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Alistair Graeme Prince, Bedminster GB
Alistair Graeme Prince, Bedminster GB
| Patent application number | Description | Published |
|---|---|---|
| 20090101872 | LEAD-FREE CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: Mg-CONTAINING ADDITIVE - Described herein are a silicon semiconductor device and a conductive lead-free silver paste for use in the front side of a solar cell device. | 04-23-2009 |
| 20090104461 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: Mg-CONTAINING ADDITIVE - Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device. | 04-23-2009 |
| 20100059116 | ALUMINUM PASTES AND USE THEREOF IN THE PRODUCTION OF SILICON SOLAR CELLS - Described are aluminum pastes comprising spherical-shaped and nodular-shaped particulate aluminum and an organic vehicle and their use in forming p-type aluminum back electrodes of silicon solar cells. | 03-11-2010 |
| 20100269893 | METAL PASTES AND USE THEREOF IN THE PRODUCTION OF POSITIVE ELECTRODES ON P-TYPE SILICON SURFACES - Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper, and nickel, (b) at least one p-type silicon alloy powder, and (c) an organic vehicle, wherein the p-type silicon alloy is selected from the group consisting of alloys comprising silicon and boron, alloys comprising silicon and aluminum and alloys comprising silicon, boron and aluminum. | 10-28-2010 |
| 20100275997 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: MG-CONTAINING ADDITIVE - Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device. | 11-04-2010 |
| 20100317143 | PROCESS OF FORMING A SILICON SOLAR CELL - A process for the production of a silicon solar cell comprising application and firing of an aluminum paste which comprises magnesium oxide and/or magnesium compounds capable of forming magnesium oxide on firing on the back-side of a silicon wafer provided with a silicon nitride antireflective coating on its front-side and being contaminated with silicon nitride on its back-side, and firing the aluminum paste after its application. | 12-16-2010 |
| 20110120535 | ALUMINUM PASTES AND USE THEREOF IN THE PRODUCTION OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS - An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO | 05-26-2011 |