| Patent application number | Description | Published |
|---|
| 20100091810 | MULTI-LEVEL INTEGRATED PHOTONIC DEVICES - A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets. | 04-15-2010 |
| 20100099209 | MULTI-LEVEL INTEGRATED PHOTONIC DEVICES - A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets. | 04-22-2010 |
| 20110019708 | HIGH SMSR UNIDIRECTIONAL ETCHED LASERS AND LOW BACK-REFLECTION PHOTONIC DEVICE - Unidirectionality of lasers is enhanced by forming one or more etched gaps ( | 01-27-2011 |
| 20110032967 | SINGLE LONGITUDINAL MODE LASER DIODE - A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process. | 02-10-2011 |
| Patent application number | Description | Published |
|---|
| 20080219316 | Laser and Monitoring Photodetector with Polymer Light Guide - A surface emitting laser ( | 09-11-2008 |
| 20080298413 | Low Cost InGaAlN Based Lasers - A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length l | 12-04-2008 |
| 20090067465 | MULTIPLE CAVITY ETCHED-FACET DFB LASERS - A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative position with respect to the gratings. This creates a difference in the phase between each of the etched facets and the gratings which changes the operational characteristics of the two laser cavities such that at least one of the lasers provides acceptable performance. As a result, the two cavity arrangement greatly improves the yield of the fabricated chips. | 03-12-2009 |
| 20100015743 | ETCHED-FACET RIDGE LASERS WITH ETCH-STOP - A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer. | 01-21-2010 |
| 20100091809 | Low Cost InGaAlN Based Lasers - A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length l | 04-15-2010 |
| 20100091811 | Low Cost InGaAlN Based Lasers - A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length l | 04-15-2010 |
| 20110317734 | SPATIAL FILTERS - An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam. | 12-29-2011 |
