Patent application number | Description | Published |
20080276869 | Substrate holder - In order to achieve an as uniform as possible temperature over the entire surface of the substrate ( | 11-13-2008 |
20110042643 | Optoelectronic Semiconductor Chip Having a Multiple Quantum Well Structure - An optoelectronic semiconductor chip is specified, which has an active zone ( | 02-24-2011 |
20120298951 | Optoelectronic Semiconductor Body with a Quantum Well Structure - An optoelectronic semiconductor body is provided, which contains a semiconductor material which is composed of a first component and a second component different from the first component. The semiconductor body comprises a quantum well structure, which is arranged between an n-conducting layer ( | 11-29-2012 |
20120298964 | Light-Emitting Semiconductor Chip - A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak. | 11-29-2012 |
20120313138 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND USE OF AN INTERMEDIATE LAYER BASED ON AlGaN - An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa 1-xN-based intermediate layer where 012-13-2012 | |
20120319126 | Optoelectronic Semiconductor Chip and Method for Fabrication Thereof - An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region the first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region. | 12-20-2012 |
20150194570 | Light-Emitting Semiconductor Chip - A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak. | 07-09-2015 |
20150249181 | OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF - The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region. | 09-03-2015 |