Patent application number | Description | Published |
20100087062 | HIGH TEMPERATURE BD DEVELOPMENT FOR MEMORY APPLICATIONS - A method and apparatus for depositing organosilicate dielectric layers having good adhesion properties and low dielectric constant. Embodiments are described in which layers are deposited at low temperature and at high temperature. The low temperature layers are generally post-treated, whereas the high temperature layers need no post treating. Adhesion of the layers is promoted by use of an initiation layer. | 04-08-2010 |
20110230008 | Method and Apparatus for Silicon Film Deposition - Embodiments of the present invention are directed to apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells. Specifically, embodiments of the invention provide for a pre-heated hydrogen-containing gas to be introduced into a processing chamber separately from the silicon-containing gas. A plasma, struck from the heated hydrogen-containing gas, reacts with the silicon-containing gas to produce a silicon film on a substrate. | 09-22-2011 |
20120122320 | Method Of Processing Low K Dielectric Films - Provided are methods for re-incorporating carbon into low-k films after processes which result in depletion of carbon from the films. Additionally, methods for replenished depleted carbon and capping with tantalum nitride are also described. | 05-17-2012 |
20120295419 | METHODS FOR DEPOSITING A MATERIAL ATOP A SUBSTRATE - Methods for depositing a material atop a substrate are provided herein. In some embodiments, a method of depositing a material atop a substrate may include exposing a substrate to a silicon containing gas and a reducing gas; increasing a flow rate of the silicon containing gas while decreasing a flow rate of the reducing gas to form a first layer; and depositing a second layer atop the first layer. | 11-22-2012 |
20130140698 | Doped Tantalum Nitride for Copper Barrier Applications - Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer. | 06-06-2013 |
20130196507 | Method Of Depositing Metals Using High Frequency Plasma - Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma. | 08-01-2013 |
20130230986 | ADHESION IMPROVEMENT FOR LOW K DIELECTRICS TO CONDUCTIVE MATERIALS - Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive material disposed thereon, introducing a reducing compound or a silicon based compound, exposing the conductive material to the reducing compound or the silicon based compound, and depositing a silicon carbide layer without breaking vacuum. | 09-05-2013 |
20130292806 | Methods For Manganese Nitride Integration - Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer. | 11-07-2013 |
20140220772 | Doping Control of Metal Nitride Films - Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping. | 08-07-2014 |