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Allsop
Jamey J. Allsop, Ketchum, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20090175034 | SOLAR-POWERED COLLAPSIBLE LIGHTING APPARATUS - A solar-powered collapsible lighting apparatus and methods of assembling such a lighting apparatus are disclosed. | 07-09-2009 |
John R. Allsop, Victoria AU
| Patent application number | Description | Published |
|---|---|---|
| 20110309600 | Coupling Device - A coupling device for coupling a first vehicle to a second towed vehicle, the coupling device including a pillar ( | 12-22-2011 |
John Rodney Allsop, Victoria AU
| Patent application number | Description | Published |
|---|---|---|
| 20090078732 | Carrying device mountable on a tow-ball - This is a device where one component is a member which, without recourse to any tools, can be attached to or removed from a tow-ball that is anchored to or integral with a tow-bar. The member is rigidly located and unable to move in any plane or about any axis when it is engaged with the tow-ball and the remainder of the device. The member has an integral platform that can be used to support and or tow any desired object e.g. bicycles on a rack attached to the platform. | 03-26-2009 |
Mark L. Allsop, Wahroonga AU
| Patent application number | Description | Published |
|---|---|---|
| 20110302462 | SEVERITY MAP OF CHANGE-INDUCED PERVASIVE SERVICES OUTAGES - A computer implemented method, system and/or computer program product handle problems caused by a modification to an information technology (IT) system. Problem-data, describing a known problem to a first IT system that occurred during a modification to the first IT system; severity-data, describing a severity of the known problem; and solution-data, describing a solution of steps to be taken to correct the known problem, are received and stored. A modification alert indicates that the modification will be applied to a second IT system that is different from the first IT system. If the first IT system and the second IT system share a pre-determined amount of common features, then a severity map, which describes the known problem, the severity of the known problem, and the solution to the known problem as applied to the second IT system, is displayed to a user of the second IT system. | 12-08-2011 |
Nicholas Allsop, Berlin DE
| Patent application number | Description | Published |
|---|---|---|
| 20110081734 | METHOD AND ARRANGEMENT FOR PRODUCING AN N-SEMICONDUCTIVE INDIUM SULFIDE THIN LAYER - A method of producing, at atmospheric pressure, an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream includes cyclically repeating first and second steps so as to produce an indium sulfide thin film of a desired thickness. The first method phase includes converting the indium-containing precursor to at least one of a dissolved and a gaseous phase, heating the substrate to a temperature in a range of 100° C. to 275° C., directing the indium containing precursor onto the substrate and supplying hydrogen sulfide to the indium-containing precursor in a mixing zone in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume. The indium concentration of the indium-containing precursor is set so as to produce a compact In(OH | 04-07-2011 |
| 20110104876 | ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION METHOD FOR PRODUCING A N-SEMICONDUCTIVE METAL SULFIDE THIN LAYER - An atmospheric pressure chemical vapor deposition method for producing an N-type semiconductive metal sulfide thin film on a heated substrate includes converting an indium-containing precursor to at least one of a liquid phase and a gaseous phase. The indium-containing precursor is mixed with an inert carrier gas stream and hydrogen sulfide in a mixing zone so as to form a mixed precursor. A substrate is heated to a temperature in a range of 100° C. to 275° C. and the mixed precursor is directed onto the substrate. The hydrogen sulfide is supplied at a rate so as to obtain an absolute concentration of hydrogen sulfide in the mixing zone of no more than 1% by volume. The In-concentration of the indium containing precursor is selected so as to produce a compact indium sulfide film. | 05-05-2011 |
Paul Allsop, Norfolk GB
| Patent application number | Description | Published |
|---|---|---|
| 20090065533 | Dispensing apparatus - A dispensing apparatus comprising a dispensing container assembled with a metering valve. The dispensing container defines a storage volume for a product and the dispensing container comprises a neck terminating in an open top for receiving the metering valve. The open top extends radially outwardly relative to the neck to define a support surface. | 03-12-2009 |
| 20100051651 | METERING VALVE AND DISPENSING APPARATUS - A metering valve ( | 03-04-2010 |
Thomas David Paul Allsop, South Humberside GB
| Patent application number | Description | Published |
|---|---|---|
| 20090303489 | Surface Plasmons - The generation of surface plasmons on a metal layer arranged upon an outer surface of an optical waveguide, using light reflected from inside the optical waveguide. The reflected light may be a reflected part of guided light travelling along the optical waveguide and may be a back-reflected (e.g. obliquely back-reflected) part of the guided light. The reflected part of guided light may form a radiative optical mode(s) which is used to excite surface plasmons and which is also coupled to the remaining guided mode(s) of the light from which it derives. This coupling of the radiation mode(s) and the guided mode(s) enables changes in the radiation mode(s) to cause consequential changes in the guided mode(s) of light. Such changes in the radiation mode(s) may occur due to the coupling of the reflected mode(s) to the surface plasmons they excite at the metal layer. | 12-10-2009 |
Thomas David Paul Allsop, Birmingham GB
| Patent application number | Description | Published |
|---|---|---|
| 20110116094 | Method of Producing a Surface Plasmon Generator, a Surface Plasmon Generator and a Sensor Incorporating the Surface Plasmon Generator - Surface plasmon generation on a metal or semiconductor layer at an outer surface of an optical waveguide, using light reflected or scattered from inside the optical waveguide. One aspect provides a main optical waveguide ( | 05-19-2011 |