Patent application number | Description | Published |
20080224159 | Optical Element, Optoelectronic Component Comprising Said Element, and the Production Thereof - The invention relates to an optical element ( | 09-18-2008 |
20080290356 | Reflective Layered System Comprising a Plurality of Layers that are to be Applied to a III/V Compound Semiconductor Material - The invention describes a method for producing a reflective layer system and a reflective layer system for application to a III/V compound semiconductor material, wherein a first layer, containing phosphosilicate glass, is applied directly to the semiconductor substrate Disposed thereon is a second layer, containing silicon nitride. A metallic layer is then applied thereto. | 11-27-2008 |
20090218591 | Method for Connecting Layers, Corresponding Component and Organic Light-Emitting Diode - A method for bonding several layers, which comprise at least one thermally bondable material, by means of a joint layer produced with the aid of thermocompression at least one of the layers comprising a semiconductor material, as well as to a correspondingly manufactured device. Also disclosed is a method for manufacturing an organic light-emitting diode and an organic light-emitting diode that is encapsulated between two cover layers with the aid of thermocompression. | 09-03-2009 |
20090302429 | Electrically Conducting Connection with Insulating Connection Medium - A device comprising a first component ( | 12-10-2009 |
20090311847 | Method for producing a semiconductor component - Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively. | 12-17-2009 |
20130341655 | METHOD FOR PRODUCING AN ELECTRICAL TERMINAL SUPPORT - The invention relates to a method for producing an electrical terminal support for an optoelectronic semiconductor body, comprising the following steps: providing a carrier assembly ( | 12-26-2013 |
20140014977 | OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE - An optoelectronic semiconductor device includes an optoelectronic semiconductor layer sequence on a metal carrier element, which includes as a first component silver and as a second component a material having a lower coefficient of thermal expansion than silver, wherein the first and second components are intermixed in the metal carrier element. | 01-16-2014 |
20140070246 | LIGHT-EMITTING SEMICONDUCTOR COMPONENT - The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body ( | 03-13-2014 |
20140145228 | OPTOELECTRONIC SEMICONDUCTOR CHIP, METHOD OF FABRICATION AND APPLICATION IN AN OPTOELECTRONIC COMPONENT - An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material. | 05-29-2014 |
20150011037 | CONVERTER PLATE, A RADIATION-EMITTING DEVICE HAVING SUCH A CONVERTER PLATE AND A METHOD OF PRODUCING SUCH A CONVERTER PLATE - A converter plate adapted to be attached to a radiation-emitting semiconductor chip, the converter plate containing a base material made of glass in which a plurality of openings is arranged, in each of which a converter material is installed. | 01-08-2015 |
20150041840 | Optoelectronic Semiconductor Component, and Method for the Manufacture of an Optoelectronic Semiconductor Component - In at least one embodiment, the semiconductor component includes a semiconductor layer sequence with an active layer for generating an electromagnetic radiation. The semiconductor component includes a radiation-permeable element and a connecting element. The connecting element is layered in form and connects the radiation-permeable element and the semiconductor layer sequence to another mechanically. The connecting element is designed to be passed through by at least one part of the radiation generated in the active layer. A refractive index of the connecting means deviates from a refractive index of the semiconductor layer sequence by a maximum of 25%. The connecting element includes at least two principal components, which are solids at a temperature of 300 K. At least one of the principal components has a melting temperature of no more than 750 K. | 02-12-2015 |
20150048400 | METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer. | 02-19-2015 |
20150070914 | Optoelectronic Lighting Device and Method for Producing an Optoelectronic Lighting Device - An optoelectronic lighting device includes a lighting module with an optoelectronic semiconductor chip. A connection carrier has a first main surface and a second main surface facing away from the first main surface. The lighting module is arranged on the first main surface of the connection carrier, and the connection carrier adheres to a heat sink on account of a magnetic attraction. | 03-12-2015 |