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Amishiro
Hiroyuki Amishiro, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110012231 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication. | 01-20-2011 |
Masatsugu Amishiro, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080230847 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films | 09-25-2008 |
| 20090184424 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - The production of a crack in an insulating film under an external terminal of a semiconductor device due to external force applied to the external terminal is suppressed or prevented. Over the principal surface of a semiconductor substrate, there are formed multiple wiring layers. In the fifth wiring layer directly under the uppermost wiring layer of the wiring layers, the following measure is taken: a conductor pattern (fifth wiring, dummy wiring, and plug) is not formed directly under the probe contact area of each bonding pad PD in the uppermost wiring layer. In the fifth wiring layer, conductor patterns (fifth wiring, dummy wirings, and plugs) are formed in the areas other than directly under the probe contact area of each bonding pad in the uppermost wiring layer. | 07-23-2009 |
| 20110001246 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films | 01-06-2011 |
Masatsugu Amishiro, Hitachi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090115506 | INTERFACE DEVICE AND INFORMATION PROCESSING SYSTEM - A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal. | 05-07-2009 |
Nobuyoshi Amishiro, Sunto-Gun JP
| Patent application number | Description | Published |
|---|---|---|
| 20090054407 | Nitrogen-containing heterocyclic compound - The present invention provides a nitrogen-containing heterocyclic compound represented by formula (I): | 02-26-2009 |
Nobuyoshi Amishiro, Sakai-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110237584 | KYNURENINE PRODUCTION INHIBITOR - Provided is a kynurenine production inhibitor comprising a nitrogen-containing heterocyclic compound represented by formula (I): | 09-29-2011 |