| Patent application number | Description | Published |
|---|
| 20080304305 | BOOST CONVERTER WITH INTEGRATED HIGH POWER DISCRETE FET AND LOW VOLTAGE CONTROLLER - A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package. | 12-11-2008 |
| 20080304306 | HIGH VOLTAGE AND HIGH POWER BOOST CONVETER WITH CO-PACKAGED SCHOTTKY DIODE - A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad. | 12-11-2008 |
| 20090008758 | USE OF DISCRETE CONDUCTIVE LAYER IN SEMICONDUCTOR DEVICE TO RE-ROUTE BONDING WIRES FOR SEMICONDUCTOR DEVICE PACKAGE - A semiconductor package assembly may include a lead frame having a die bonding pad and plurality of leads coupled to the first die bonding pad. A vertical semiconductor device may be bonded to the die bonding pad. The device may have a conductive pad electrically connected to one lead through a first bond wire. An electrically isolated conductive trace may be formed from a layer of conductive material of the first semiconductor device. The conductive trace provides an electrically conductive path between the first bond wire and a second bond wire. The conductive path may either pass underneath a third bond wire thereby avoiding the third bond wire crossing another bond wire, or the conductive path may result in a reduced length for the first and second bond wires that is less than a predetermined maximum length. | 01-08-2009 |
| 20090128968 | STACKED-DIE PACKAGE FOR BATTERY POWER MANAGEMENT - A stacked-die package for battery protection is disclosed. The battery protection package includes a power control integrated circuit (IC) stacked on top of integrated dual common-drain metal oxide semiconductor field effect transistors (MOSFETs) or two discrete MOSFETs. The power control IC is either stacked on top of one MOSFET or on top of and overlapping both two MOSFETs. | 05-21-2009 |
| 20100090755 | Current Limiting Load Switch with Dynamically Generated Tracking Reference Voltage - A current limiting load switch for bridging supply Vss and load with a reference voltage VR | 04-15-2010 |
| 20100225296 | HIGH VOLTAGE AND HIGH POWER BOOST CONVETER WITH CO-PACKAGED SCHOTTKY DIODE - A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad. | 09-09-2010 |
| 20110012194 | Multi-die DC-DC Buck Power Converter with Efficient Packaging - A DC-DC buck converter in multi-die package is proposed having an output inductor, a low-side Schottky diode and a high-side vertical MOSFET controlled by a power regulating controller (PRC). The multi-die package includes a first die pad with the Schottky diode placed there on side by side with the vertical MOSFET. The PRC die is attached atop the first die pad via an insulating die bond. Alternatively, the first die pad is grounded. The vertical MOSFET is a top drain N-channel FET, the substrate of Schottky diode die is its anode. The Schottky diode and the vertical MOSFET are stacked atop the first die pad. The PRC is attached atop the first die pad via a conductive die bond. The Schottky diode die can be supplied in a flip-chip configuration with cathode being its substrate. Alternatively, the Schottky diode is supplied with anode being its substrate without the flip-chip configuration. | 01-20-2011 |
| 20110095833 | FLEXIBLE LOW CURRENT OSCILLATOR FOR MULTIPHASE OPERATIONS - A method for generating an oscillator signal uses a multiphase oscillator having a plurality of input stages and a reference stage. Each input stage produces an input stage voltage that represents a phase for the oscillator. The input stage voltages produced by each of the input stages are compared to a reference voltage produced by the reference stage. An input stage having a maximum input stage voltage is selected and an output of the selected input stage having the maximum input stage voltage is changed. A current need of the oscillator is detected with a negative feedback loop coupled to the reference stage. An appropriate supply current is provided to each input stage with the negative feedback loop. | 04-28-2011 |
| 20110108998 | USE OF DISCRETE CONDUCTIVE LAYER IN SEMICONDUCTOR DEVICE TO RE-ROUTE BONDING WIRES FOR SEMICONDUCTOR DEVICE PACKAGE - A semiconductor package assembly may include a lead frame having a die bonding pad and plurality of leads coupled to the first die bonding pad. A vertical semiconductor device may be bonded to the die bonding pad. The device may have a conductive pad electrically connected to one lead through a first bond wire. An electrically isolated conductive trace may be formed from a layer of conductive material of the first semiconductor device. The conductive trace provides an electrically conductive path between the first bond wire and a second bond wire. The conductive path may either pass underneath a third bond wire thereby avoiding the third bond wire crossing another bond wire, or the conductive path may result in a reduced length for the first and second bond wires that is less than a predetermined maximum length. | 05-12-2011 |
