Patent application number | Description | Published |
20100136718 | METHODS AND APPARATUS FOR ALIGNING A SET OF PATTERNS ON A SILICON SUBSTRATE - A method of aligning a set of patterns on a substrate, the substrate including a substrate surface, is disclosed. The method includes depositing a set of silicon nanoparticles on the substrate surface, the set of nanoparticles including a set of ligand molecules including a set of carbon atoms, wherein a first set of regions is formed where the silicon nanoparticles are deposited and the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of silicon nanoparticles into a thin film wherein a set of silicon-organic zones are formed on the substrate surface, wherein the first set of regions has a first reflectivity value and the second set of regions has a second reflectivity value. The method further includes illuminating the substrate surface with an illumination source, wherein the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1. | 06-03-2010 |
20100136771 | SUB-CRITICAL SHEAR THINNING GROUP IV BASED NANOPARTICLE FLUID - A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles. | 06-03-2010 |
20110012066 | GROUP IV NANOPARTICLE FLUID - A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles-comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles. | 01-20-2011 |
20120083054 | METHODS AND APPARATUS FOR ALIGNING A SET OF PATTERNS ON A SILICON SUBSTRATE - The disclosure relates to a method of aligning a set of patterns on a substrate, which includes depositing on the substrate's surface a set of silicon nanoparticles, which includes a set of ligand molecules including a set of carbon atoms. The method involves forming a first set of regions where the nanoparticles are deposited, while the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of nanoparticles into a thin film to form a set of silicon-organic zones on the substrate's surface, wherein the first and the second set of regions have respectively first and second reflectivity values, such that the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1. | 04-05-2012 |
20130040421 | Method for automatic offset caculation for deposition of an aligned metal pattern onto selective emitter pattern and subsequent monitoring of alignment - A method for calculating an offset value for aligned deposition of a second pattern onto a first pattern, comprising steps of: (a) loading a substrate with the first pattern on a surface of the substrate into a pattern recognition device at an original position inside the pattern recognition device; (b) determining a coordinate of a prescribed point of the first pattern by the pattern recognition device; (c) superimposing the second pattern onto the first pattern on the surface of the substrate; (d) bringing back the substrate with the first pattern and the second pattern into the original position inside the pattern recognition device; (e) determining a coordinate of a prescribed point of the second pattern by the pattern recognition device; wherein the prescribed point of the first pattern corresponds to the prescribed point of the second pattern; and (f) calculating the offset value between the first pattern and the second pattern. | 02-14-2013 |
Patent application number | Description | Published |
20080254601 | METHODS FOR OPTIMIZING THIN FILM FORMATION WITH REACTIVE GASES - A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed. | 10-16-2008 |
20080305619 | METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING - A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness. | 12-11-2008 |
20080308130 | Methods of Processing Nanocrystals, and Compositions, Devices and Systems Including Same - Methods of processing nanocrystals to remove excess free and bound organic material and particularly surfactants used during the synthesis process, and resulting nanocrystal compositions, devices and systems that are physically, electrically and chemically integratable into an end application. | 12-18-2008 |
20100140551 | Nanocrystal doped matrixes - Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells. | 06-10-2010 |
20100275982 | GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM - A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced. | 11-04-2010 |
20120009721 | GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM - A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced. | 01-12-2012 |
20120068118 | NANOCRYSTAL DOPED MATRIXES - Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells. | 03-22-2012 |
Patent application number | Description | Published |
20080241051 | METHODS OF PROCESSING NANOCRYSTALS, AND COMPOSITIONS, DEVICES AND SYSTEMS INCLUDING SAME - Methods of processing nanocrystals to remove excess free and bound organic material and particularly surfactants used during the synthesis process, and resulting nanocrystal compositions, devices and systems that are physically, electrically and chemically integratable into an end application. | 10-02-2008 |
20100139770 | NANOSTRUCTURE AND NANOCOMPOSITE BASED COMPOSITIONS AND PHOTOVOLTAIC DEVICES - Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention. | 06-10-2010 |
20140017396 | COMPOSITIONS AND METHODS FOR MODULATION OF NANOSTRUCTURE ENERGY LEVELS - Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.). | 01-16-2014 |