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Aoyama, Yokohama-Shi
Hiromitsu Aoyama, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100233986 | RECEIVER - A receiver includes a high-frequency filter which extracts, from a radio signal, a high-frequency signal, a first frequency converter which performs frequency conversion on the high-frequency signal using a first local signal, to obtain a first baseband signal, a second frequency converter which performs frequency conversion on the high-frequency signal using a second local signal, to obtain a second baseband signal, the second local signal having a frequency equal to an integral multiple of a frequency of the first local signal, and a subtraction processing unit configured to multiply the second baseband signal by a control coefficient for amplitude adjustment to obtain a product signal, and subtract the product signal from the first baseband signal to obtain a residual signal. | 09-16-2010 |
Hisako Aoyama, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100102000 | METHOD FOR FILTERING CHEMICAL - A method for filtering a chemical in which a first chemical stored in a first tank is filtered by a filter and a second chemical obtained by the filtering is stored in a second tank has: adding the capture amounts corresponding to the individual first chemicals first to n-th stored in the first tank, and getting an added capture amount; and comparing the added capture amount and a predetermined limit capture amount of the filter, and exchanging the filter based on the comparison result. | 04-29-2010 |
Kazuhiro Aoyama, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100282342 | LIQUID SUPPLYING MEMBER, NEGATIVE PRESSURE UNIT, AND LIQUID DISCHARGING APPARATUS - A deposition of bubbles or foams to an inner wall of a liquid supplying member is prevented, thereby improving ejecting performance of the bubbles or foams. In the liquid supplying member which forms a flow path for supplying a liquid to a liquid discharging apparatus, the inner wall surface has a concave/convex shape in which a mountain portion and a valley portion are repeated at a predetermined spatial frequency. Assuming that an opening diameter of a filter provided for the liquid discharging apparatus is equal to R (μm), one period f (μm) of the spatial frequency lies within a range from R or more to √{square root over (2)}·R or less and a maximum height Ry (μm) of the mountain portion is equal to √{square root over (2)}·R/2 or more. | 11-11-2010 |
Kenji Aoyama, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090206391 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed on the semiconductor substrate at predetermined intervals, a selecting transistor arranged on each of two sides of each of the plurality of word lines in which a spacing between the selecting transistor and an adjacent one of the word lines is not less than three times a width of each of the word lines, an interlayer insulating film formed to cover upper surfaces of the word lines and selecting transistors, a first cavity portion which is located between each pair of adjacent ones of the word lines and whose upper portion is covered with the interlayer insulating film, a second cavity portion which is formed at a side wall portion of the word line adjacent to each selecting transistor which faces the selecting transistor and whose upper portion is covered with the interlayer insulating film, and a third cavity portion which is formed at a side wall portion of each of the selecting transistors and whose upper portion is covered with the interlayer insulating film. | 08-20-2009 |
| 20090212352 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity. | 08-27-2009 |
| 20090218614 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor storage device has a plurality of word lines formed with a predetermined interval on a semiconductor substrate, a selection transistor provided at an end portion of the plurality of word lines, a first insulating film formed so as to cover side surfaces of the word lines, a side surface of the selection transistor, and a surface of the semiconductor substrate between the word lines, a high-permittivity film formed on the first insulation film, a second insulating film formed so as to cover the upper surface of the word lines and the selection transistor, a first air-gap portion located between the word lines and surrounded by the high-permittivity film and the second insulating film, and a second air-gap portion formed via the first insulating film and the high-permittivity film at a sidewall portion, which opposes the selection transistor, of the word line adjacent to the selection transistor, an upper portion of the second air-gap portion being covered by the second insulating film. | 09-03-2009 |
| 20100237398 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor storage device includes a semiconductor substrate, a first insulator, a laminated insulator including a second insulator having fixed charges more than those of the first insulator, a single-layer insulator, memory cells between the semiconductor substrate and the first insulator, each memory cells separated from an adjacent memory cell by a cavity portion and including a tunnel insulator, a charge accumulation layer, an insulator, and a control gate electrode, a first selection gate transistor between the semiconductor substrate and the first insulator, a second selection gate transistor between the semiconductor substrate and the first insulator, between one memory cell and the first selection gate transistor, and in contact with the laminated insulator on a first side face on a memory cell side thereof, and a high-voltage peripheral circuit transistor between the semiconductor substrate and the first insulator, and in contact with the single-layer insulator on a side face thereof. | 09-23-2010 |
| 20110097887 | Semiconductor storage device and method for manufacturing the same - A semiconductor storage device has a plurality of word lines formed with a predetermined interval on a semiconductor substrate, a selection transistor provided at an end portion of the plurality of word lines, a first insulating film formed so as to cover side surfaces of the word lines, a side surface of the selection transistor, and a surface of the semiconductor substrate between the word lines, a high-permittivity film formed on the first insulation film, a second insulating film formed so as to cover the upper surface of the word lines and the selection transistor, a first air-gap portion located between the word lines and surrounded by the high-permittivity film and the second insulating film, and a second air-gap portion formed via the first insulating film and the high-permittivity film at a sidewall portion, which opposes the selection transistor, of the word line adjacent to the selection transistor, an upper portion of the second air-gap portion being covered by the second insulating film. | 04-28-2011 |
| 20110147822 | Semiconductor memory device and method for manufacturing the same - A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity. | 06-23-2011 |
| 20120012916 | Stacked gate nonvolatile semiconductor memory and method for manufacturing the same - A stacked gate nonvolatile semiconductor memory includes at least a memory cell transistor and a selective gate transistor which are formed on a semiconductor substrate. The memory cell transistor includes a floating gate made of a semiconductor material below an interlayer insulating layer and a control gate made of a silicide above the interlayer insulating layer. The selective gate transistor includes a semiconductor layer made of the semiconductor material, a silicide layer made of the silicide and a conductive layer made of a conductive material not subject to silicide process which is formed through the interlayer insulating film so as to electrically connect the semiconductor layer and the silicide layer. | 01-19-2012 |
Makoto Aoyama, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090280978 | EXHAUST GAS PURIFYING CATALYST AND METHOD OF PRODUCING EXHAUST GAS PURIFYING CATALYST - An exhaust gas purifying catalyst | 11-12-2009 |
Noritaka Aoyama, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120088629 | COAST STOP VEHICLE AND COAST STOP METHOD - A coast stop vehicle includes a variator which continuously changes a speed ratio by changing a winding diameter of a belt mounted on pulleys, a sub-transmission mechanism connected in series with the variator and shifting discrete gear positions by changing engaged states of a plurality of frictional engagement elements, and a coast stop unit which stops the rotation of the drive power source and releases the engaged frictional engagement element when the coast stop condition holds during travel. The coast stop unit includes a coast stop prohibiting unit which prohibits the coast stop regardless of the coast stop condition when it is predicted at the time of determining whether or not the coast stop condition holds that a belt tightening force of the pulley falls below an engaging force of the frictional engagement element in the engaged state by the execution of the coast stop. | 04-12-2012 |
Nozomu Aoyama, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100211377 | Apparatus and Method for Supporting Verification of Software Internationalization - In a verification support apparatus, a content analysis section analyzes a content to divide the content into paragraphs, extract region/culture-specific data, and store the analysis results in an analysis result storage section. A first verification section verifies, based on the analysis results, the consistency between the content and locale of a paragraph and the consistency between the paragraph and locale of the region/culture-specific data. A second verification section verifies, based on the analysis results, the correspondence between a paragraph of language A and a paragraph of language B and the consistency between the region/culture-specific data of language A and the region/culture-specific data of language B. A content update section updates the content so that the results of verification by the first verification section or the second verification section can be displayed in a way a person in charge of verification can easily understand. | 08-19-2010 |
Ryusuke Aoyama, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090156779 | BACTERIUM CAPABLE OF PRODUCING ORGANIC ACID, AND METHOD FOR PRODUCTION OF ORGANIC ACID - Provided is a bacterium which is capable of producing an organic acid and is modified so as to have an enhanced 2-oxoglutarate dehydrogenase activity as compared with that of an unmodified strain. An organic acid such as succinic acid can be produced by culturing the bacterium. | 06-18-2009 |
Yasuhiro Aoyama, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110157616 | IMAGE READING APPARATUS, MULTIFUNCTION PRINTER, AND IMAGE READING METHOD - This invention is directed to image reading capable of suppressing EMI unwanted radiation while maintaining image quality. To accomplish this, the following processing is executed when reading an original image by a photoelectric transducer. More specifically, a first driving signal where SSCG spread modulation is applied, and a second driving signal where no SSCG spread modulation is applied are generated from a reference signal. Either the first or second driving signal is selected, and a timing signal for reading the original image is generated based on the selected driving signal. The image signal obtained by the photoelectric transducer is latched using the timing signal. The latched image signal is transferred for subsequent image processing. Upon reading a one-line image original, the second driving signal is selected till the completion of the latch operation, and after the latch operation, the first driving signal is selected for an image signal transfer operation. | 06-30-2011 |
Yukari Aoyama, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080241101 | Skin vitalizing composition for external use anti-aging preparation - The invention provides an epidermal basement membrane structure formation accelerating preparation and a skin external preparation comprising a serine protease inhibitor, and optionally an accelerator of production of extracellular matrix protein components of the epidermal basement membrane. It also provides, as a means for producing artificial skin having an adequately formed basement membrane, an artificial skin-forming medium which comprises a serine protease inhibitor, and optionally an accelerator of production of extracellular matrix protein components of the epidermal basement membrane and a matrix metalloprotease inhibitor, as well as a method for producing the same. | 10-02-2008 |