Patent application number | Description | Published |
20120079773 | METHOD OF FABRICATING A POLISHING PAD WITH AN END-POINT DETECTION REGION FOR EDDY CURRENT END-POINT DETECTION - Methods of fabricating polishing pads with end-point detection regions for polishing semiconductor substrates using eddy current end-point detection are described. | 04-05-2012 |
20120083191 | POLISHING PAD FOR EDDY CURRENT END-POINT DETECTION - Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described. | 04-05-2012 |
20120083192 | HOMOGENEOUS POLISHING PAD FOR EDDY CURRENT END-POINT DETECTION - Homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described. | 04-05-2012 |
20120190281 | POLISHING PAD WITH CONCENTRIC OR APPROXIMATELY CONCENTRIC POLYGON GROOVE PATTERN - Polishing pads with concentric or approximately concentric polygon groove patterns are described. Methods of fabricating polishing pads with concentric or approximately concentric polygon groove patterns are also described. | 07-26-2012 |
20130137350 | POLISHING PAD WITH FOUNDATION LAYER AND POLISHING SURFACE LAYER - Polishing pads with foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer. A polishing surface layer is bonded to the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a foundation layer are also described. | 05-30-2013 |
20130324020 | POLISHING PAD WITH POLISHING SURFACE LAYER HAVING AN APERTURE OR OPENING ABOVE A TRANSPARENT FOUNDATION LAYER - Polishing pads with a polishing surface layer having an aperture or opening above a transparent foundation layer are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a global top surface and a transparent region. A polishing surface layer is attached to the global top surface of the foundation layer. The polishing surface layer has a polishing surface and a back surface. An aperture is disposed in the polishing pad from the back surface through to the polishing surface of the polishing surface layer, and aligned with the transparent region of the foundation layer. The foundation layer provides an impermeable seal for the aperture at the back surface of the polishing surface layer. Methods of fabricating such polishing pads are also described. | 12-05-2013 |
20140102010 | Polishing Pad for Eddy Current End-Point Detection - Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described. | 04-17-2014 |
20140123563 | HOMOGENEOUS POLISHING PAD FOR EDDY CURRENT END-POINT DETECTION - Homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described. | 05-08-2014 |
20140206268 | POLISHING PAD HAVING POLISHING SURFACE WITH CONTINUOUS PROTRUSIONS - Polishing pads having a polishing surface with continuous protrusions are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions are also described. | 07-24-2014 |
20140273777 | POLISHING PAD HAVING POLISHING SURFACE WITH CONTINUOUS PROTRUSIONS HAVING TAPERED SIDEWALLS - Polishing pads having a polishing surface with continuous protrusions having tapered sidewalls are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions having tapered sidewalls are also described. | 09-18-2014 |