Patent application number | Description | Published |
20110278641 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant. | 11-17-2011 |
20120161103 | ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP - An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm. | 06-28-2012 |
20130168720 | Optoelectronic Device - An optoelectronic component includes at least one radiation-emitting semiconductor element. At least one converter element is used to convert the electromagnetic radiation emitted by the semiconductor element. At least one filter element, which includes filter particles or is formed by the same, scatters and/or absorbs at least one pre-definable wavelength range of the electromagnetic radiation emitted by the semiconductor element more strongly than a wavelength range that is different from the predefined wavelength range. The filter particles have a d50 value, measured in Q0, of at least 0.5 nm to no more than 500 nm and/or the filter particles are designed at least in some areas in a thread-like manner and in a thread-like region have a diameter that is at least 0.5 nm and no more than 500 nm. | 07-04-2013 |
20130293097 | LIGHTING DEVICE WITH LED CHIP AND PROTECTIVE CAST - The lighting device has at least one LED chip that is potted by means of a potting compound, which potting compound has a light-transmissive, castable and curable matrix material comprising scattering volumes as filler material, wherein the scattering volumes are distributed inhomogeneously over a thickness of the potting compound and these scattering volumes have a lower density than the matrix material in its castable state. A method is used for producing a lighting device, which comprises at least one LED chip, by means of at least the following steps: potting the at least one LED chip by means of a potting compound containing scattering volumes, wherein the scattering volumes have a lower density than a matrix material of the potting compound in this state; curing the potting compound so that an inhomogeneous distribution of the scattering volumes is obtained owing to floating of the scattering volumes in the matrix material. | 11-07-2013 |
20140057417 | Method for Producing an Optoelectronic Semiconductor Chip - A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner. | 02-27-2014 |
20140061694 | Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body - A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body. | 03-06-2014 |
20140117994 | CALIBRATING A LIGHTING DEVICE COMPRISING A SEMICONDUCTOR LIGHT SOURCE - In various embodiments, a method for calibrating a lighting device is provided. The lighting device may include at least one semiconductor light source. The method may include: determining a thermal power loss of the at least one semiconductor light source; determining an electrical power of the at least one semiconductor light source; and determining a light power of the at least one semiconductor light source from the electrical power and the thermal power loss. | 05-01-2014 |
20140132163 | HIGH-VOLTAGE LED MULTICHIP MODULE AND METHOD FOR ADJUSTING AN LED MULTICHIP MODULE - An LED multichip module may include a plurality of LED chips, which have electrical terminals and are connected in series via electrical connections, and have a designated operating voltage, wherein at least one short-circuiting connection is provided, which connects two of the terminals or connections electrically conductively to one another, and the short-circuiting connection bypasses at least one of the LED chips or a resistor, with the result that the operating voltage is in the range of between 150 V and 350 V. | 05-15-2014 |
20140133148 | LIGHTING DEVICE - A lighting device may include: a carrier having a mounting surface, at least one luminescence diode chip having, at its side facing away from the carrier, a radiation exit surface, through which electromagnetic radiation generated in the luminescence diode chip during operation emerges at least partly, at least one optical body designed in a radiation-transmissive fashion, and a shaped body including a phosphor, wherein each luminescence diode chip is fixed to the mounting surface on the carrier, each optical body is fixed to the radiation exit surface of an assigned luminescence diode chip, the shaped body encloses each optical body in a positively locking manner at a side surface of the optical body, and the phosphor converts at least part of the electromagnetic radiation generated in at least one of the luminescence diode chips during operation. | 05-15-2014 |
20140190732 | Carrier Device, Electrical Device Having a Carrier Device and Method for Producing Same - A carrier device for an electrical component includes a carrier, which includes an electrically insulating layer, and an electrical contact layer on the electrically insulating layer The electrical contact layer includes at least one bridge-shaped contact region At least one recess in the electrically insulating layer is arranged at least on one side surface of the bridge-shaped contact region and/or the bridge-shaped contact region includes a bridge width reducing toward the insulating layer. | 07-10-2014 |
20140367708 | LIGHT-EMITTING DIODE ARRANGEMENT - A light-emitting diode arrangement may include a first layer structure including at least one epitaxially formed light-emitting diode, and at least one second layer structure including at least one epitaxially formed light-emitting diode, wherein the at least one second layer structure is arranged on the first layer structure, and wherein contact faces of the at least one epitaxially formed light-emitting diode in the respective layer structure face contact faces of the at least one epitaxially formed light-emitting diode of the layer structure arranged directly therebelow or thereabove. | 12-18-2014 |
20150014711 | OPTOELECTRONIC COMPONENT WITH INERT GAS ATMOSPHERE - Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas. | 01-15-2015 |