| Patent application number | Description | Published |
|---|
| 20080197110 | PULSED-PLASMA SYSTEM WITH PULSED SAMPLE BIAS FOR ETCHING SEMICONDUCTOR SUBSTRATES - A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process. | 08-21-2008 |
| 20080206483 | PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION - A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power. | 08-28-2008 |
| 20080206900 | PULSED-PLASMA SYSTEM FOR ETCHING SEMICONDUCTOR STRUCTURES - A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is of a duration sufficiently short to substantially inhibit micro-loading in a reaction region adjacent to the sample, while the OFF state of the duty cycle is of a duration sufficiently long to substantially enable removal of a set of etch by-products from the reaction region. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process. | 08-28-2008 |
| 20080206901 | PULSED-PLASMA SYSTEM WITH PULSED REACTION GAS REPLENISH FOR ETCHING SEMICONDUCTOR STRUCTURES - A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish. | 08-28-2008 |
| 20080230008 | PLASMA SPECIES AND UNIFORMITY CONTROL THROUGH PULSED VHF OPERATION - An apparatus for processing a substrate has a chamber, a high frequency power source, and a low frequency power source. The chamber has a first and second electrode disposed therein. The high frequency power source is electrically coupled to either the first or second electrode to supply a first RF signal. The low frequency power source electrically coupled to either the first or second electrode to supply a second RF signal. The first RF signal is pulsed on and off so as to enhance electron loss in the chamber. | 09-25-2008 |
| 20080236490 | PLASMA REACTOR WITH AN OVERHEAD INDUCTIVE ANTENNA AND AN OVERHEAD GAS DISTRIBUTION SHOWERHEAD - A plasma reactor for processing a workpiece includes a gas distribution showerhead having a lid, a manifold having a top surface facing the lid and a bottom surface opposing the top surface. Top surface channels in the manifold top surface form a first set of plural paths extending from a first gas input point to plural path ends of the top surface channels. Gas distribution orifices extend axially through the manifold at respective ones of the path ends. Bottom surface channels in the manifold bottom surface form plural paths extending from locations at each of the gas distribution orifices to plural gas distribution path ends. The showerhead further includes a showerhead piece facing the manifold bottom surface and having plural gas injection orifices extending through the showerhead piece. | 10-02-2008 |
| 20090061544 | TRAJECTORY BASED CONTROL OF PLASMA PROCESSING - A method of controlling a plasma processing according to trajectories connecting start and stop values of parameters controlling the plasma processing, for example, gas flow and power supplied to generate the plasma. The trajectories maybe based on equations including at least time as a variable. At set times within the processing, the values of the parameters are updated according to the predetermined trajectories. Sensors associated with the chamber may also adjust the trajectories, provide variables to the equations, and/or define the trajectories. | 03-05-2009 |
| 20090236447 | METHOD AND APPARATUS FOR CONTROLLING GAS INJECTION IN PROCESS CHAMBER - Methods and apparatus for processing substrates are provided herein. In some embodiments, a gas distribution apparatus may include a plurality of gas inlets configured to deliver a process gas to a process chamber; and a plurality of flow controllers having outlets coupled to the plurality of gas inlets for independently controlling the flow rate through each of the plurality of gas inlets. The gas distribution apparatus may be coupled to a process chamber for controlling the delivery of one or more process gases thereto. | 09-24-2009 |
