| Patent application number | Description | Published |
|---|
| 20090079001 | MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR - In one embodiment, an ESD device is configured to include a zener diode and a P-N diode. | 03-26-2009 |
| 20090079022 | METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR - In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage. | 03-26-2009 |
| 20090162988 | METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR - In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage. | 06-25-2009 |
| 20090250720 | TRANSIENT VOLTAGE SUPPRESSOR AND METHODS - Transient voltage suppressor and method for manufacturing the transient voltage suppressor having a dopant or carrier concentration in a portion of a gate region near a Zener region that is different from a dopant concentration in a portion of a gate region that is away from the Zener region. | 10-08-2009 |
| 20090273868 | TRANSIENT VOLTAGE SUPPRESSOR AND METHOD - A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event. | 11-05-2009 |
| 20090273876 | TRANSIENT VOLTAGE SUPPRESSOR AND METHOD - A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event. | 11-05-2009 |
| 20090302424 | METHOD OF FORMING A BI-DIRECTIONAL DIODE AND STRUCTURE THEREFOR - In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic. | 12-10-2009 |
| 20100006889 | LOW CLAMP VOLTAGE ESD DEVICE AND METHOD THEREFOR - In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode. | 01-14-2010 |
| 20100060349 | METHOD OF FORMING AN INTEGRATED SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR - In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance. | 03-11-2010 |
| 20100090306 | TWO TERMINAL MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR - In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. | 04-15-2010 |
| 20100194465 | TEMPERATURE COMPENSATED CURRENT SOURCE AND METHOD THEREFOR - In one embodiment, a temperature compensated current source includes a depletion mode transistor coupled in series with an active semiconductor device that adjust the depletion mode transistor to minimize variations in the current due to temperature changes. | 08-05-2010 |
| 20100311211 | TWO TERMINAL MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR - In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. | 12-09-2010 |
| 20100314660 | TWO TERMINAL MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR - In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. In another embodiment, the ESD devices has an asymmetrical characteristic. | 12-16-2010 |
| 20110021009 | LOW CLAMP VOLTAGE ESD METHOD - In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode. | 01-27-2011 |
