| Patent application number | Description | Published |
|---|
| 20090218317 | METHOD TO CONTROL UNIFORMITY USING TRI-ZONE SHOWERHEAD - Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable. | 09-03-2009 |
| 20090272492 | PLASMA REACTOR WITH CENTER-FED MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS - A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub. | 11-05-2009 |
| 20090274590 | PLASMA REACTOR ELECTROSTATIC CHUCK HAVING A COAXIAL RF FEED AND MULTIZONE AC HEATER POWER TRANSMISSION THROUGH THE COAXIAL FEED - A workpiece support pedestal includes an insulating puck having a workpiece support surface, a conductive plate underlying the puck, the puck containing electrical utilities and thermal media channels, and an axially translatable coaxial RF path assembly underlying the conductive plate. The coaxial RF path assembly includes a center conductor, a grounded outer conductor and a tubular insulator separating the center and outer conductors, whereby the puck, plate and coaxial RF path assembly comprise a movable assembly whose axial movement is controlled by a lift servo. Plural conduits extend axially through the center conductor and are coupled to the thermal media utilities. Plural electrical conductors extend axially through the tubular insulator and are connected to the electrical utilities. | 11-05-2009 |
| 20090275206 | PLASMA PROCESS EMPLOYING MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS - A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge. | 11-05-2009 |
| 20110068082 | METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH INDEPENDENT WAFER EDGE PROCESS GAS INJECTION - The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge. | 03-24-2011 |
| Patent application number | Description | Published |
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| 20090056629 | Cathode liner with wafer edge gas injection in a plasma reactor chamber - The disclosure concerns a wafer support for use in a plasma reactor chamber, in which the wafer support has a wafer edge gas injector adjacent and surrounding the wafer edge. | 03-05-2009 |
| 20090057269 | Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection - The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge. | 03-05-2009 |
| 20090139963 | Multiple frequency pulsing of multiple coil source to control plasma ion density radial distribution - A method is provided for processing a workpiece supported on a support surface in a chamber of a plasma reactor. A process gas is introduced into the chamber and a plasma is generated with pulse-modulated RF power. The method comprises successively repeating the following cycle: (a) concentrating the plasma in the chamber in a center-high plasma ion distribution for a first on-time duration; (b) permitting plasma to drift during a first off-time duration away from the center-high plasma ion distribution; (c) concentrating the plasma in the chamber in an edge-high plasma ion distribution for a second on-time duration; and (d) permitting plasma to drift during a second off-time duration away from the edge-high plasma ion distribution. The method further comprises adjusting a plasma process rate near a center of the workpiece by adjusting a duty cycle of the first on-time and first off-time. The method also comprises adjusting a plasma process rate near a periphery of the workpiece by adjusting a duty cycle of the second on-time and second off-time. | 06-04-2009 |
| 20090142930 | Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process - A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels. | 06-04-2009 |
| 20090156011 | Method of controlling CD bias and CD microloading by changing the ceiling-to-wafer gap in a plasma reactor - In a plasma etch process, critical dimension (CD), CD bias and CD bias microloading are controlled independently of plasma process conditions or parameters, such as RF power levels, pressure and gas flow rate, by depressing or elevating the workpiece support pedestal to vary the gap between the workpiece and the chamber ceiling facing the workpiece, using an axially adjustable workpiece support. | 06-18-2009 |
