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Andrea Lux, Dresden DE

Andrea Lux, Dresden DE

Patent application numberDescriptionPublished
20080227979Pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, a method for the production thereof and doped organic semiconductor material containing these - The present invention relates to pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, methods for their production and doped organic semiconductor material which use such quinazolines.09-18-2008
20080265216OXOCARBON-, PSEUDOOXOCARBON- AND RADIALENE COMPOUNDS AND THEIR USE - The present invention relates to oxocarbon-, pseudooxocarbon- and radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.10-30-2008
20090001327Doped Organic Semiconductor Material - The present invention relates to a doped organic semiconductor material comprising at least one organic matrix material, which is doped with at least one dopant, the matrix material being selected from a group consisting of certain phenanthroline derivatives; and also an organic light-emitting diode which comprises such a semiconductor material.01-01-2009
20090212280Use of a Metal Complex as an N-Dopant for an Organic Semiconducting Matrix Material, Organic of Semiconducting Material and Electronic Component, and also a Dopant and Ligand and Process for Producing same - A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a π complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.08-27-2009
20100102709RADIALENE COMPOUNDS AND THEIR USE - The present invention relates to radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.04-29-2010
20100187515Use of a Precursor of an N-Dopant for Doping an Organic Semiconductive Material, Precursor and Electronic or Optoelectronic Component - Use of a precursor of an n-dopant for doping an organic semiconductive material, as a blocking layer, as a charge injection layer, as an electrode material, as a storage material or as a semiconductor material itself in electronic or optoelectronic components, the precursor being selected from the following formulae 1-3c:07-29-2010
20100193774Quinoid Compounds and Their Use in Semiconducting Matrix Materials, Electronic and Optoelectronic Structural Elements - The invention relates to quinoid compounds and their use in semiconductive matrix materials, electronic and optoelectronic structural elements.08-05-2010
20100233844Method for Preparing Doped Organic Semiconductor Materials and Formulation Utilized Therein - The present invention relates to a method for preparing doped organic semiconductor materials09-16-2010
20110046374Pyrido[3,2-h]quinazolines and/or 5,6-dihydro Derivatives Thereof, a Method for the Production Thereof and Doped Organic Semiconductor Material Containing These - The present invention relates to pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, methods for their production and doped organic semiconductor material which use such quinazolines.02-24-2011
20110108772Use of Heterocyclic Radicals for Doping Organic Semiconductors - The present invention relates to the use of heterocyclic radicals or diradicals, their dimers, oligomers, polymers, dispiro compounds and polycycles for use as dopant for doping an organic semiconductive matrix material, where the dopants have a structure based on the following formulae.05-12-2011

Patent applications by Andrea Lux, Dresden DE