| Patent application number | Description | Published |
|---|
| 20080224127 | Gate dielectric structures, organic semiconductors, thin film transistors and related methods - Gate dielectric structures comprising an organic polymeric component, and organic semiconductor components, as can be used to fabricate thin film transistor devices. | 09-18-2008 |
| 20080249309 | Organic semiconductor materials and precursors thereof - The present teachings provide novel organic semiconductor compounds and their soluble precursors, methods for preparing these compounds and precursors, as well as compositions, materials, articles, structures, and devices that incorporate such compounds. | 10-09-2008 |
| 20080293937 | n-Type Thiophene Semiconductors - The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm | 11-27-2008 |
| 20090036643 | Conjugated monomers and polymers and preparation and use thereof - Disclosed are new conjugated compounds (e.g., monomers and polymers) that include ladder-type moieties which can be used for preparing semiconducting materials. Such conjugated compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. Compounds of the present teachings also can exhibit ambipolar semiconducting activity. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability in ambient conditions. | 02-05-2009 |
| 20090050876 | Transparent Nanowire Transistors and Methods for Fabricating Same - Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible. | 02-26-2009 |
| 20090206341 | Solution-processed high mobility inorganic thin-film transistors - Fluid media comprising inorganic semiconductor components for fabrication of thin film transistor devices. | 08-20-2009 |
| 20090267061 | Carbonyl-Functionalized Thiophene Compounds and Related Device Structures - Carbonyl-functionalized oligo/polythiophene compounds, and related semiconductor components and related device structures. | 10-29-2009 |
| 20100019237 | Siloxane-Polymer Dielectric Compositions and Related Organic Field-Effect Transistors - Dielectric compositions comprising siloxane and polymeric components, as can be used in a range of transistor and related device configurations. | 01-28-2010 |
| 20100024883 | Silole-Based Polymers and Semiconductor Materials Prepared from the Same - The present teachings provide silole-based polymers that can be used as p-type semiconductors. More specifically, the present teachings provide polymers that include a repeating unit of Formula I: | 02-04-2010 |
| 20100038630 | Semiconducting siloxane compositions for thin film transistor devices,and making and using the same - Semiconducting siloxane compositions and methods for manufacturing and use thereof in preparing organic thin-film transistors (OTFTs) are described. The semiconducting siloxane compositions can be crosslinked products of polymeric/monomeric compositions that include silane-derivatized crosslinkable organic p-type compounds and p-type semiconducting polymers. | 02-18-2010 |
| 20100173165 | Intercalated Superlattice Compositions and Related Methods for Modulating Dielectric Property - Compositions, methods of using inorganic moieties for dielectric modulation, and related device structures. | 07-08-2010 |
| 20100204475 | N-Type Semiconductors and Related Devices - Mono- and diimide perylene and naphthalene compounds, N- and/or core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures. | 08-12-2010 |
| 20100283047 | PERYLENE-IMIDE SEMICONDUCTOR POLYMERS - Disclosed are new semiconductor materials prepared from perylene-imide copolymers. Such polymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions. | 11-11-2010 |
| 20100307594 | Conjugated Polymers and Their Use in Optoelectronic Devices - Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes. | 12-09-2010 |
| 20100319778 | PERYLENE SEMICONDUCTORS AND METHODS OF PREPARATION AND USE THEREOF - The present teachings provide semiconducting compounds, materials prepared from such compounds, methods of preparing such compounds and semiconductor materials, as well as various compositions, composites, and devices that incorporate the compounds and semiconductor materials. Specifically, compounds of the present teachings can have higher electron-transport efficiency and higher solubility in common solvents compared to related representative compounds. | 12-23-2010 |
| 20100326527 | NAPHTALENE-IMIDE SEMICONDUCTOR POLYMERS - Disclosed are new semiconductor materials prepared from naphthalene-imide copolymers. Such polymers can exhibit desirable electronic properties and can possess processing advantages including solution-processability and/or good stability at ambient conditions. | 12-30-2010 |
| 20110024729 | Crosslinked Polymeric Dielectric Materials And Electronic Devices Incorporating Same - Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided. | 02-03-2011 |
| 20110118483 | n-Type thiophene semiconductors - The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm | 05-19-2011 |
| 20110120558 | SEMICONDUCTOR MATERIALS PREPARED FROM RYLENE-(PI-ACCEPTOR)COPOLYMERS - Disclosed are new semiconductor materials prepared from rylene-(π-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions. | 05-26-2011 |
| 20110136333 | SEMICONDUCTOR MATERIALS AND METHODS OF PREPARATION AND USE THEREOF - Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions. | 06-09-2011 |
| 20110155247 | Organic Semiconductors and Devices Incorporating Same - Disclosed are thionated fused-ring (aromatic) imides and diimides that can exhibit desirable electronic properties and can possess processing advantages including solution-processability and/or good stability at ambient conditions. | 06-30-2011 |
