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Aoyama, Kanagawa-Ken
Jumpei Aoyama, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110175282 | Sheet adjusting device, sheet holding receptacle incorporating same, and image forming apparatus incorporating same - A sheet adjusting device, applicable to a sheet holding receptacle and an image forming apparatus, includes a sheet setting plate to place a sheet thereon, first and second regulating member to slidably move in a given direction, a drive transmission mechanism to transmit a driving power generated by a driving power source to at least one of the first and second regulating members and move the first regulating member in the given direction, and a stopping unit to stop the first regulating member moving toward the sheet on the setting, plate either when a load exceeding a given threshold is given to either the driving power source or the drive transmission mechanism or when a pressure exceeding a given threshold is given to at least one of the first and second regulating members. | 07-21-2011 |
Kenji Aoyama, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100176488 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor memory device includes a word line interconnect layer having a plurality of word lines extending in a word line direction and a bit line interconnect layer having a plurality of bit lines extending in a bit line direction alternately stacked on a silicon substrate. A variable resistance film is disposed between the word line and the bit line. A first pin diode extending in the word line direction is provided between the word line and the variable resistance film, and a second pin diode extending in the bit line direction is provided between the bit line and the variable resistance film. A region of an upper surface of the pin diode other than an immediately underlying region of the variable resistance film is located lower than the immediately underlying region. | 07-15-2010 |
| 20100237400 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes: a multilayer body with a plurality of insulating films and electrode films alternately stacked therein; a plurality of select gate electrodes provided on the multilayer body, extending in one direction orthogonal to a stacking direction of the multilayer body, and spaced from each other; semiconductor pillars penetrating through the multilayer body and the select gate electrodes; and a charge storage film provided between one of the electrode films and one of the semiconductor pillars, two neighboring ones of the semiconductor pillars penetrating through a common one of the select gate electrodes and penetrating through mutually different positions in a width direction of the select gate electrodes. | 09-23-2010 |
Makoto Aoyama, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090111688 | Exhaust Gas Purifying Catalyst and Production Method Thereof - An object is to maintain an effect of enhancing activity of noble metal particles by transition metal without increasing production cost and an environmental load. | 04-30-2009 |
| 20090239739 | CATALYST, EXHAUST GAS PURIFYING CATALYST, AND METHOD OF PRODUCING THE CATALYST - A catalyst | 09-24-2009 |
Naoki Aoyama, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090318657 | Sealing gasket for closure and process for production of closure using the same - A sealing gasket for closure, made of a polyurethane elastomer obtained by reacting the following (A), (B) and (C): | 12-24-2009 |
Nozomu Aoyama, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090276759 | TESTING INTERNATIONALIZED SOFTWARE USING TEST RESOURCE FILE AND TEST FONT - An efficient testing method is provided for internationalized software executed in a plurality of language environments. The method includes mock-translating an externalized resource file written in a first language of the internationalized software by converting characters of the first language to characters of a second language based on a conversion table; and displaying output information from the internationalized software that performs processing by referring to the mock-translated test resource file using one of a plurality of fonts prepared for respective test categories. | 11-05-2009 |
| 20100095157 | PROBLEM ANALYSIS VIA MATCHING CONTIGUOUS STACK TRACE LINES TO SYMPTOM RULES - A method and system for analyzing a problem in a computing environment. Symptom rules that include associated problem information are generated in a symptom catalog. An input file including a stack trace provided in response to detecting the problem is received. Function names included in contiguous lines in the stack trace are identified. In response to a search for the function names in the symptom catalog, the function names found in the search are matched to keywords included in a symptom rule. The computing system retrieves problem information that corresponds to the matched keywords. A report is generated that includes the stack trace and a solution included in the retrieved problem information. The generated report uses a text attribute to emphasize the text of the function names included in the stack trace. | 04-15-2010 |
Tomonori Aoyama, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100133623 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A silicon oxynitride film is formed on entire surface of a semiconductor substrate, a lanthanum oxide film is formed on the silicon oxynitride film and the lanthanum oxide film is removed from a pMOS region. Then, a nitrided hafnium silicate film serving as a highly dielectric film is formed on the entire surface, an aluminum-containing titanium nitride film is formed, a polysilicon film is formed, and the stacked films are patterned into a gate electrode configuration. Next, impurities are introduced into a source/drain region, and an annealing for activating the impurities is utilized to diffuse the aluminum included in the aluminum-containing titanium nitride film to the interface between the silicon oxynitride film and the nitrided hafnium aluminum silicate film in the pMOS region. | 06-03-2010 |
| 20110008952 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, in a method for manufacturing a semiconductor device, a surface region of a semiconductor substrate is modified into an amorphous layer. A microwave is irradiated to the semiconductor substrate in which the amorphous layer is formed in a dopant-containing gas atmosphere so as to form a diffusion layer in the semiconductor substrate. The dopant is diffused into the amorphous layer and is activated. | 01-13-2011 |
| 20110076842 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - An ion implantation is performed to implant ions into a silicon substrate, and a microwave irradiation is performed to irradiate the silicon substrate with microwaves after the ion implantation. After the microwave irradiation, the silicon substrate is transferred to a heat-treatment apparatus, where the silicon substrate is treated with heat by being irradiated with light having a pulse width ranging from 0.1 milliseconds to 100 milliseconds, both inclusive. | 03-31-2011 |
| 20110111580 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method can include forming an amorphous layer on a portion of a first silicon substrate having a first plane orientation, and irradiating with micro wave on the amorphous layer to transform from the amorphous layer into a crystalline layer having the first plane orientation. | 05-12-2011 |