| Patent application number | Description | Published |
|---|
| 20080241991 | GANG FLIPPING FOR FLIP-CHIP PACKAGING - An improved method and apparatus for packaging integrated circuits are described. More particularly, a method and apparatus for use in securing a plurality of integrated circuit dice to a lead frame panel are described. Each integrated circuit die includes an active surface having a multiplicity of solder bumps. The lead frame panel includes an array of device areas, each including a plurality of leads. The method includes positioning a plurality of dice into designated positions on a carrier such that the active surfaces of the dice are facing upwards. The carrier includes a carrier frame including an associated array of carrier device areas. A lead frame panel may be positioned over the carrier such that the solder bumps on the active surfaces of the dice are adjacent and in contact with the associated leads of the associated device areas. | 10-02-2008 |
| 20080241993 | GANG FLIPPING FOR IC PACKAGING - A method of handling an IC wafer that includes a multiplicity of dice is described. Solder bumps are formed on bond pads on the active surface of the wafer. The back surface of the bumped wafer is adhered to a first mount tape. The wafer is singulated while it is still secured to the first tape to provide a multiplicity of individual dice. The active surfaces of the singulated dice are then adhered to a second tape with the first tape still adhered to the back surfaces of the dice. The first tape may then be removed. In this manner, the back surfaces of the dice may be left exposed and facing upwards with the active surfaces of the dice adhered to the second tape. The described method permits the use of a conventional die attach machine that is not designated for use as a flip-chip die attach machine. | 10-02-2008 |
| 20090026621 | Bond pad stacks for ESD under pad and active under pad bonding - A combination of layout improvements and inner layer dielectric (ILD) material improvements provides a bond pad stack that is robust for both gold (Au) and copper (Cu) wires in circuits with only one or two pad metal layers. The layout improvements involve removing all vias between the top metal layer and the metal layers below top metal in the area under the passivation opening (where probe tips and the bond wire are placed). This allows for a more homogenous material without via discontinuities, thereby reducing stress concentration points in the ILD. The ILD material improvement involves adding a layer of silicon nitride in addition to the silicon oxide layer. Traditionally, the ILD consists of either spun-on or high density plasma (HDP) oxides. The growth of the thin layer of silicon nitride over the oxide on the topmost ILD layer provides a composite of significantly increased toughness and prevents cracks or other damage from propagating into the underlying active circuits and routing. | 01-29-2009 |
| 20090072367 | LEADFRAME - Particular embodiments of the present invention provide a leadframe suitable for use in packaging IC dice that enables stress reduction in and around the die, die attach material, die attach pad and mold interfaces. More particularly, various leadframes are described that include recesses in selected regions of the top surface of the die attach pad. | 03-19-2009 |
| 20090115035 | INTEGRATED CIRCUIT PACKAGE - Integrated circuit (IC) packages are described. Each IC package includes a die having an exposed metallic layer deposited on its back surface. Solder joints are arranged to physically and electrically connect I/O pads on the active surface of the die with associated leads. A molding material encapsulates portions of the die, leadframe and solder joint connections while leaving the metallic layer exposed and uncovered by molding material. | 05-07-2009 |
| 20090160037 | METHOD OF PACKAGING INTEGRATED CIRCUITS - A method of packaging an integrated circuit die having a plurality of I/O pads is described. The method includes positioning the die within a die attach area of a first leadframe that includes a plurality of first leads. The method also includes positioning a second leadframe that includes a plurality of second leads over the first leadframe. The method further includes electrically connecting each of the second leads to both an associated I/O pad and a first lead. | 06-25-2009 |
| 20090174069 | I/O PAD STRUCTURE FOR ENHANCING SOLDER JOINT RELIABILITY IN INTEGRATED CIRCUIT DEVICES - A semiconductor device is described. The device includes an integrated circuit die having an active surface that includes a plurality of input/output (I/O) pads. The device further includes a plurality of crack resistant structures. Each crack resistant structure is formed over an associated I/O pad and includes an associated raised portion. Each I/O pad may be bumped with solder such that a solder bump is formed over the associated crack resistant structure on the I/O pad. | 07-09-2009 |
| 20090267216 | INKJET PRINTED LEADFRAMES - Apparatuses and methods for inkjet printing electrical interconnect patterns such as leadframes for integrated circuit devices are disclosed. An apparatus for packaging includes a thin substrate adapted for high temperature processing, and an attach pad and contact regions that are inkjet printed to the thin substrate using a metallic nanoink. The nanoink is then cured to remove liquid content. The residual metallic leadframe or electrical interconnect pattern has a substantially consistent thickness of about 10 to 50 microns or less. An associated panel assembly includes a conductive substrate panel having multiple separate device arrays comprising numerous electrical interconnect patterns each, a plurality of integrated circuit devices mounted on the conductive substrate panel, and a molded cap that encapsulates the integrated circuit devices and associated electrical interconnect patterns. The molded cap is of substantially uniform thickness over each separate device array, and extends into the space between separate device arrays. | 10-29-2009 |
| 20100015329 | METHODS AND SYSTEMS FOR PACKAGING INTEGRATED CIRCUITS WITH THIN METAL CONTACTS - Methods and arrangements are described for forming an array of contacts for use in packaging one or more integrated circuit devices. In particular, various methods are described for forming contacts having thicknesses less than approximately 10 μm, and in particular embodiments, between 0.5 to 2 μm. | 01-21-2010 |
| 20100025818 | INTEGRATED CIRCUIT PACKAGE - An integrated circuit package is described that includes an integrated circuit die, a plurality of lower contact leads, and an insulating substrate positioned over the die and lower contact leads. The insulating substrate includes a plurality of electrically conducting upper routing traces formed on the bottom surface of the substrate. The traces on the bottom surface of the substrate electrically couple each lower contact lead with an associated I/O pad. | 02-04-2010 |
| 20100072613 | INKJET PRINTED LEADFRAME - Apparatuses and methods for inkjet printing electrical interconnect patterns such as leadframes for integrated circuit devices are disclosed. An apparatus for packaging includes a thin substrate adapted for high temperature processing, and an attach pad and contact regions that are inkjet printed to the thin substrate using a metallic nanoink. The nanoink is then cured to remove liquid content. The residual metallic leadframe or electrical interconnect pattern has a substantially consistent thickness of about 10 to 50 microns or less. An associated panel assembly includes a conductive substrate panel having multiple separate device arrays comprising numerous electrical interconnect patterns each, a plurality of integrated circuit devices mounted on the conductive substrate panel, and a molded cap that encapsulates the integrated circuit devices and associated electrical interconnect patterns. The molded cap is of substantially uniform thickness over each separate device array, and extends into the space between separate device arrays. | 03-25-2010 |
| 20100084748 | THIN FOIL FOR USE IN PACKAGING INTEGRATED CIRCUITS - Methods for minimizing warpage of a welded foil carrier structure used in the packaging of integrated circuits are described. Portions of a metallic foil are ultrasonically welded to a carrier to form a foil carrier structure. The ultrasonic welding helps define a panel in the metallic foil that is suitable for packaging integrated circuits. Warpage of the thin foil can be limited in various ways. By way of example, an intermittent welding pattern that extends along the edges of the panel may be formed. Slots may be cut to define sections in the foil carrier structure. Materials for the metallic foil and the carrier may be selected to have similar coefficients of thermal expansion. An appropriate thickness for the metallic foil and the carrier may be selected, such that the warpage of the welded foil carrier structure is limited when the foil carrier structure is subjected to large increases in temperature. Foil carrier structures for use in the above methods are also described. | 04-08-2010 |
| 20100151614 | WAFER LEVEL METHOD OF FORMING SIDE FIBER INSERTION OPTOELECTRONIC PACKAGES - Optoelectronic packages and wafer level techniques for forming optoelectronic packages are described. In accordance with one apparatus aspect of the invention, a pair of substrates are bonded together to form an optical coupler. A first one of the substrates has a recess that faces the second substrate to at least in part define a channel suitable for receiving an optical transmission medium. A photonic device is mounted on a mounting surface of the second substrate that is opposite its bonded surface. The photonic device faces the reflective surface and an optical path is formed between the channel and the photonic element that both reflects off of the reflective surface and passes through the second substrate. In some embodiments an integrated circuit device and/or solder bumps are also attached to the mounting surface and the second substrate has conductive traces thereon that electrically couple the various electrical components as appropriate (e.g., the photonic device, the integrated circuit device, the solder bumps and/or other components). The substrates may be formed from a wide variety of materials including, glass, plastic and silicon. In some embodiments, at least the second substrate is formed from an optically transparent material and the optical path passes directly though the optically transparent material. In a method aspect of the invention, a variety of wafer level methods for forming such devices are described. | 06-17-2010 |
| 20110074003 | FOIL BASED SEMICONDUCTOR PACKAGE - The present inventions relate to methods and arrangements for using a thin foil to form electrical interconnects in an integrated circuit package. One embodiment of the present invention involves attaching multiple dice to a foil carrier structure. The foil carrier structure is made of a thin foil that is bonded to a carrier. The dice and at least a portion of the metallic foil is then encapsulated with a molding material. The carrier is removed, leaving behind a molded foil structure. The exposed foil is patterned and etched using photolithographic techniques to define multiple device areas in the foil. Each device area includes multiple conductive lines. Afterwards, portions of the conductive lines are covered with a dielectric material and other portions are left exposed to define multiple bond pads in the device area. The molded foil structure can be singulated to form multiple integrated circuit packages. | 03-31-2011 |
