Patent application number | Description | Published |
20080265418 | Method of Manufacturing Semiconductor Device, and Semiconductor Device - A semiconductor device including a substrate, a metal wiring on the substrate, an insulation film on the substrate covering the metal wiring, a connection hole in the insulation film which extends to a portion of the metal wiring, a via in the connection hole, and an alloy layer. The metal wiring includes a first metallic material, the alloy layer comprises a portion of the metal wiring and a second metallic material which is different than the first metallic material, and the via extends to the alloy layer. | 10-30-2008 |
20120115270 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SAME - Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor. | 05-10-2012 |
20140151754 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SAME - A solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor. | 06-05-2014 |
Patent application number | Description | Published |
20130303367 | POLYAMIDE COMPOSITION - A polyamide composition containing a polyamide compound (A) and a transition metal compound (B), wherein the polyamide compound (A) contains: from 25 to 50 mol % of a diamine unit, which contains at least one diamine unit selected from the group consisting of an aromatic diamine unit represented by the following formula (I-1), an alicyclic diamine unit represented by the following formula (I-2) and a linear aliphatic diamine unit represented by the following formula (I-3), in an amount in total of 50% by mol or more; from 25 to 50 mol % of a dicarboxylic acid unit, which contains a linear aliphatic dicarboxylic acid unit represented by the following formula (II-1) and/or an aromatic dicarboxylic acid unit represented by the following formula (II-2), in an amount in total of 50% by mol or more; and from 0.1 to 50 mol % of a constitutional unit represented by the following formula (III): | 11-14-2013 |
20140106103 | MULTILAYER INJECTION-MOLDED BODY - A multilayer injection molded article containing a layer (X) formed of a resin composition containing a polyamide compound (A) and a resin (B), and a layer (Y) containing a resin (C) as a major component, wherein the polyamide compound (A) contains from 25 to 50% by mol of a diamine unit, which contains a particular diamine unit in an amount of 50% by mol or more; from 25 to 50% by mol of a dicarboxylic acid unit, which contains a particular dicarboxylic acid unit in an amount of 50% by mol or more; and from 0.1 to 50% by mol of a particular constitutional unit. | 04-17-2014 |
20140117280 | OXYGEN ABSORBER - An oxygen absorber is provided that contains at least one of compounds each having a particular structure, and the oxygen absorber exhibits an oxygen absorbing capability without a metal contained, and is suitable for removing oxygen inside a packaging material packaging foods or the like. | 05-01-2014 |
20140120289 | INJECTION-MOLDED BODY - An injection molded article containing a resin composition containing a polyamide compound (A) and a resin (B), wherein the polyamide compound (A) contains from 25 to 50% by mol of a diamine unit, which contains a particular diamine unit, in an amount of 50% by mol or more; from 25 to 50% by mol of a dicarboxylic acid unit, which contains a particular dicarboxylic acid unit, in an amount of 50% by mol or more; and from 0.1 to 50% by mol of a particular constitutional unit. | 05-01-2014 |
20140127433 | MULTILAYER INJECTION-MOLDED BODY - A multilayer injection molded article containing a layer (A) containing a polyamide resin (A), and a layer (B) containing a resin (B) as a major component, wherein the polyamide resin (A) contains from 25 to 50% by mol of a diamine unit, which contains a particular diamine unit in an amount of 50% by mol or more; from 25 to 50% by mol of a dicarboxylic acid unit, which contains a particular dicarboxylic acid unit in an amount of 50% by mol or more; and from 0.1 to 50% by mol of a particular constitutional unit. | 05-08-2014 |
20140220274 | FILM AND FILM PACKAGING CONTAINER - A film containing a layer formed from a resin composition containing a polyamide compound (A) and a resin (B), wherein the polyamide compound (A) contains from 25 to 50% by mol of a diamine unit, which contains a particular diamine unit, in an amount of 50% by mol or more; from 25 to 50% by mol of a dicarboxylic acid unit, which contains a particular dicarboxylic acid unit, in an amount of 50% by mol or more; and from 0.1 to 50% by mol of a particular constitutional unit. | 08-07-2014 |
20140308405 | OXYGEN-ABSORBING RESIN COMPOSITION AND OXYGEN-ABSORBING MOLDED ARTICLE USING SAME AND MULTILAYER BODY, CONTAINER, INJECTION-MOLDED ARTICLE AND MEDICAL CONTAINER USING THESE - A novel oxygen-absorbing resin composition is not responsive to a metal detector, produces no odor after absorption of oxygen and has excellent oxygen-absorbing performance, and an oxygen-absorbing molded article, and a multilayer body, container, injection-molded article and medical container. Further provided are an oxygen-absorbing resin composition etc. having excellent oxygen-absorbing performance in a wide range of humidity conditions from low to high humidity. The oxygen-absorbing resin composition is an oxygen-absorbing resin composition containing a polyester compound and a transition metal catalyst, in which the polyester compound has at least one constituent unit having a tetralin ring. Furthermore, the oxygen-absorbing molded article of the present invention is formed by molding the oxygen-absorbing resin composition into a film form or a sheet form. Moreover, the multilayer body, container, injection-molded article, medical container, etc. of the present invention are obtained by using the oxygen-absorbing resin composition of the present invention. | 10-16-2014 |
20140370219 | MEDICAL PACKAGING CONTAINER - Provided are a medical packaging container having a polyester resin (A1) including diol units and dicarboxylic units, the diol units including at least one diol unit in an amount of 1 to 30 mol % selected from diol units having a bridged alicyclic skeleton derived from a compound represented by formula (1), formula (2), or formula (3), the dicarboxylic acid units including dicarboxylic acid units having a naphthalene skeleton in an amount of 70 mol % or more; and a manufacturing method of the polyester for the container. | 12-18-2014 |
20140373485 | OXYGEN-ABSORBING RESIN COMPOSITION AND OXYGEN-ABSORBING MULTILAYER BODY USING SAME, AND MOLDED ARTICLE AND MEDICAL CONTAINER USING THESE - Provided is a novel oxygen-absorbing resin composition having excellent oxygen-absorbing performance and suppressing odor generation after absorption of oxygen even if a material responsive to a metal detector is not used. Further provided is an oxygen-absorbing resin composition having excellent oxygen-absorbing performance in a wide range of humidity conditions from low humidity to high humidity. Such an oxygen-absorbing resin composition contains a copolymerized polyolefin compound and a transition metal catalyst, in which the copolymerized polyolefin compound contains at least one constituent unit having a tetralin ring. | 12-25-2014 |
Patent application number | Description | Published |
20090066188 | PIEZOELECTRIC DEVICE, LIQUID DROPLET EJECTING HEAD USING THE SAME, AND PROCESS FOR PRODUCING THE SAME - The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of Pb | 03-12-2009 |
20100039482 | MULTILAYER BODY, PIEZOELECTRIC ELEMENT, AND LIQUID EJECTING DEVICE - A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal. | 02-18-2010 |
20100079555 | LEAD-CONTAINING PEROVSKITE-TYPE OXIDE FILM AND METHOD OF PRODUCING THE SAME, PIEZOELECTRIC DEVICE USING A LEAD-CONTAINING PEROVSKITE-TYPE OXIDE FILM, AS WELL AS LIQUID EJECTING APPARATUS USING A PIEZOELECTRIC DEVICE - Provided is a lead-containing perovskite-type oxide film having principally (100) and/or (001) orientation and containing lead as a chief component, which is over 2 μm thick and exhibits such hysteresis characteristics that two coercive fields are both positive. A method of producing such an oxide film, a piezoelectric device including such an oxide film, and a liquid ejecting apparatus provided with such a piezoelectric device are also provided. | 04-01-2010 |
20110014394 | FILM DEPOSITING APPARATUS AND METHOD - A film depositing apparatus comprises: a vacuum vessel; an evacuating unit for evacuating the interior of the vacuum vessel; a gas supply source for supplying the vacuum vessel with gases necessary for film deposition; a backing plate that is placed within the vacuum vessel for holding a target formed by sintering; a substrate holder for holding a deposition substrate within the vacuum vessel in a face-to-face relation with the backing plate; and a power supply unit for supplying electric power between the backing plate and the substrate holder to generate a plasma within the vacuum vessel, wherein the backing plate has a smaller thermal expansion coefficient than that of the target which has a sinter density of at least 95%, the sinter density representing the ratio of the actual weight of a sintered form of the target to its theoretical weight. | 01-20-2011 |
20110041304 | PIEZOELECTRIC DEVICE, LIQUID DROPLET EJECTING HEAD USING THE SAME, AND PROCESS FOR PRODUCING THE SAME - The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of Pb | 02-24-2011 |
20130197255 | METHOD OF MANUFACTURING WATER REPELLENT FILM AND THEREBY MANUFACTURED WATER REPELLENT FILM - A method of manufacturing a water repellent film includes, before a formation step of forming an organic film on a substrate using a silane coupling agent by a vapor phase deposition method under film formation conditions, a step of specifying the film formation conditions using a test substrate of a same material as the substrate used in the formation step. The film formation condition specifying step includes: specifying film formation temperature to be not lower than a temperature at which the silane coupling agent evaporates and to be lower than a temperature at which the silane coupling agent bumps; and forming an organic film of the silane coupling agent on the test substrate at the specified film formation temperature, measuring by optical microscopic observation a time at which a bead of surplus water repellent material is formed, and specifying the film formation duration to be shorter than the measured time. | 08-01-2013 |
Patent application number | Description | Published |
20080232417 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer. | 09-25-2008 |
20080308788 | QUANTUM DOT SEMICONDUCTOR DEVICE - A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range. | 12-18-2008 |
20090086785 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device is provided with a GaAs substrate, a quantum dot active layer formed over the GaAs substrate, a GaAs layer formed above or below the quantum dot active layer, and a diffraction grating formed from InGaP or InGaAsP and periodically provided along an propagating direction of light in the GaAs layer. | 04-02-2009 |
20090263926 | Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method - An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer. | 10-22-2009 |
20090305442 | LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - The light emitting device comprises a substrate | 12-10-2009 |
20110027926 | Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method - An active layer ( | 02-03-2011 |
20110134950 | Method of manufacturing semiconductor device - The method of manufacturing the semiconductor device comprises the step of forming quantum dots | 06-09-2011 |
20130267052 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer. | 10-10-2013 |
20130267054 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer. | 10-10-2013 |