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Alie
Emmanuel Alie, Grasse FR
| Patent application number | Description | Published |
|---|---|---|
| 20100070719 | SLAVE AND A MASTER DEVICE, A SYSTEM INCORPORATING THE DEVICES, AND A METHOD OF OPERATING THE SLAVE DEVICE - The electronic slave device ( | 03-18-2010 |
| 20100182033 | TESTABLE INTEGRATED CIRCUIT AND TEST METHOD - An integrated circuit ( | 07-22-2010 |
Jean-Claude Alie, Bagstogne BE
| Patent application number | Description | Published |
|---|---|---|
| 20100122757 | TIRE AND ELECTRONIC DEVICE ASSEMBLY - A tire and electronic device assembly includes an electronic device in which a transponder tag is coupled to a dipole antenna formed by first and second elongate antenna segments. The transponder tag and at least a portion of the dipole antenna are at least partially embedded within a compound having compatible permittivity and conductivity with operation of the dipole antenna and the electronic device is mounted to the tire apex in a position between the tire apex and the tire sidewall at a predetermined distance above an ending of the tire ply and in an orientation placing a longitudinal axis of the dipole antenna perpendicular to the cords of the tire ply. | 05-20-2010 |
Jean-Claude Alie, Bastogne BE
| Patent application number | Description | Published |
|---|---|---|
| 20100123584 | METHOD OF EMBEDDING AN ELECTRONIC DEVICE IN A TIRE - A method for embedding a RFID tag in a tire includes: selecting a compound having compatible permittivity and conductivity with operation of a tag dipole antenna; embedding a tag transponder device and at least a portion of the dipole antenna within the compound; orienting the tag to place a longitudinal axis of the dipole antenna perpendicular to cords of a tire ply in an uncured tire; and placing the tag between a tire apex and a tire sidewall of the uncured tire, at a predetermined distance above an ending of the tire ply. The tag may be positioned axially between a tire chafer ending and a tire apex ending and mounted to the tire apex a distance of at least 10 mm above the ply ending. The method may include substantially encapsulating the transponder device and coupled ends of the dipole antenna in the compound; and extending from the encapsulated dipole coupled ends compound-free dipole end segments. | 05-20-2010 |
Susan Alie, Stoneham, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090261464 | Getter Formed By Laser-Treatment and Methods of Making Same - The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an embodiment, the laser treating comprises irradiating the silicon surface with a plurality of laser pulses adding gettering microstructure to the treated surface. Semiconductor based packaged devices, e.g. MEMS, are given as examples hereof. | 10-22-2009 |
| 20100090347 | APPARATUS AND METHOD FOR CONTACT FORMATION IN SEMICONDUCTOR DEVICES - The present disclosure is directed to the preparation of a semiconductor substrate, and metallization of a contact area on the substrate to produce a contact in a semiconductor device. The method includes pre-treating the substrate by ultra fast laser treatment of a contact area, and depositing an interconnect metal layer on the contact area to create a contact. The process may include depositing a layer of dielectric-forming material on the substrate and removing a portion of the dielectric material from the substrate to reveal a contact area, prior to laser treating and metallization. | 04-15-2010 |
| 20110121424 | LOW OXYGEN CONTENT SEMICONDUCTOR MATERIAL FOR SURFACE ENHANCED PHOTONIC DEVICES AND ASSOCIATED METHODS - Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation-absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C. to about 1100° C., wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment. | 05-26-2011 |