substrate in operation. The light source is arranged to emit detection radiation in a wavelength range in which a resist to be used for processing the substrate in the lithographic apparatus is sensitive. | 09-16-2010 |
| 20100265506 | Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method - An overlay error between two successive layers produced by a lithographic process on a substrate is determined by using the lithographic process to form at least one periodic structure of a same pitch on each of the layers. One or more overlaid pairs of the periodic structures are formed in parallel, but offset relative to each other. A spectrum, produced by directing a beam of radiation onto the one or more pairs of periodic structures is measured. One or more portions of the spectrum are determined in which the relationship between the offset between the one or more pairs of periodic structures and the resultant variation in measured intensity of the spectrum at the one or more portions is more linear than the relationship outside the one or more portions. The offset between the one or more pairs of periodic structures on the basis of intensity measurements of the spectrum in the one or more portions of the spectrum is determined and used to determine the overlay error. | 10-21-2010 |
| 20100277706 | Method of Measurement, an Inspection Apparatus and a Lithographic Apparatus - According to an example, a first layer of a substrate comprises a plurality of gratings having a periodicity P. A second layer of the substrate comprises a plurality of gratings, overlapping with the first set of gratings, and having a periodicity of NP, where N is an integer greater than 2. A first set of gratings has a bias of +d and the second set of gratings has a bias of −d. A beam of radiation is projected onto the gratings and the angle resolved spectrum of the reflected radiation detected. The overlay error is then calculated using the angle resolved spectrum of the reflected radiation. | 11-04-2010 |
| 20100321654 | Method of Overlay Measurement, Lithographic Apparatus, Inspection Apparatus, Processing Apparatus and Lithographic Processing Cell - In order to improve overlay measurement, product marker gratings on a substrate are measured in a lithographic apparatus by an alignment sensor using scatterometry. Then information relating to the transverse profile of the product marker grating, such as its asymmetry, is determined from the measurement. After printing an overlay marker grating on a resist film, the lateral overlay of the overlay marker grating with respect to the product marker grating is measured by scatterometry and using the determined asymmetry information in combination with a suitable process model. The alignment sensor data may be used to first reconstruct the product grating and this information is fed forward to the scatterometer that measures the stack of product and resist grating and light scattered by the stack is used for reconstruction of a model of the stack to calculate overlay. The overlay may then, optionally, be fed back to the lithographic apparatus for correction of overlay errors. | 12-23-2010 |
| 20100328655 | Diffraction Based Overlay Metrology Tool and Method - A method for determining overlay between a first grating ( | 12-30-2010 |
| 20110001254 | Imprint Lithography Apparatus and Method - An imprint lithography apparatus is disclosed that includes an imprint template holder arranged to hold an imprint template, and a plurality of position sensors configured to measure change of the size and/or shape of the imprint template, wherein the position sensors are mechanically isolated from the imprint template. Also disclosed is a lithography method that includes using an imprint template to imprint a pattern onto a substrate, and measuring changes of the size and/or shape of the imprint template while imprinting the pattern onto the substrate. | 01-06-2011 |
| 20110026032 | Method of Assessing a Model of a Substrate, an Inspection Apparatus and a Lithographic Apparatus - A method of assessing a model of a substrate is presented. A scatterometry measurement is taken using radiation at a first wavelength. The wavelength of the radiation is then changed and a further scatterometry measurement taken. If the scatterometry measurements are consistent across a range of wavelengths then the model is sufficiently accurate. However, if the scatterometry measurements change as the wavelength changes then the model of the substrate is not sufficiently accurate. | 02-03-2011 |
| 20110027704 | Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells - In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is foamed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure. | 02-03-2011 |
| 20110043791 | Metrology Method and Apparatus, Lithographic Apparatus, Device Manufacturing Method and Substrate - A metrology apparatus is arranged to illuminate a plurality of targets with an off-axis illumination mode. Images of the targets are obtained using only one first order diffracted beam. Where the target is a composite grating, overlay measurements can be obtained from the intensities of the images of the different gratings. Overlay measurements can be corrected for errors caused by variations in the position of the gratings in an image field. | 02-24-2011 |
| 20110043795 | Inspection method and apparatus - In an aspect, an inspection method for detecting the presence or absence of a defect on an object, the object comprising a recess having a physical depth, is disclosed. The method includes directing radiation at the object, the radiation having a wavelength that is substantially equal to twice an optical depth of the recess, detecting radiation that is re-directed by the object or a defect on the object, and determining the presence or absence of a defect from the re-directed radiation. | 02-24-2011 |
| 20110068510 | IMPRINT LITHOGRAPHY METHOD AND APPARATUS - An imprint lithography method is disclosed that includes bringing an imprint template into contact with imprintable medium provided on a substrate, and directing actinic radiation at the imprintable medium, the actinic radiation being oriented such that it is not perpendicularly incident upon a patterned surface of the imprint template. | 03-24-2011 |
| 20110069292 | Metrology Method and Apparatus, Lithographic Apparatus, and Device Manufacturing Method - A metrology apparatus includes first ( | 03-24-2011 |
| 20110076352 | IMPRINT LITHOGRAPHY - A method of determining an offset between an imprint template and a substrate using an alignment grating on the imprint template and an alignment grating on the substrate is disclosed. The method includes bringing the imprint template alignment grating and the substrate alignment grating sufficiently close together such that they form a composite grating, directing an alignment radiation beam at the composite grating while modulating the relative position of the imprint template and the substrate, detecting the intensity of alignment radiation which is reflected from the composite grating, and determining the offset by analyzing modulation of the detected intensity. | 03-31-2011 |
| 20110085162 | Inspection Method and Apparatus - A method and apparatus is used for inspection of devices to detect processing faults on semiconductor wafers. Illuminating a strip of a die along a scan path with a moving measurement spot. Detecting scattered radiation to obtain an angle-resolved spectrum that is spatially integrated over the strip. Comparing the scattering data with a library of reference spectra, obtained by measurement or calculation. Based on the comparison, determining the presence of a fault of the die at the strip. The measurement spot is scanned across the wafer in a scan path trajectory comprising large (constant) velocity portions and the acquisition of the angle-resolved spectrum is taken, and comparisons are done, at full scan speed. If a long acquisition is performed along a strip across the die in the Y direction, then variation in the acquired spectrum resulting from position variation will primarily depend on the X position of the spot. Spot position variation will occur because no alignment of the spot to the wafer is performed along the high-speed scan path trajectory. A library of reference spectra are obtained for a range of scan paths at respective X-positions on the die to allow for variation in the X position of the high-speed measurement spot. | 04-14-2011 |
| 20110085726 | Tunable Wavelength Illumination System - A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence. | 04-14-2011 |
| 20110095455 | IMPRINT LITHOGRAPHY - An imprint lithography template is provided with an alignment mark, wherein the alignment mark is formed from dielectric material having a refractive index which differs from the refractive index of the imprint lithography template, the dielectric material having a thickness which is such that it provides a phase difference between alignment radiation which has passed through the dielectric material and alignment radiation which has not passed through the dielectric material. | 04-28-2011 |
| 20110109888 | Method and Apparatus for Measuring Line End Shortening, Substrate and Patterning Device - End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated. | 05-12-2011 |
| 20110122496 | Substrate Used in a Method and Apparatus for Angular-Resolved Spectroscopic Lithography Characterization - A substrate includes an overlay target. The overlay target can include two superposed layers. Each of the two superposed layers includes two gratings with a different pitch from each other. | 05-26-2011 |
| 20110128512 | Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method - A scatterometer, configured to measure a property of a substrate, includes a radiation source which produces a radiation spot on a target formed on the surface of the substrate, the size of the radiation spot being smaller than the target in one direction along the target, the position of the radiation spot being moved along the surface in a series of discrete steps. A detector detects a spectrum of the radiation beam reflected from the target and produces measurement signals representative of the spectrum corresponding to each position of the radiation spot. A processor processes the measurement signals produced by the detector corresponding to each position of the radiation spot and derives a single value for the property. | 06-02-2011 |
