Patent application number | Description | Published |
20090153268 | THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS - A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer ( | 06-18-2009 |
20100244988 | DEVICE WITH AN ELECTROACOUSTIC BALUN - A device has an electroacoustic interface between interfaces for balanced electrical signals and unbalanced electrical signals (i.e. a balun) includes a film of piezoelectric material having a first and second pair of electrodes on a first surface a common electrode, with at least partial overlaps with all of the electrodes of the first and second pair, on a second surface. The interfaces between the electrodes in the first and second pair have geometrically identical shapes. Piezoelectrically polarized regions are provided in the film at the overlaps of the electrodes with the electrode arrangement. The direction of polarization components of the regions in the overlaps with the first electrode and the second electrode in the first pair are equal to each other. To provide for balun coupling, the directions of the polarization components in the overlaps with the first electrode and the second electrode in the second pair are mutually opposite. | 09-30-2010 |
20110285395 | MAGNETIC FIELD SENSOR - An AMR sensor, comprises at least first and second AMR sensor elements to which opposite bias fields are applied. The first and second AMR sensor element outputs are combined to derive a sensor response which is substantially anti-symmetric in the region close to zero external magnetic field. This arrangement shifts the zero detection point of the AMR sensor elements away from a maximum of the response curve, so that sensitivity in proximity to a zero input field is obtained. To overcome the problem that the response is not anti-symmetric, the signals from (at least) two sensor elements are combined. | 11-24-2011 |
20110315654 | METHOD OF MANUFACTURING A BULK ACOUSTIC WAVE DEVICE - A method of manufacturing a Bulk Acoustic Wave device by providing an active layer formed of an electro-mechanical transducer material, providing a first electrode on the active layer, defining a first electrode portion of the device, whereby a remaining portion of the device is defined around the first electrode, providing a stop-layer on the first electrode, depositing a first dielectric layer on the resultant structure, and planarizing the first dielectric layer until the stop-layer on the first electrode is exposed. | 12-29-2011 |
20120025819 | MAGNETORESISTIVE SENSOR - A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element. | 02-02-2012 |
20120099753 | Backplate for Microphone - A microphone has a membrane ( | 04-26-2012 |
20120249265 | Resonator and Method of Controlling the Same - A resonator comprising a resonator body and actuation electrodes for driving the resonator into a resonant mode, in which the resonator body vibrates parallel to a first axis. The resonator comprises means to apply a voltage to the resonator in a direction perpendicular to the first axis direction. This serves to shift the frequency of resonant modes other than the principal resonant mode, and this allows increased amplitude of output signal from the resonator. | 10-04-2012 |
20130320400 | HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed. | 12-05-2013 |
20140176246 | RESONATOR - A resonator has a main resonator body and a secondary resonator structure. The resonator body has a desired mode of vibration of the resonator alone, and a parasitic mode of vibration, wherein the parasitic mode comprises vibration of the resonator body and the secondary resonator structure as a composite body. In this way, unwanted vibrational modes are quenched by the second suspended body. | 06-26-2014 |