Patent application number | Description | Published |
20090269238 | Nickel material for chemical plant - A nickel material, which comprises by mass percent, C: 0.003 to 0.20% and one or more elements selected from Ti, Nb, V and Ta: a total content less than 1.0%, the contents of these elements satisfying the relationship specified by the formula of “( 12/48)Ti+( 12/93)Nb+( 12/51)V+( 12/181)Ta—C≧0”, with the balance being Ni and impurities, does not deteriorate in the mechanical properties and corrosion resistance even when it is used at a high temperature for a long time and/or it is affected by the heat affect on the occasion of welding. Therefore, it can be suitably used as a member for use in various chemical plants including facilities for producing caustic soda, vinyl chloride and so on. Each element symbol in the above formula represents the content by mass percent of the element concerned. | 10-29-2009 |
20100032061 | METHOD FOR MANUFACTURING A Ni-BASED ALLOY ARTICLE AND PRODUCT THEREFROM - A method for manufacturing a Ni-based alloy article which elutes little Ni even when used in a high-temperature water environment for a long period comprises heating the Ni-based alloy in a carbon dioxide-containing atmosphere for a set period of time at an elevated temperature to form an oxide film comprising chromium oxide on a surface thereof. Using carbon dioxide as an oxidizing gas produces an oxide film of generally uniform thickness along a length of the article being treated so that resistance to nickel elution is more uniform over the entire article. | 02-11-2010 |
20110183151 | HIGH-STRENGTH Ni-BASED ALLOY TUBE FOR NUCLEAR POWER USE AND METHOD FOR MANUFACTURING THE SAME - [Problem to be Solved] There are provided a high-strength Ni-based alloy tube for nuclear power use having uniform high temperature strength throughout the overall length of tube and a method for manufacturing the same. | 07-28-2011 |
20140286698 | WELDING MATERIAL AND WELDING JOINT - There is provided a welding material used for welding of SUS310 stainless steel base metal that contains at least one of Nb and V and is excellent in intergranular corrosion resistance, the chemical composition of the welding material consisting, by mass percent, of C: 0.02% or less, Si: 2% or less, Mn: 2% or less, Cr: 26 to 50%, N: 0.15% or less, P: 0.02% or less, S: 0.002% or less, and Ni: a content percentage satisfying [5≦Ni≦Cr−14], and the balance of Fe and impurities. Also, there is provided a welding joint of an austenitic stainless steel, which consists of the base metal and a weld metal formed by using the welding material. | 09-25-2014 |
Patent application number | Description | Published |
20130026720 | ELECTROSTATIC CHUCK - An electrostatic chuck comprises: a ceramic plate provided with recesses on a major surface and provided with an electrode in an inner part of the ceramic plate; a temperature regulating plate bonded to the major surface of the ceramic plate; a first bonding agent provided between the ceramic plate and the temperature regulating plate; and a heater provided in the each of the recesses of the ceramic plate. The first bonding agent has a first major agent including an organic material, a first amorphous filler including an inorganic material, and a first spherical filler including an inorganic material. The first amorphous filler and the first spherical filler are dispersion-compounded into the first major agent. The first major agent, the first amorphous filler, and the first spherical filler are made of an electrically insulating material. An average diameter of the first spherical filler is greater than a maximum value of a minor axis of the first amorphous filler. A thickness of the first bonding agent is greater than or equal to the average diameter of the first spherical filler. A width of the each of the recesses is greater than a width of the heater, and a depth of the each of the recesses is greater than a thickness of the heater. The heater is adhered within the each of the recesses by a second bonding agent. A first distance between a major surface of the heater on the side of the temperature regulating plate and a major surface of the temperature regulating plate is greater than a second distance between the major surface between the recesses of the ceramic plate and the major surface of the temperature regulating plate. | 01-31-2013 |
20130027838 | ELECTROSTATIC CHUCK - An electrostatic chuck includes: a ceramic substrate; a ceramic dielectric body provided on a top side of the ceramic substrate and having a first major surface where a processing target substrate is to be mounted; and an electrode provided between the ceramic substrate and the ceramic dielectric body. A material of the ceramic dielectric body is a ceramic sintered body. A plurality of protrusions and a groove for supplying a gas are provided on the first major surface of the ceramic dielectric body. A through hole is provided in a bottom face of the groove, the through hole penetrating to a second major surface of the ceramic substrate on a side opposite to the first major surface. A distance between the electrode and the groove is greater than or equal to a distance between the electrode and the first major surface. | 01-31-2013 |
20140063681 | ELECTROSTATIC CHUCK - To provide an electrostatic chuck, including: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted, and a second major surface on a side opposite the first major surface, the ceramic dielectric substrate being a polycrystalline ceramic sintered body; and an electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate, the ceramic dielectric substrate including a first dielectric layer between the electrode layer and the first major surface, and a second dielectric layer between the electrode layer and the second major surface, and at least the first dielectric layer of the ceramic dielectric substrate having an infrared spectral transmittance in terms of a thickness of 1 millimeter (mm) of not less than 20%. | 03-06-2014 |
20140063682 | ELECTROSTATIC CHUCK - To provide an electrostatic chuck, including: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted, and a second major surface on a side opposite the first major surface, the ceramic dielectric substrate being a polycrystalline ceramic sintered body; and an electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate, and the electrode layer includes a first portion having conductivity, and a second portion that bonds the first dielectric layer and the second dielectric layer, and the mean grain size of crystals included in the second portion is smaller than the mean grain size of crystals included in the ceramic dielectric substrate. | 03-06-2014 |
20140071582 | ELECTROSTATIC CHUCK - To provide an electrostatic chuck, including: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted, and a second major surface on a side opposite the first major surface, the ceramic dielectric substrate being a polycrystalline ceramic sintered body; and an electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate, a temperature control plate provided on the second major surface side; and a heater provided between the electrode layer and the temperature control plate, and the first dielectric layer and the second dielectric layer of the ceramic dielectric substrate having an infrared spectral transmittance in terms of a thickness of 1 mm of not less than 20%. | 03-13-2014 |
20140340813 | AC-DRIVEN ELECTROSTATIC CHUCK - According to an aspect of an embodiment of the invention, there is provided an AC-driven electrostatic chuck including: a dielectric substrate including protrusions formed on a major surface on a side of mounting a clamped object, and a bottom surface part formed around the protrusions; and an electrode provided on the dielectric substrate, the electrode including a plurality of electrode elements spaced from each other, the plurality of electrode elements being enabled to be applied with an AC voltage of mutually different phases, respectively, and the protrusions being arranged on the major surface with a prescribed spacing depending on shape of the plurality of electrode elements. The AC-driven electrostatic chuck is capable of suppressing local damage to part of the protrusions provided on the mounting surface side. | 11-20-2014 |
20140355170 | ELECTROSTATIC CHUCK - An electrostatic chuck includes: a ceramic dielectric substrate having a first major surface and a second major surface; an electrode interposed between the first and second major surfaces; and a connecting part connected to the electrode and including a first region in contact with the electrode, with a first direction being defined as a direction from the first major surface toward the second major surface, and a second direction being defined as a direction orthogonal to the first direction, the first region being configured so that in a cross section of the electrode and the connecting part as viewed in the second direction, an angle on a side of the connecting part between an extension line along outer shape on the side of second major surface of the electrode and a tangential line of outer shape of the connecting part gradually increases in the first direction. | 12-04-2014 |
20150279714 | ELECTROSTATIC CHUCK - According to an aspect of the invention, there is provided an electrostatic chuck including: a ceramic dielectric substrate having a first major surface, a second major surface, and a through-hole; a metallic base plate which has a gas introduction path that communicates with the through-hole; and a bonding layer which is provided between the ceramic dielectric substrate and the base plate and includes a resin material, the bonding layer having a space which is provided between an opening of the through-hole in the second major surface and the gas introduction path and is larger than the opening in a horizontal direction, and a first area in which an end face of the bonding layer on a side of the space intersects with the second major surface being recessed from the opening further than another second area of the end face which is different from the first area. | 10-01-2015 |