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Amanokura, JP
Jin Amanokura, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20090156007 | Polishing slurry and polishing method - The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor. | 06-18-2009 |
| 20100216309 | CMP POLISHING LIQUID AND METHOD FOR POLISHING SUBSTRATE USING THE SAME - Disclosed is a CMP polishing liquid for polishing a substrate having a layer containing ruthenium, comprising: an oxidizing agent; polishing particles; water; and a compound having a structure represented by the following Formula (1), or a salt thereof. This CMP liquid is improved in at least the polishing rate to a ruthenium layer when compared with conventional polishing liquid. Also disclosed is a method for polishing a substrate using such a CMP polishing liquid. | 08-26-2010 |
| 20110027997 | POLISHING LIQUID FOR CMP AND POLISHING METHOD - The present invention can provide a polishing liquid for CMP having good dispersion stability and a high polishing rate in polishing of interlayer insulating films and a polishing method. Disclosed a polishing liquid for CMP comprising: a medium; and colloidal silica particles dispersed in the medium, a blending amount of the colloidal silica particles being 2.0 to 8.0% by mass relative to 100% by mass of the polishing liquid, | 02-03-2011 |
Jin Amanokura, Hitachi-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100120250 | METAL POLISHING SLURRY AND POLISHING METHOD - The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs. | 05-13-2010 |
| 20100323584 | POLISHING LIQUID FOR METAL FILM AND POLISHING METHOD - The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, | 12-23-2010 |
Natsuki Amanokura, Ichihara-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100274006 | Clathrate compound, method for controlling concentration of aqueous agricultural chemical active ingredient solution, and agricultural chemical formulation - A clathrate compound containing a polymolecular host compound as a host compound and an agricultural chemical active ingredient having a saturated solubility in water at 25° C. of not less than 500 ppm as a guest compound. | 10-28-2010 |
Natsuki Amanokura, Ichihara JP
| Patent application number | Description | Published |
|---|---|---|
| 20100022744 | CLATHRATE COMPOUND, CURING CATALYST, COMPOSITION FOR FORMING CURED RESIN, AND CURED RESIN - The present invention provides a curing catalyst (clathrate compound) for which the curing reaction is suppressed at low temperatures, allowing an improvement in the one-pot stability, but which can effectively cure a resin upon heat treatment. The clathrate compound comprises at least an isophthalic acid compound represented by a formula (1) [wherein R | 01-28-2010 |
| 20100179250 | INCLUSION COMPLEX CONTAINING EPOXY RESIN COMPOSITION FOR SEMICONDUCTOR ENCAPSULATION - It is to improve the storage stability of a sealant, to retain the flowability of the sealant when sealing, and to achieve an effective curing rate of the sealant by heating to be applicable as a sealant for delicate semiconductors. | 07-15-2010 |
Natsuki Amanokura, Chiba JP
| Patent application number | Description | Published |
|---|---|---|
| 20120004349 | Epoxy resin composition, curing agent, and curing accelerator - The present invention provides a liquid curable epoxy resin composition that has excellent storage stability and curing properties and provides a cured product having excellent properties, particularly, excellent organic solvent resistance. For that purpose, a clathrate containing a carboxylic acid compound and at least one selected from the group consisting of an imidazole compound represented by formula (I), wherein R | 01-05-2012 |