| Patent application number | Description | Published |
|---|
| 20080197106 | Method for manufacturing semiconical microneedles and semiconical microneedles manufacturable by this method - A method for manufacturing semiconical microneedles in an Si-semiconductor substrate and a semiconical microneedles manufacturable made by this method. | 08-21-2008 |
| 20080245764 | Method for producing a device including an array of microneedles on a support, and device producible according to this method - A method for producing a device which is suitable for delivering a substance into or through the skin and includes an array of microneedles developed out of an Si semiconductor substrate, the microneedles being affixed on and/or inside a flexible support made from a polymer material. A device producible by this method. | 10-09-2008 |
| 20080265168 | Radiation sensor element, method for producing a radiation sensor element and sensor field - A radiation sensor element and a method for producing it, as well as a sensor field having a plurality of such radiation sensor elements, the radiation sensor element having a substrate and a planar sensor structure disposed above the substrate in a first plane, and a lead structure being disposed in a second plane between the substrate and the sensor structure. | 10-30-2008 |
| 20080296747 | Micromechanical component having thin-layer encapsulation and production method - A micromechanical component having a substrate and having a thin-layer, as well as having a cavity which is bounded by the substrate and the thin-layer, at least one gas having an internal pressure being enclosed in the cavity. The gas phase has a non-atmospheric composition. A method for producing a micromechanical component having a substrate and having a thin-layer encapsulation, as well as having a cavity which is bounded by the substrate and the thin-layer encapsulation. The method has the steps of positioning a polymer in a cavity, closing the cavity and generating a gas phase of non-atmospheric composition in the cavity by decomposing at least a part of the polymer. An internal pressure is generated, which may be higher than the process pressure when the cavity is closed. | 12-04-2008 |
| 20090129440 | Sensor - A sensor, in particular a thermal sensor and/or gas sensor, encompassing an electrical sensor component having an electrical property whose value changes in temperature-dependent fashion, wherein the temperature-dependent electrical property is a resistance or an impedance. Thermal and electrical decoupling of the active structure from the substrate is accomplished by way of porous silicon and/or a cavity manufactured by electropolishing. | 05-21-2009 |
| 20090200262 | Method for Producing Porous Microneedles and their Use - A method for producing porous microneedles ( | 08-13-2009 |
| 20090232334 | Micromechanical Component and Method for its Production - A cost-effective technology for implementing a micromechanical component is provided, whose layer construction includes at least one diaphragm on the upper side and at least one counter-element, a hollow space being formed between the diaphragm and the counter-element, and the counter-element having at least one through hole to a back volume. This back volume is formed by a sealed additional hollow space underneath the counter-element and is connected to the upper-side of the layer construction by at least one pressure equalization opening. This component structure permits the integration of the micromechanical sensor functions and evaluation electronics on one chip and is additionally suitable for mass production. | 09-17-2009 |
| 20090236610 | Method for Manufacturing a Semiconductor Structure, and a Corresponding Semiconductor Structure - A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided. | 09-24-2009 |
| 20090294880 | Method for manufacturing a sensor element, and sensor element - A method for manufacturing a capped sensor element by providing a substrate with a sensor structure, the sensor structure being produced in the substrate using a sacrificial material, applying a cap made of zeolite to the sensor structure and the sacrificial material, and removing the sacrificial material, the sacrificial material being removed through the cap made of zeolite. A sensor element having capping is also provided. | 12-03-2009 |
| 20100003790 | METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT HAVING A THIN-LAYER CAPPING - A capping technology is provided in which, despite the fact that structures which are surrounded by a silicon-germanium filling layer are exposed using ClF | 01-07-2010 |
| 20100035068 | Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type - A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material. | 02-11-2010 |
| 20100051810 | MICROMECHANICAL COMPONENT AND CORRESPONDING PRODUCTION METHOD - A micromechanical component and a corresponding production method. The micromechanical component includes a first component and a second component, with which the first component is connected by an alloy region; the first and second components enclosing a vacuum region or residual gas region, which is sealed by the alloy region. | 03-04-2010 |
| 20100140618 | Sensor and method for the manufacture thereof - A sensor includes at least one micro-patterned diode pixel that has a diode implemented in, on, or under a diaphragm, and the diaphragm in turn being implemented above a cavity. The diode is contacted via supply leads that are implemented at least in part in, on, or under the diaphragm, and the diode is implemented in a polycrystalline semiconductor layer. The diode is implemented by way of two low-doped diode regions or at least one low-doped diode region. At least parts of the supply leads are implemented by way of highly doped supply lead regions of the shared polycrystalline semiconductor layer. | 06-10-2010 |
| 20100155961 | MICROMECHANICAL COMPONENT HAVING WAFER THROUGH-PLATING AND CORRESPONDING PRODUCTION METHOD - A wafer through-plating through a semiconductor substrate and a method for producing this wafer through-plating. At least one via hole is inserted in the front side of a semiconductor substrate, in this context, in order to form the wafer through-plating using a trench etching process. The semiconductor material of the side wall of the via hole is then porously etched in an electrochemical etching process. A metal is introduced into the via hole in order to produce the electrical contact-making connection. In order to enable the electrical connection from the front side to the back side of the semiconductor substrate, the via hole is opened from the back side, for example, by thinning the semiconductor substrate. This opening may be made, in this context, before or after the metal is introduced into the via hole. | 06-24-2010 |
| 20100296986 | Microscreen for filtering particles in microfluidics applications and production thereof - A microscreen and its production method for filtering particles in microfluidics applications. The microscreen includes an at least regionally p-doped Si substrate having a recess, a macroporous membrane connected to the Si substrate via n-doped regions, the recess of the Si substrate being situated directly under the membrane to form a cavity. | 11-25-2010 |
| 20100308475 | COMPOSITE OF AT LEAST TWO SEMICONDUCTOR SUBSTRATES AND A PRODUCTION METHOD - A composite, including a first semiconductor substrate that is secured by soldering material to at least one second semiconductor substrate, a eutectic being formed between the soldering material and the second semiconductor substrate and/or at least one layer possibly provided on the semiconductor substrate. It is provided that the eutectic is formed between the soldering material and a microstructure, which is formed in the region of contact with the soldering material on the second semiconductor substrate and/or the layer. Also described is a production method. | 12-09-2010 |
| 20110002359 | SENSOR AND METHOD FOR PRODUCING THE SAME - A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm. | 01-06-2011 |
| 20110018078 | Manufacturing method for a micromechanical component having a thin-layer capping - A manufacturing method for a micromechanical component having a thin-layer capping. The method includes the following: forming a functional layer on a substrate; structuring the functional layer in first cutout regions having a first width and in regions of the functional layer to be removed having a second width, the second width being substantially greater than the first width; forming a first oxide layer on the structured functional layer; forming a first sealing layer on the thermally oxidized and structured functional layer, the first cutout regions having the first width being sealed; forming a cap layer on the first sealing layer; forming first through holes which extend through the cap layer, the first sealing layer, and the first oxide layer for at least partially exposing the regions of the functional layer to be removed; and selectively removing the regions of the functional layer to be removed, by introducing a first etching medium through the first through holes, resulting in second cutout regions in the functional layer which have the second width. | 01-27-2011 |
| 20110048132 | Microsystem - A microsystem, e.g., a micromechanical sensor, has a first cavity which is sealed off from the surroundings and a second cavity which is sealed off from the surroundings. The first cavity is bounded by a first bond joint and the second cavity is bounded by a second bond joint. Either the first bond joint or the second bond joint is a eutectic bond joint or a diffusion-soldered joint. | 03-03-2011 |
| 20110057236 | Inertial sensor having a field effect transistor - An inertial sensor, having a field effect transistor which includes a gate electrode ( | 03-10-2011 |
| 20110057285 | Sensor for detecting thermal radiation - A sensor having a monolithically integrated structure for detecting thermal radiation includes: a carrier substrate, a cavity, and at least one sensor element for detecting thermal radiation. Incident thermal radiation strikes the sensor element via the carrier substrate. The sensor element is suspended in the cavity by a suspension. | 03-10-2011 |
