| Patent application number | Description | Published |
|---|
| 20090256130 | MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT, AND METHODS OF FORMING THE SAME - In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by fabricating a carbon nano-tube (“CNT”) seeding layer by depositing a silicon-germanium layer above the substrate, patterning and etching the CNT seeding layer, and selectively fabricating CNT material on the CNT seeding layer. Numerous other aspects are provided. | 10-15-2009 |
| 20090256131 | MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME - In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (“CNT”) material above the first conductor by: (a) fabricating a CNT seeding layer on the first conductor, wherein the CNT seeding layer comprises silicon-germanium (“Si/Ge”), (b) planarizing a surface of the deposited CNT seeding layer, and (c) selectively fabricating CNT material on the CNT seeding layer; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided. | 10-15-2009 |
| 20090256132 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - In accordance with aspects of the invention, a method of forming a memory cell is provided, the method including forming a steering element above a substrate, and forming a memory element coupled to the steering element, wherein the memory element comprises a carbon-based material having a thickness of not more than ten atomic layers. The memory element may be formed by repeatedly performing the following steps: forming a layer of a carbon-based material, the layer having a thickness of about one monolayer, and subjecting the layer of carbon-based material to a thermal anneal. Other aspects are also described. | 10-15-2009 |
| 20090257270 | DAMASCENE INTEGRATION METHODS FOR GRAPHITIC FILMS IN THREE-DIMENSIONAL MEMORIES AND MEMORIES FORMED THEREFROM - In some aspects, a microelectronic structure is provided that includes (1) a first conducting layer; (2) a first dielectric layer formed above the first conducting layer and having a feature that exposes a portion of the first conducting layer; (3) a graphitic carbon film disposed on a sidewall of the feature defined by the first dielectric layer and in contact with the first conducting layer at a bottom of the feature; and (4) a second conducting layer disposed above and in contact with the graphitic carbon film. Numerous other aspects are provided. | 10-15-2009 |
| 20090278112 | METHODS FOR ETCHING CARBON NANO-TUBE FILMS FOR USE IN NON-VOLATILE MEMORIES - Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube (“CNT”) film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described. | 11-12-2009 |
| 20090283735 | CARBON NANO-FILM REVERSIBLE RESISTANCE-SWITCHABLE ELEMENTS AND METHODS OF FORMING THE SAME - Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the first conductor, a carbon nano-film formed atop the surface and the discontinuous film of metal nanoparticles, and a second conductor disposed above the carbon nano-film. Numerous additional aspects are provided. | 11-19-2009 |
| 20100006811 | CARBON-BASED INTERFACE LAYER FOR A MEMORY DEVICE AND METHODS OF FORMING THE SAME - In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity switching material; (3) a steering element formed above the first conductor; and (4) a second conductor formed above the reversible resistance-switching element and the steering element. Numerous other aspects are provided. | 01-14-2010 |
| 20100012912 | ELECTRONIC DEVICES INCLUDING CARBON-BASED FILMS HAVING SIDEWALL LINERS, AND METHODS OF FORMING SUCH DEVICES - Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects of this invention, such as non-volatile memories, that include (1) a layerstack having a pattern including sidewalls, the layerstack comprising a resistivity-switchable layer disposed above and in contact with a bottom electrode, and a top electrode disposed above and in contact with the resistivity-switchable layer; and (2) a dielectric sidewall liner in contact with the sidewalls of the layerstack; wherein the resistivity-switchable layer includes a carbon-based material, and the dielectric sidewall liner includes an oxygen-poor dielectric material. Numerous additional aspects are provided. | 01-21-2010 |
| 20100044671 | METHODS FOR INCREASING CARBON NANO-TUBE (CNT) YIELD IN MEMORY DEVICES - In some aspects, a method of forming a carbon nano-tube (CNT) memory cell is provided that includes ( | 02-25-2010 |
| 20100072445 | MEMORY CELL THAT INCLUDES A CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - Methods of forming planar carbon nanotube (“CNT”) resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material, patterning the first dielectric material, etching the first dielectric material to form a feature within the first dielectric material, depositing CNT resistivity-switching material over the first dielectric material to fill the feature at least partially with the CNT resistivity-switching material, depositing second dielectric material over the CNT resistivity-switching material, and planarizing the second dielectric material and the CNT resistivity-switching material so as to expose at least a portion of the CNT resistivity-switching material within the feature. Other aspects are also provided. | 03-25-2010 |
| 20100108976 | ELECTRONIC DEVICES INCLUDING CARBON-BASED FILMS, AND METHODS OF FORMING SUCH DEVICES - Methods in accordance with this invention form microelectronic structures, such as non-volatile memories, that include carbon layers, such as carbon nanotube (“CNT”) films, in a way that protects the CNT film against damage and short-circuiting. Microelectronic structures, such as non-volatile memories, in accordance with this invention are formed in accordance with such techniques. | 05-06-2010 |
| 20100108982 | ELECTRONIC DEVICES INCLUDING CARBON NANO-TUBE FILMS HAVING CARBON-BASED LINERS, AND METHODS OF FORMING THE SAME - Methods in accordance with this invention form a microelectronic structure by forming a carbon nano-tube (“CNT”) layer, and forming a carbon layer (“carbon liner”) above the CNT layer, wherein the carbon liner comprises: (1) a first portion disposed above and in contact with the CNT layer; and/or (2) a second portion disposed in and/or around one or more carbon nano-tubes in the CNT layer. Numerous other aspects are provided. | 05-06-2010 |
| 20100245029 | CARBON-BASED FILMS, AND METHODS OF FORMING THE SAME, HAVING DIELECTRIC FILLER MATERIAL AND EXHIBITING REDUCED THERMAL RESISTANCE - Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer disposed above and in contact with the bottom electrode, and (3) a top electrode disposed above and in contact with the resistivity-switchable layer; wherein the resistivity-switchable layer includes a carbon-based material and a dielectric filler material. Numerous additional aspects are provided. | 09-30-2010 |
