| Patent application number | Description | Published |
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| 20080312329 | Nonpeptide Inhibitors of Matrix Metalloproteinases - Disclosed are selective inhibitors of matrix metalloproteinases represented by the following formula (I). | 12-18-2008 |
| 20090239892 | PYRIDOMORPHINANS, PYRIDAZINOMORPHINANS AND USE THEREOF - Compounds represented by the formula: | 09-24-2009 |
| 20100120745 | ANTI-ANGIOGENIC AGENTS AND METHODS OF USE - The present disclosure relates generally to treating or preventing diseases associated with angiogenesis by administering to a patient certain compounds found to inhibit or substantially reduce angiogenesis. Compounds employed according to the present disclosure exhibit good anti-angiogenic activity as well as demonstrate a prophylactic effect for preventing and substantially reducing angiogenesis. Examples of such compounds include Ritanserin, Amiodarone, Terfenadine, Perphenazine, Bithionol, and Clomipramine. | 05-13-2010 |
| 20100204338 | ANTI-ANGIOGENIC AGENTS AND METHODS OF USE - The present disclosure relates generally to treating or preventing diseases associated with angiogenesis by administering to a patient certain compounds found to inhibit or substantially reduce angiogenesis. Compounds employed according to the present disclosure exhibit good anti-angiogenic activity as well as demonstrate a prophylactic effect for preventing and substantially reducing angiogenesis. Examples of such compounds include Ritanserin, Amiodarone, Terfenadinc, Perphenazine, Bithionol, and Clomipramine. | 08-12-2010 |
| 20110060000 | ACRIDINE ANALOGS IN THE TREATMENT OF GLIOMAS - Disclosed are methods and compositions for treating gliomas that involve quinacrine and other acridine analogs. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention. | 03-10-2011 |
| Patent application number | Description | Published |
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| 20090026522 | SEMICONDUCTOR DEVICE COMPRISING TRANSISTOR STRUCTURES AND METHODS FOR FORMING SAME - A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the rounded portion. This opening may be filled with a conductor, a dielectric, or both. Embodiments to form a transistor gate, shallow trench isolation, and an isolation material separating a transistor source and drain are disclosed. Device structures formed by the method are also described. | 01-29-2009 |
| 20090206418 | Semiconductor Constructions - The invention includes methods of forming PMOS transistors and NMOS transistors. The NMOS transistors can be formed to have a thin silicon-containing material between a pair of metal nitride materials, while the PMOS transistors are formed to have the metal nitride materials directly against one another. The invention also includes constructions which contain an NMOS transistor gate stack having a thin silicon-containing material between a pair of metal nitride materials. The silicon-containing material can, for example, consist of silicon, conductively-doped silicon, or silicon oxide; and can have a thickness of less than or equal to about 30 angstroms. | 08-20-2009 |
| 20110006365 | Semiconductor Device Comprising Transistor Structures and Methods for Forming Same - A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the rounded portion. This opening may be filled with a conductor, a dielectric, or both. Embodiments to form a transistor gate, shallow trench isolation, and an isolation material separating a transistor source and drain are disclosed. Device structures formed by the method are also described. | 01-13-2011 |
| 20110042754 | Gate Stacks and Semiconductor Constructions - The invention includes methods of forming PMOS transistors and NMOS transistors. The NMOS transistors can be formed to have a thin silicon-containing material between a pair of metal nitride materials, while the PMOS transistors are formed to have the metal nitride materials directly against one another. The invention also includes constructions which contain an NMOS transistor gate stack having a thin silicon-containing material between a pair of metal nitride materials. The silicon-containing material can, for example, consist of silicon, conductively-doped silicon, or silicon oxide; and can have a thickness of less than or equal to about 30 angstroms. | 02-24-2011 |
