Patent application number | Description | Published |
20100074015 | SENSING FOR MEMORY READ AND PROGRAM VERIFY OPERATIONS IN A NON-VOLATILE MEMORY DEVICE - Methods for sensing in a memory device, a memory device, and a memory system are disclosed. In one such sensing method, a single read operation with multiple sense amplifier circuit comparisons to a reference threshold level are performed to determine a state of a selected memory cell. A ramped voltage turns on the selected memory cell when the ramped voltage reaches the threshold voltage to which the selected memory cell is programmed. In one embodiment, the turned on memory cell discharges its respective bit line. | 03-25-2010 |
20100124108 | PROGRAMMING METHODS AND MEMORIES - Programming a memory in two parts to reduce cell disturb is disclosed. In at least one embodiment, data is programmed in two or more sequences of programming pulses with data requiring higher programming voltages programmed first. During each programming sequence, the data which is not being currently selected for programming is inhibited. Overlapping levels and/or voltage ranges can be used. | 05-20-2010 |
20110134701 | MEMORY KINK COMPENSATION - This disclosure concerns memory kink compensation. One method embodiment includes applying a number of sequentially incrementing programming pulses to a memory cell, with the sequential programming pulses incrementing by a first programming pulse step voltage magnitude. A seeding voltage is applied after applying the number of sequentially incrementing programming pulses. A next programming pulse is applied after applying the seeding voltage, with the next programming pulse being adjusted relative to a preceding one of the sequentially incrementing programming pulses by a second programming pulse step voltage magnitude. The second programming pulse step voltage magnitude can be less than the first programming pulse step voltage magnitude. | 06-09-2011 |
20120092932 | PROGRAMMING METHODS AND MEMORIES - Programming a memory in two parts to reduce cell disturb is disclosed. In at least one embodiment, data is programmed in two or more sequences of programming pulses with data requiring higher programming voltages programmed first. During each programming sequence, the data which is not being currently selected for programming is inhibited. Overlapping levels and/or voltage ranges can be used. | 04-19-2012 |
20120307564 | METHOD FOR KINK COMPENSATION IN A MEMORY - This disclosure concerns memory kink compensation. One method embodiment includes applying a number of sequentially incrementing programming pulses to a memory cell, with the sequential programming pulses incrementing by a first programming pulse step voltage magnitude. A seeding voltage is applied after applying the number of sequentially incrementing programming pulses. A next programming pulse is applied after applying the seeding voltage, with the next programming pulse being adjusted relative to a preceding one of the sequentially incrementing programming pulses by a second programming pulse step voltage magnitude. The second programming pulse step voltage magnitude can be less than the first programming pulse step voltage magnitude. | 12-06-2012 |
20140043912 | METHOD FOR KINK COMPENSATION IN A MEMORY - This disclosure concerns memory kink compensation. One method embodiment includes applying a number of sequentially incrementing programming pulses to a memory cell, with the sequential programming pulses incrementing by a first programming pulse step voltage magnitude. A seeding voltage is applied after applying the number of sequentially incrementing programming pulses. A next programming pulse is applied after applying the seeding voltage, with the next programming pulse being adjusted relative to a preceding one of the sequentially incrementing programming pulses by a second programming pulse step voltage magnitude. The second programming pulse step voltage magnitude can be less than the first programming pulse step voltage magnitude. | 02-13-2014 |
20150262657 | TWO-PART PROGRAMMING METHODS - Programming a memory in two parts to reduce cell disturb is disclosed. In at least one embodiment, data is programmed in two or more sequences of programming pulses with data requiring higher programming voltages programmed first. During each programming sequence, the data which is not being currently selected for programming is inhibited. Overlapping levels and/or voltage ranges can be used. | 09-17-2015 |