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Andrei Papou, San Jose US

Andrei Papou, San Jose, CA US

Patent application numberDescriptionPublished
20090038142METHODS OF FORMING INDUCTORS ON INTEGRATED CIRCUITS - The claimed invention pertains to methods of forming one or more inductors on a semiconductor substrate. In one embodiment, a method of forming an array of inductor core elements on a semiconductor substrate that includes integrated circuits is disclosed. A first set of spaced apart metallic core elements are formed over the substrate. Isolation sidewalls are then formed on side surfaces of the core elements. Afterward, a second set of metallic core elements are formed over the substrate. In some embodiments, at least one core element of the second set of core elements is positioned in a space between an associated adjacent pair of core elements from the first set of core elements. The first and second sets of core elements are substantially co-planar and interleaved such that only the isolation sidewalls separate adjacent core elements. Particular embodiments involve other processing operations, such as the forming of a metal seed layer, the deposition and patterning of photoresist, the selective electroplating of different types of metal to form core elements and/or the deposition and etching away of an isolation layer to form isolation sidewalls on the core elements.02-12-2009
20090040000INTEGRATED CIRCUITS WITH INDUCTORS - The claimed invention relates to arrangements of inductors and integrated circuit dice. One embodiment pertains to an integrated circuit die that has an inductor formed thereon. The inductor includes an inductor winding having a winding input and a winding output. The inductor also comprises an inductor core array having at least first and second sets of inductor core elements that are magnetically coupled with the inductor winding. Each inductor core element in the first set of inductor core elements is formed from a first metallic material. Each inductor core element in the second set of inductor core elements is formed from a second metallic material that has a different magnetic coercivity than the first magnetic material. The inductor further comprises a set of spacers that electrically isolate the inductor core elements. Some embodiments involve multiple inductor windings and/or multiple inductor core elements that magnetically interact in various ways. Particular embodiments involve core elements having different compositions and/or sizes.02-12-2009
20090091414On-chip inductor for high current applications - Saturation of nonlinear ferromagnetic core material for on-chip inductors for high current applications is significantly reduced by providing a core design wherein magnetic flux does not form a closed loop, but rather splits into multiple sub-fluxes that are directed to cancel each other. The design enables high on-chip inductance for high current power applications.04-09-2009
20090094818Magnetically enhanced power inductor with self-aligned hard axis magnetic core produced using a damascene process sequence - A damascene process is utilized to fabricate the segmented magnetic core elements of an integrated circuit inductor structure. The magnetic core is electroplated from a seed layer that is conformal with a permanent dielectric mold that results in sidewall plating defining an easy magnetic axis. The hard axis runs parallel to the longitudinal axis of the core and the inductor coils are orthogonal to the core's longitudinal axis. The magnetic field generated by the inductor coils is, therefore, parallel and self-aligned to the hard magnetic axis. The easy axis can be enhanced by electroplating in an applied magnetic field parallel to the easy axis.04-16-2009
20090160592Helical core on-chip power inductor - An on-chip inductor structure includes a conductive inductor coil and a helical ferromagnetic inductor core that is formed to wrap around the conductive coil. The coil is space-apart from the ferromagnetic core by intervening dielectric material. The helical core structure includes at least one magnetic gap lithographically formed in the core.06-25-2009
20100068864APPARATUS AND METHOD FOR WAFER LEVEL FABRICATION OF HIGH VALUE INDUCTORS ON SEMICONDUCTOR INTEGRATED CIRCUITS - Methods for forming multiple inductors on a semiconductor wafer are described. A plating layer and a photoresist layer are applied over a semiconductor wafer. Recess regions are etched in the photoresist layer using photolithographic techniques, which exposes portions of the underlying plating layer. Metal is electroplated into the recess regions in the photoresist layer to form multiple magnetic core inductor members. A dielectric insulating layer is applied over the magnetic core inductor members. Additional plating and photoresist layers are applied over the dielectric insulating layer. Recess regions are formed in the newly applied photoresist layer. Electroplating is used to form inductor windings in the recess regions. Optionally, a magnetic paste can be applied over the inductor coils.03-18-2010
20110025443APPARATUS AND METHOD FOR WAFER LEVEL FABRICATION OF HIGH VALUE INDUCTORS ON SEMICONDUCTOR INTEGRATED CIRCUITS - An apparatus and method for wafer level fabrication of high value inductors directly on top of semiconductor integrated circuits. The apparatus and method includes fabricating a semiconductor wafer including a plurality of dice, each of the dice including power circuitry and a switching node. Once the wafer is fabricated, then a plurality of inductors are fabricated directly onto the plurality of dice on the wafer respectively. Each inductor is fabricated by forming a plurality of magnetic core inductor members on an interconnect dielectric layer formed on the wafer. An insulating layer, and then inductor coils, are then formed over the plurality of magnetic core inductor members over each die. A plated magnetic layer is formed over the plurality of inductors respectively to raise the permeability and inductance of the structure.02-03-2011

Patent applications by Andrei Papou, San Jose, CA US