| Patent application number | Description | Published |
|---|
| 20080197439 | Semiconductor Device And Method For Manufacturing Same - A semiconductor device including a Schottky diode of the trench-junction-barrier type having an integrated PN diode, and a corresponding method for manufacturing the device, are provided. An n layer is provided on an n | 08-21-2008 |
| 20090032897 | Semiconductor Device and Method for Its Manufacture - In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and having additional properties compared to usual TSBS elements which make possible adaptation of the electrical properties. The TSBS-pn diodes are produced using special manufacturing methods, are arranged in their physical properties such that they are suitable for use in a rectifier for a motor vehicle generator, and are also able to be operated as Z diodes. | 02-05-2009 |
| 20090206438 | Semiconductor component - A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current. | 08-20-2009 |
| 20100237456 | SEMICONDUCTOR DEVICE AND METHOD FOR ITS MANUFACTURE - A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos. | 09-23-2010 |
| 20100244559 | RECTIFIER CIRCUIT - Rectifier circuits which are usable, instead of diodes, for rectifying alternating voltages, and which, like diodes, form two-terminal networks having a cathode terminal and an anode terminal. The power loss of these rectifier circuits is clearly less that the power loss of silicon p-n diodes. These rectifier circuits also include voltage clamping functions. | 09-30-2010 |
| 20100259137 | GENERATOR INCLUDING A RECTIFIER SYSTEM - A generator, for example a three-phase generator including an associated rectifier system, is used, for example for the electrical voltage supply of a motor vehicle. The AC voltage produced by the generator is rectified by the rectifier system having a plurality of rectifying elements | 10-14-2010 |
| 20100301387 | SEMICONDUCTOR DEVICE AND METHOD FOR ITS PRODUCTION - A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon substrate, and having a p-doped SiGe layer, which is contiguous to a second n-doped silicon epitaxial layer and forms a heterojunction diode, which is situated above the first n-doped silicon epitaxial layer and in which the pn-junction is situated within the p-doped SiGe layer. The first n-silicon epitaxial layer has a higher doping concentration than the second n-silicon epitaxial layer. Situated between the two n-doped epitaxial layers is at least one p-doped emitter trough, which forms a buried emitter, a pn-junction both to the first n-doped silicon epitaxial layer and also to the second n-doped silicon epitaxial layer being formed, and the at least one emitter trough being completely enclosed by the two epitaxial layers. | 12-02-2010 |
| 20110095399 | Method For Manufacturing Semiconductor Chips From A Wafer - A method is for manufacturing semiconductor chips from a wafer which includes a plurality of semiconductor chips. Defects in the crystal structure of the chips may be substantially reduced by producing rupture joints in the surface of the wafer after the wafer has been produced, and by breaking the wafer along the rupture joints to separate the semiconductor chips. | 04-28-2011 |
