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Amal
Amal Akheyar, Elsene BE
| Patent application number | Description | Published |
|---|---|---|
| 20090050982 | Method for Modulating the Effective Work Function - A new MOSFET device is described comprising a metal gate electrode, a gate dielectric and an interfacial layer. The interfacial layer comprises a lanthanum hafnium oxide material for modulating the effective work function of the metal gate. The gate dielectric material in contact with the interfacial layer is different that the interfacial layer material. A method for its manufacture is also provided and its applications. | 02-26-2009 |
Amal Ekbal, Sandiego, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100020863 | DETERMINATION OF RECEIVE DATA VALUES - Adverse effects associated with collisions in a wireless communication system are mitigated by defining one or more values for receive data. Here, data that is expected to be received during a data transmission may be set to a defined value. In some cases the defined value is a predefined value (e.g., zero or some other value). In some cases the defined value is based on noise and/or signals levels in the system. In some implementations a device may define receive data values for a period of time during which data is expected to be received and during which a transmission occurs. In some aspects a hybrid on-off keying scheme is employed to determine received data values. | 01-28-2010 |
Amal Elabbadi, Annemasse FR
| Patent application number | Description | Published |
|---|---|---|
| 20100055256 | ACTIVE INGREDIENT DELIVERY SYSTEM WITH AN AMORPHOUS METAL SALT AS CARRIER - An active ingredient delivery system and a method of making or using the same, wherein the delivery system includes an active ingredient and a carrier component of an amorphous metal salt, with the active ingredient at least partly fixed to and partly encapsulated by the carrier component. The active ingredient may be a bitter tasting polyphenol such as a flavonoid. | 03-04-2010 |
| 20110082071 | DELIVERY SYSTEM FOR AN ACTIVE INGREDIENT - The invention relates to a delivery system for an active ingredient. The system provides an encapsulating material for the active ingredient, wherein the encapsulating material is formed by combining a cationic component, an anionic component and the active ingredient. The anionic component is a mixture of carbonate and phosphate moieties, wherein the molar ratio of carbonate to phosphate moieties is from 9:1 to 1:9. | 04-07-2011 |
Amal Elgawadi, Stillwater, OK US
| Patent application number | Description | Published |
|---|---|---|
| 20110201180 | FABRICATION OF GAN AND III-NITRIDE ALLOYS FREESTANDING EPILAYERS MEMBRANES USING A NONBONDING LASER - Using a laser lift-off (LLO) nonbonding technique, freestanding 4-layer GaN/AlGaN heterostructure membranes have been formed. A 4×4 mm mask was attached to the area at the center of the most-upper AlGaN layer was attached using a nonbonding material such as vacuum grease. A microscopic slide attached by an adhesive provided support for the structure during the laser lift-off without bonding to the layers. The vacuum grease and the mask isolated the adhesive from the structure at the center. The microscopic slide served as a temporarily nonbonding handle substrate. Laser lift-off of the sapphire substrate from the heterostructures was performed. The remaining adhesive served as a supporting frame for the structure making a free-standing 4-layer GaN/AGaN heterostructure membrane. Other frameless freestanding membranes can be fabricated for a variety of applications including further III-nitride growth, heterogeneous integration, packaging of micro systems, and thin film patterns. | 08-18-2011 |
Amal Ikhlassi, Thousand Oaks, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110018034 | HETEROGENEOUS INTEGRATION OF LOW NOISE AMPLIFIERS WITH POWER AMPLIFIERS OR SWITCHES - A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate having a first end and a second end, a conducting layer above the first end of the substrate, an isolation implant providing lateral isolation in the conducting layer, a first active layer deposited above the conducting layer and configured for the low-noise amplifier, and a buffer layer deposited above the conducting layer and configured for the low-noise amplifier. | 01-27-2011 |
| 20110031531 | PROCESS FOR FORMING LOW DEFECT DENSITY HETEROJUNCTIONS - A method for forming a low defect density heterojunction between a first and a second compound, the first and second compounds each includes a group III element combined with a group V element in the periodic table, the method includes the steps of introducing in the deposition chamber the flux of the group III element for the first compound at substantially the same time while introducing in the deposition chamber a flux of the group V element for the second compound, stopping the flux of the group III element for the first compound after a first predetermined time period, stopping the flux of the group V element for the first compound after a second predetermined time period, and introducing in the deposition chamber a flux of the group III element the group V element for the second compound. | 02-10-2011 |
| 20110143518 | HETEROGENEOUS INTEGRATION OF LOW NOISE AMPLIFIERS WITH POWER AMPLIFIERS OR SWITCHES - A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate having a first end and a second end, a conducting layer above the first end of the substrate, an isolation implant providing lateral isolation in the conducting layer, a first active layer deposited above the conducting layer and configured for the low-noise amplifier, and a buffer layer deposited above the conducting layer and configured for the low-noise amplifier. | 06-16-2011 |
| 20110220967 | PROCESS FOR FORMING LOW DEFECT DENSITY HETEROJUNCTIONS - A method for forming a low defect density heterojunction between a first and a second compound, the first and second compounds each includes a group III element combined with a group V element in the periodic table, the method includes the steps of introducing in the deposition chamber the flux of the group III element for the first compound at substantially the same time while introducing in the deposition chamber a flux of the group V element for the second compound, stopping the flux of the group III element for the first compound after a first predetermined time period, stopping the flux of the group V element for the first compound after a second predetermined time period, and introducing in the deposition chamber a flux of the group III element the group V element for the second compound. | 09-15-2011 |
Amal Kasry, White Plains, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20120000516 | Graphene Solar Cell - A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion. | 01-05-2012 |
| 20120000521 | Graphene Solar Cell And Waveguide - A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion, a plurality of fingers extending from the at least one bus bar portion, and a refractive layer disposed on the first conductive layer. | 01-05-2012 |
Amal Kündig, Lausanne CH
Amal Kündig, Lausanne CH
Amal Wahhab, Laval CA
| Patent application number | Description | Published |
|---|---|---|
| 20080280925 | Amines as Small Molecule Inhibitors - The present invention relates to compounds that are useful as inhibitors of protein arginine methyltransferase that have a formula selected from Formula (I), Formula (II) and Formula (III), as well as racemic mixtures, diastereomers, enantiomers and tautomers thereof and N-oxides, hydrates, solvates, pharmaceutically acceptable salts, prodrugs and complexes thereof as defined herein. Said compound are useful as inhibitors of PRMTs and/or CARM-I. The invention further relates to compositions comprising such compounds and methods for their use. | 11-13-2008 |
Amal Wahhab, Quebec CA
| Patent application number | Description | Published |
|---|---|---|
| 20100216766 | Inhibitors of VEGF Receptor and HGF Receptor Signalling - The invention relates to the inhibition of VEGF receptor signaling and HGF receptor signaling. The invention provides compounds and methods for inhibiting VEGF receptor signaling and HGF receptor signaling. The invention also provides compositions and methods for treating cell proliferative diseases and conditions | 08-26-2010 |