Patent application number | Description | Published |
20090159854 | SUPPRESSION OF NON-RADIATIVE RECOMBINATION IN MATERIALS WITH DEEP CENTRES - Procedure to obtain semiconductor materials with electronic levels close to the mid-bandgap (deep levels) which do not suffer from the non-radiative recombination by multiple phonon emission (MPE) associated to the existence of that kind of levels. The procedure consist in doping by any means the semiconductor with a density sufficiently high of the impurities producing the deep level, so that a Mott transition of the electron wavefunctions representing the localized states in the impurities is induced, in such a way that these wavefunctions become distributed across the whole semiconductor and are shared by all the impurities. When this happens, local charge density variations, and thus non-radiative recombination by MPE, disappear. Based on the resulting materials (semiconductors with three separate energy bands and radiative behavior ( | 06-25-2009 |
20100294334 | QUANTUM DOT INTERMEDIATE BAND SOLAR CELL WITH OPTIMAL LIGHT COUPLING BY DIFRACTION - It consists of a quantum dot intermediate band solar cell with light coupling by diffraction. In the structure of the cell, the rear metalic contact ( | 11-25-2010 |
20110100797 | PROCEDURE FOR OBTAINING FILMS OF INTERMEDIATE BAND SEMICONDUCTOR MATERIALS - This invention describe a process for obtaining thin films of intermediate band semiconductor materials consisting of obtaining a target of compressed particles of the said material for its use in sputtering equipment. The target is obtained by means of the thermal process of a mixture of semiconductor material components, following a specific profile of temperatures and times, in order to obtain a material in a polycrystalline form of the same composition as the intermediate band semiconductor material. The polycrystalline material is disintegrated again by means of mechanical processes in the form of a powder and is then compacted, through the application of a suitable pressure in order to form a target. | 05-05-2011 |
20110143475 | METHOD FOR MANUFACTURING OF OPTOELECTRONIC DEVICES BASED ON THIN-FILM, INTERMEDIATE-BAND MATERIALS DESCRIPTION - Method for manufacturing of optoelectronic devices based on thin-film, intermediate band materials, characterized in that it comprises, at least, the following steps: | 06-16-2011 |
20130092221 | INTERMEDIATE BAND SOLAR CELL HAVING SOLUTION-PROCESSED COLLOIDAL QUANTUM DOTS AND METAL NANOPARTICLES - The present invention relates to a solar cell and to a method of manufacturing thereof, the solar cell comprising: a layer of an n-doped semiconductor, a layer of a p-doped semiconductor and an intermediate band layer being disposed between the n-doped and the p-doped semiconductor layers, the intermediate band layer comprising: an amorphous semiconducting host material, a plurality of colloidal quantum dots embedded in the host material and substantially uniformly distributed therein, each quantum dot comprising a core surrounded by a shell, the shell comprising a material having a higher bandgap than that of the host material, and a plurality of metal nanoparticles embedded in the host material and located at least in a plane where a plurality of quantum dots are distributed. | 04-18-2013 |
20140326299 | SOLAR CELL WITH AN INTERMEDIATE BAND COMPRISING NON-STRESSED QUANTUM DOTS - An intermediate band solar cell is provided. The intermediate band material of the intermediate band solar cell consists of a collection of quantum dots of a semiconductor material that are immersed in a volume of a second semiconductor material. The first semiconductor material has a rock salt-type crystalline structure, and the second semiconductor material has a zinc blende structure. The quantum dots are produced by the immiscibility of the first semiconductor material in the second semiconductor material. A combination of the first and second semiconductor materials with a very similar lattice constant can therefore be selected such that the layer of intermediate band material does not have mechanical stress accumulation. | 11-06-2014 |
20150090320 | SOLAR CELL - A solar cell comprises a three layer semiconductor structure wherein the top ( | 04-02-2015 |