| Patent application number | Description | Published |
|---|
| 20100019378 | SEMICONDUCTOR MODULE AND A METHOD FOR PRODUCING AN ELECTRONIC CIRCUIT - A semiconductor module has at least one die, made of silicon carbide, in which semiconductor components are patterned. The die includes at least one exposed surface for contacting an external heat sink. | 01-28-2010 |
| 20100060260 | MEASUREMENT SENSOR, METHOD FOR ANALYZING A NONPOLAR LIQUID, METHOD FOR MANUFACTURING A MEASUREMENT SENSOR - A measurement sensor for analyzing a nonpolar liquid contains a field effect transistor that has an exposed gate contact for wetting with the nonpolar liquid, and an electrical shield that surrounds the gate contact and has openings for inflow and outflow of the nonpolar liquid. | 03-11-2010 |
| 20100090255 | Electronic component - An electronic component includes at least one electrode and at least one gas-sensitive region on a substrate. The gas-sensitive region is coated by at least one electrically conductive, gas-sensitive layer, and the electrode contacts the gas-sensitive layer. At least a part of the at least one electrode covers a part of the gas-sensitive region. | 04-15-2010 |
| 20100148222 | GAS SENSOR HAVING A FIELD-EFFECT TRANSISTOR - A gas sensor having a field-effect transistor for detecting gases or gas mixtures is provided. The gas sensor includes a substrate having a source, drain and gate region, a gas-sensitive layer being applied on the gate region. A porous adhesive agent is provided for the adhesion of the gas-sensitive layer in the gate region. | 06-17-2010 |
| 20110107817 | PARTICLE SENSOR - A particle sensor including a diaphragm, a diaphragm heater, and at least two measuring electrodes situated on the diaphragm, for electrical conductivity measurement, the diaphragm having a thickness of less than or equal to 50 μm, in order to allow a calorimetric particle quantity determination. | 05-12-2011 |
| 20110180810 | Semiconductor Arrangement and Method for Producing a Semiconductor Arrangement - A semiconductor arrangement includes a ceramic mount and at least one semiconductor component fixed-to the ceramic mount. The ceramic mount includes a first section, and the first section is electrically conductive. | 07-28-2011 |
| 20110198674 | GAS-SENSITIVE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING A GAS-SENSITIVE FIELD EFFECT TRANSISTOR - A gas-sensitive field effect transistor is described which includes a semiconductor substrate having a main substrate surface. The semiconductor substrate has a source region, a gate region, and a drain region. The field effect transistor also includes an insulating layer which has a first main surface facing the main substrate surface, and a second main surface facing away from the main substrate surface. The insulating layer at least partially covers the main substrate surface, and in the area of the gate region has an opening or a region having reduced layer thickness having beveled side walls. An area of the opening in the second main surface is larger than an area of the opening in the first main surface. Lastly, the field effect transistor includes a gate electrode layer which covers at least a partial region of the first main surface of the insulating layer, a region of the beveled side walls of the opening, and an area of the gate region. The gate electrode layer includes a material or a structuring which causes a change in the electrical properties of the gate electrode layer upon contact with a predefined gas. | 08-18-2011 |
| 20110266681 | ELECTRONIC COMPONENT AS WELL AS METHOD FOR ITS PRODUCTION - An electronic component includes at least one patterned layer of an electrically conductive material on a substrate, a protective layer of a second material being deposited on the patterned layer of the electrically conductive material. The second material is baser than the electrically conductive material of the patterned layer. In a method for producing the electronic component, the patterned layer of the electrically conductive material is deposited on the substrate in a first step, and the protective layer of the second material, which is baser than the electrically conductive material of the patterned layer, is deposited on the patterned layer in a second step. | 11-03-2011 |
