| Patent application number | Description | Published |
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| 20080200032 | POLISHING METHOD OF SEMICONDUCTOR SUBSTRATE - The present invention relates to a method of polishing a semiconductor substrate, comprising pressing a semiconductor substrate having a film to be polished that is held by a carrier onto a polishing cloth fixed on a revolving polishing table and supplying a polishing slurry to the space between the polishing cloth and the semiconductor substrate, wherein the end point of polishing is determined according to the change in the friction coefficient while the friction coefficient between the semiconductor substrate and the polishing cloth is measured. According to the present invention it is possible to measure friction coefficient accurately in polishing a semiconductor substrate and use the change thereof to determine the end point of polishing. | 08-21-2008 |
| 20100099333 | METHOD AND APPARATUS FOR DETERMINING SHEAR FORCE BETWEEN THE WAFER HEAD AND POLISHING PAD IN CHEMICAL MECHANICAL POLISHING - A method for (a) determining the shear force between a wafer head and a polishing pad in a polishing tool using a CMP polishing tool with a plate above the wafer head which hangs or rests on the plate. The plate is connected to the CMP polishing tool by (b) low friction motion means (c). A load cell sensor is fixed to the framework of the polishing tool or another immovable structure. (d) The load cell determines the force from the leading edge of the plate when the wafer head is in contact with the polishing pad. (e) Signals from the load cell sensor reporting the shear force. A CMP polishing tool which includes elements corresponding to each of points (a)-(e) in the above method. | 04-22-2010 |
| 20100107726 | DEVICE FOR DETERMINING THE COEFFICIENT OF FRICTION OF DIAMOND CONDITIONER DISCS AND A METHOD OF USE THEREOF - A device for determining the coefficient of friction of diamond conditioner discs and a method of use thereof. The device is a solid base means comprising a block of granite with a smooth flat upper surface, a diamond conditioner disc counter surface means comprising a removable sheet of polycarbonate, a means for moving the diamond conditioner disc comprising an assembly parallel to and perpendicular to the surface of the said slab and overlain material along which a plate, the surface of which is parallel to the surface of the assembly and perpendicular to the surface of the said slab and overlain material, is moved by a screw, a means for securing the diamond conditioner disc comprising a holder bolted to the said plate that is capable of riding just above the surface of the slab and overlain material with an anterior face with respect to the direction of motion that is concave and capable of securely holding a diamond conditioner disc placed grinding face down upon the said overlain material the top of which is open so that load may be applied to the diamond conditioner disc and a means for measuring the shear force imparted by the moving diamond conditioner disc comprising a load cell. Shear force and down force are determined using the above apparatus and the coefficient of friction of the diamond conditioner disc and the said sheet are calculated therefrom. | 05-06-2010 |
| 20100112905 | WAFER HEAD TEMPLATE FOR CHEMICAL MECHANICAL POLISHING AND A METHOD FOR ITS USE - The present invention is a planar template for a CMP tool polishing head possessing a means of securing a wafer in CMP polishing where the back surface of the template is held to the polishing head by retaining means and a method for using the planar template. | 05-06-2010 |
| 20100112911 | METHOD AND DEVICE FOR THE INJECTION OF CMP SLURRY - The present invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of the leading edge of the polishing head with a gap of up to 1 inch, the bottom surface of which faces the pad and rests on it with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced between the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities such that all or most of the slurry is introduced between the wafer and the polishing pad and a method of use therefor. | 05-06-2010 |
| 20100159804 | METHOD OF OBSERVING PATTERN EVOLUTION USING VARIANCE AND FOURIER TRANSFORM SPECTRA OF FRICTION FORCES IN CMP - A method of determining pattern evolution of a semiconductor wafer during chemical mechanical polishing prior to polishing end point by determining the periodic change in the variance and FT or FFT frequency spectra of shear force and change in variance and FT or FFT frequency spectra of COF, shear force and/or down force between the semiconductor wafer and the polishing pad. By comparing features of the data and spectra thus obtained, analysis leading to a deeper understanding of the changes that occur as CMP processes occur as well as diagnostic analysis of specific CMP processes and specific wafers can be accomplished | 06-24-2010 |
| 20100186479 | METHOD FOR COUNTING AND CHARACTERIZING AGGRESSIVE DIAMONDS IN CMP DIAMOND CONDITIONER DISCS - The present invention is a method for determining the location of and distinguishing aggressive diamonds from active diamonds on a diamond conditioner disc, comprising: (a) contacting a diamond conditioner disc with a hard surface, wherein the diamond-containing side of the diamond conditioning disc is facing the hard surface, (b) pushing the conditioner disc a sufficient distance that all diamonds could possibly be scratching the surface at the same time and at least a distance corresponding to the length of the said diamond conditioner disc (c) observing number and position of the scratches left by diamonds on the hard surface to determine the number and position of active diamonds on the diamond conditioner disc, and (d) selecting the diamonds, the marks for which are the most pronounced and which comprise 50% or more of the total furrow area observed for all of the active diamonds in descending order of furrow are plus any diamonds in excess of the number needed to achieve said 50% or more whose individual furrow area is 2% or more, which diamonds are determined to be aggressive diamonds, or impressing the diamond conditioner disc under a load onto a hard surface and the impression of the most aggressive diamonds in the hard surface being confirmed by microscopic examination to in turn confirm the position and aggressiveness of the aggressive diamonds observed or (e) contacting a diamond conditioner disc with a hard surface, wherein the diamond-containing side of the diamond conditioning disc is facing the hard surface, (f) pushing the conditioner disc a sufficient distance that all diamonds could possibly be scratching the surface at the same time and at least a distance corresponding to the length of the said diamond conditioner disc (g) observing number and position of the scratches left by diamonds on the hard surface to determine the number and position of active diamonds on the diamond conditioner disc, (h) the hard surface further comprises a layer of contrasting material such that when the diamond conditioner disc moves across the hard surface, the said diamond conditioner disc crosses the limits of the layer entirely from one end to the other and scratches the layer of contrasting material on the hard surface thereby leaving a visible mark, (i) the said layer is between 8 and 15 microns thick and (j) selecting the diamonds which cut entirely through the said layer allowing backlighting to be easily viewed. | 07-29-2010 |
| 20100203811 | METHOD AND APPARATUS FOR ACCELERATED WEAR TESTING OF AGGRESSIVE DIAMONDS ON DIAMOND CONDITIONING DISCS IN CMP - The present invention is a method and apparatus for accelerated pulling and fracturing of aggressive diamonds on a CMP diamond conditioner disc wherein aggressive diamonds of known position are pulled or fractured by contacting the diamond conditioner disc to a plate or sheet of a hard material or a plate or sheet containing discrete structures of hard material relative to which the diamond disc is in motion at a determinable and reproducible rate for a determinable and reproducible period of time and the number and position of the pulled or fractured aggressive diamonds are determined following the completion of said contact. | 08-12-2010 |
| 20100216373 | METHOD FOR CMP UNIFORMITY CONTROL - A method for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of leading edge of the polishing head with a gap of between 0 and 3 inches, the bottom surface facing the pad, which rests on the pad with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced at the junction of the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad, wherein multiple inlets for the introduction of fluids to different points in the channel or directly to the bottom surface of the injector are utilized and some or all of which inlets are fitted with means for controlling the flow of fluid and adjustment is made to the said flow control means during or after polishing to adjust slurry delivery to the wafer surface to improve uniformity of removal rate at the wafer surface. | 08-26-2010 |
| 20100240283 | Method of Chemical Mechanical Polishing - [Problem] To improve polishing efficiency while lowering shear force added to semiconductor wafers while increasing polishing speed, without damaging the wafer's processing surface or the membrane under it. | 09-23-2010 |
| 20110076924 | METHOD OF DETERMINING THE LUBRICATION MECHANISM IN CMP - The present invention is a method for obtaining data easily, accurately and effectively that may be used in determination of Sommerfeld Numbers and COF for CMP polishing. Using the Sommerfeld Numbers and COF values thus obtained the lubrication mechanism of CMP polishing with particular materials and under particular conditions can easily and reliably be studied. The method of the present invention is accomplished by use of CMP polishing tools capable of simultaneously measuring shear force and normal force, and rendering a value for the COF while simultaneously enabling the operator to change pressure on and relative velocity of the CMP wafer and CMP polishing pad in real time. Using the said CMP tool, the pressure and relative velocity may be varied separately or together for the desired length of time according to the needs of the operator so that within one CMP process multiple measurements may be taken under the same process conditions. | 03-31-2011 |
