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Arazoe
Masaki Arazoe, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100009116 | Round Fiber-Reinforced Plastic Strand, Manufacturing Method Thereof, and Fiber-Reinforced Sheet - It is an object of the present invention to provide round fiber-reinforced plastic strand, a manufacturing method thereof, and a fiber-reinforced sheet which eliminate limitation in forming speed and limit on number of products capable of being manufactured at a time, do not require use of a release agent, eliminate the necessity of operations such as roughing after forming, and thus permit a considerable reduction of the manufacturing cost and a remarkable increase in the product quality. The manufacturing method of the round fiber-reinforced plastic strand of the present invention comprises (a) a step of continuously feeding reinforcing fiber bundles f | 01-14-2010 |
Mei Arazoe, Fukuoka JP
| Patent application number | Description | Published |
|---|---|---|
| 20120019093 | LAMINATED CORE - A laminated core | 01-26-2012 |
Naoki Arazoe, Aichi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100327312 | Group III nitride semiconductor light-emitting device and method for producing the same - A group III nitride semiconductor light-emitting device includes: a conductive support; a p-electrode positioned on the support, a p-type layer containing a group III nitride semiconductor, an active layer and an n-type layer having a first surface, which are positioned in turn on the p-electrode; and an n-electrode positioned on the first surface of the n-type layer. A groove is formed in the first surface of the n-type layer in a pattern such that the first surface of the n-type layer is continuous. A light-transmitting insulating film is formed on side surface and bottom surface of the groove. The groove has a depth at least reaching the p-type layer. The n-electrode is formed in wiring form. | 12-30-2010 |
Naoki Arazoe, Kiyosu-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100163894 | Group III nitride-based compound semiconductor light-emitting device - In the Group III nitride-based compound semiconductor light-emitting device of the invention, an non-light-emitting area is formed in a light-emitting layer. In a light-emitting diode where light is extracted on the side of an n-layer, an outer wiring trace portion and an inner wiring trace portion of an n-contact electrode impedes light emission from the light-emitting layer. Therefore, there are provided, at the interface between a p-layer and a p-contact electrode, high-resistance faces having a width wider than the orthogonal projections of contact areas between the outer and inner wiring trace portions and the n-layer on the interface between the p-contact electrode and the p-layer. Through this configuration, current flow is limited, and portions having a total area equivalent to that of the high-resistance faces of the light-emitting layer serve as non-light-emitting areas. Thus, current can be supplied preferentially to an area of the light-emitting area where the outer wiring trace portion and the inner wiring trace portion are difficult to shade light, whereby light extraction efficiency with respect to supplied current can be enhanced. | 07-01-2010 |
| 20110303938 | Group III nitride semiconductor light-emitting element - A group III nitride semiconductor light-emitting element having improved light extraction efficiency is provided. The light-emitting element has a plurality of dot-like grooves formed on a surface at the side joining to a p-electrode of a p-type layer. The groove has a depth reaching an n-type layer. Side surface of the groove is slanted such that a cross-section in an element surface direction is decreased toward the n-type layer from the p-type layer. Fine irregularities are formed on the surface at the side joining to an n-electrode of the n-type layer, except for a region on which the n-electrode is formed, and a translucent insulating film having a refractive index of from 1.5 to 2.3 is formed on the fine irregularities. Light extraction efficiency is improved by reflection of light to the n-type layer side by the groove and prevention of reflection to the n-type layer side by the insulating film. | 12-15-2011 |
Naoki Arazoe, Nishikasugai-Gun JP
| Patent application number | Description | Published |
|---|---|---|
| 20100081256 | Method for producing group III nitride compound semiconductor element - A method for producing a Group III nitride compound semiconductor element includes growing an epitaxial layer containing a Group III nitride compound semiconductor using a different kind of substrate as an epitaxial growth substrate, adhering a supporting substrate to the top surface of the epitaxial growth layer through a conductive layer, and then removing the epitaxial growth substrate by laser lift-off. Before adhesion of the epitaxial layer and the supporting substrate, a first groove that at least reaches an interface between the bottom surface of the epitaxial layer and the epitaxial growth substrate from the top surface of the epitaxial layer formed on the epitaxial growth substrate and acts as an air vent communicating with the outside of a wafer when the epitaxial layer and the supporting substrate are joined to each other. Next, the epitaxial layer is divided into each chip by separating the epitaxial growth substrate by laser lift-off, and then removing the epitaxial layer serving as the outer periphery of each chip. Next, the outer peripheral side surface of the epitaxial layer of each chip is at least completely covered with an insulating protective film. Next, the supporting substrate is separated into each chip. | 04-01-2010 |