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Arayashiki
Satoshi Arayashiki, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100297956 | RECEIVER, TRANSCEIVER, AND MOBILE TERMINAL DEVICE - The invention provides a control method for generating variable operating currents in relation to input signal power and output signal power and achieving both low noise and low power consumption. Emitter follower circuits are attached to output terminals of a frequency divider for generating a local signal. By adjusting the currents flowing through the emitter follower circuits, the amount of currents flowing into mixers is adjusted. When the amount of currents of local signals flowing into the mixers increases, the effect of noise suppression is expected. The amount of the currents flowing through the emitter follower circuits is changed depending on the amplification factor of variable amplifiers. | 11-25-2010 |
Yusuke Arayashiki, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100176455 | SEMICONDUCTOR DEVICE HAVING INSULATED GATE FIELD EFFECT TRANSISTORS AND METHOD OF FABRICATING THE SAME - A CMOSFET is composed of a P-channel MOSFET and an N-channel MOSFET formed on a silicon substrate. The P-channel MOSFET is formed a first gate insulating film, a first hafnium layer and a first gate electrode which are stacked on the silicon substrate. The N-channel MOSFET is formed a second gate insulating film, a second hafnium layer and a second gate electrode which are stacked on the silicon substrate. A surface density of the second hafnium layer is lower than a surface density of the first hafnium layer. | 07-15-2010 |
Yusuke Arayashiki, Oita-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110187912 | SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid state imaging device according to an embodiment includes a light sensing part which conducts photoelectric conversion on incident light. The solid state imaging device includes a ferroelectric layer including an organic compound on a surface of the light sensing part on which light is incident. The solid state imaging device includes a transparent electrode formed on the ferroelectric layer. | 08-04-2011 |
Yusuke Arayashiki, Oita-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110244649 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: a process to form an element isolation trench on a semiconductor substrate, the element isolation trench having a crystal plane orientation that is different from a crystal plane orientation on a surface of the semiconductor substrate; a process to deposit, on the semiconductor substrate, one of a metal that promotes generation of oxygen radicals and a metal containing film that promotes generation of the oxygen radicals; a process to oxidize the semiconductor substrate; and a process to remove the one of the metal and the metal containing film. | 10-06-2011 |
Yutaka Arayashiki, Hadano-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090027259 | RADAR OSCILLATOR CAPABLE OF PREVENTING LEAK OF OSCILLATION OUTPUT - In order to enable intermittent output of an oscillation signal without essentially producing a leak in response to a pulse signal indicating a transmission timing of a radar wave, a radar oscillator is provided which employs a configuration in which an operation of an oscillating unit itself is alternately changed between an oscillating state and an oscillation stop state by a switch, rather than a configuration in which an output passage of an oscillation signal is switched to be opened and closed as in a conventional radar oscillator. | 01-29-2009 |