| Patent application number | Description | Published |
|---|
| 20080239277 | Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method - The present invention provides a method for forming a substrate for use in calibrating a metrology tool in order to compensate for orientation-dependent variations within the metrology tool. | 10-02-2008 |
| 20080311344 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method - An overlay target on a substrate is disclosed, the overlay target including a periodic array of structures wherein every n | 12-18-2008 |
| 20090135424 | Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method for Determining A Parameter of a Target Pattern - In a method for determining a structure parameter of a target pattern, a first series of calibration spectra are determined from at least one reference pattern, each spectra being determined using a different known value of at least one structure parameter of the respective reference pattern. The first series of calibration spectra does not take into account parameters of an apparatus used to produce the reference pattern. A representation of each of the first series calibration spectra is stored in a central library. A second series of calibration spectra corresponding to at least one of the stored spectra for a target spectrum is determined using the parameters of the apparatus for measuring the target spectrum. A measured target spectrum is produced by directing a beam of radiation onto the target pattern. The measured target spectrum and the second series of calibration spectra are compared, where this comparison is used to derive a value for the structure parameter of the target pattern. | 05-28-2009 |
| 20090237676 | Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method - A method is provided for determining an actual profile of an object printed on a substrate. The method can include receiving an actual spectrum signal associated with the object, selecting a first model profile, and generating a first model spectrum signal associated with the first model profile. The method can further include comparing the first model spectrum signal with the actual spectrum signal. If the first model spectrum signal and the actual spectrum signal do not match a desired tolerance, the aforementioned selecting, generating, and comparing can be repeated with a second model profile. The second model profile can be selected based on the first model spectrum signal having undergone an optimization process based on a number of variable parameters of the first model profile, where the number of variable parameters is reduced by approximating the first model profile to a single shape with a reduced number of variable parameters. | 09-24-2009 |
| 20100201963 | Inspection Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Inspection Method - For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren't illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants. | 08-12-2010 |
| 20100227280 | Method of Measuring a Characteristic - During a multiple patterning process every n | 09-09-2010 |
| 20110007314 | Method and apparatus for angular-resolved spectroscopic lithography characterization - An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference. | 01-13-2011 |
| 20110141444 | Inspection Apparatus for Lithography - A scatterometer configured to measure a property of a substrate, includes a radiation source configured to provide a radiation beam; and a detector configured to detect a spectrum of the radiation beam reflected from a target ( | 06-16-2011 |
