Alie
Emmanuel Alie, Grasse FR
Patent application number | Description | Published |
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20100070719 | SLAVE AND A MASTER DEVICE, A SYSTEM INCORPORATING THE DEVICES, AND A METHOD OF OPERATING THE SLAVE DEVICE - The electronic slave device ( | 03-18-2010 |
20100182033 | TESTABLE INTEGRATED CIRCUIT AND TEST METHOD - An integrated circuit ( | 07-22-2010 |
Jean-Claude Alie, Bagstogne BE
Patent application number | Description | Published |
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20100122757 | TIRE AND ELECTRONIC DEVICE ASSEMBLY - A tire and electronic device assembly includes an electronic device in which a transponder tag is coupled to a dipole antenna formed by first and second elongate antenna segments. The transponder tag and at least a portion of the dipole antenna are at least partially embedded within a compound having compatible permittivity and conductivity with operation of the dipole antenna and the electronic device is mounted to the tire apex in a position between the tire apex and the tire sidewall at a predetermined distance above an ending of the tire ply and in an orientation placing a longitudinal axis of the dipole antenna perpendicular to the cords of the tire ply. | 05-20-2010 |
Jean-Claude Alie, Bastogne BE
Patent application number | Description | Published |
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20100123584 | METHOD OF EMBEDDING AN ELECTRONIC DEVICE IN A TIRE - A method for embedding a RFID tag in a tire includes: selecting a compound having compatible permittivity and conductivity with operation of a tag dipole antenna; embedding a tag transponder device and at least a portion of the dipole antenna within the compound; orienting the tag to place a longitudinal axis of the dipole antenna perpendicular to cords of a tire ply in an uncured tire; and placing the tag between a tire apex and a tire sidewall of the uncured tire, at a predetermined distance above an ending of the tire ply. The tag may be positioned axially between a tire chafer ending and a tire apex ending and mounted to the tire apex a distance of at least 10 mm above the ply ending. The method may include substantially encapsulating the transponder device and coupled ends of the dipole antenna in the compound; and extending from the encapsulated dipole coupled ends compound-free dipole end segments. | 05-20-2010 |
Susan Alie, Stoneham, MA US
Patent application number | Description | Published |
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20090261464 | Getter Formed By Laser-Treatment and Methods of Making Same - The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an embodiment, the laser treating comprises irradiating the silicon surface with a plurality of laser pulses adding gettering microstructure to the treated surface. Semiconductor based packaged devices, e.g. MEMS, are given as examples hereof. | 10-22-2009 |
20100090347 | APPARATUS AND METHOD FOR CONTACT FORMATION IN SEMICONDUCTOR DEVICES - The present disclosure is directed to the preparation of a semiconductor substrate, and metallization of a contact area on the substrate to produce a contact in a semiconductor device. The method includes pre-treating the substrate by ultra fast laser treatment of a contact area, and depositing an interconnect metal layer on the contact area to create a contact. The process may include depositing a layer of dielectric-forming material on the substrate and removing a portion of the dielectric material from the substrate to reveal a contact area, prior to laser treating and metallization. | 04-15-2010 |
20110121424 | LOW OXYGEN CONTENT SEMICONDUCTOR MATERIAL FOR SURFACE ENHANCED PHOTONIC DEVICES AND ASSOCIATED METHODS - Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation-absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C. to about 1100° C., wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment. | 05-26-2011 |
20120068289 | Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods - Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer. | 03-22-2012 |
Susan A. Alie, Stoneham, MA US
Patent application number | Description | Published |
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20150298170 | Ultrasonic Transducers in Complementary Metal Oxide Semiconductor (CMOS) Wafers and Related Apparatus and Methods - Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer. | 10-22-2015 |