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Aldona
Aldona Dlugosz, Alta SE
| Patent application number | Description | Published |
|---|---|---|
| 20110104282 | New Therapy of Treatment of the Irritable Bowel Syndrome - The invention provides for new methods for treatment and diagnosis of irritable bowel syndrome (IBS). In particular, there is disclosed the use of a | 05-05-2011 |
Aldona Jagminiene, Vilnius LT
| Patent application number | Description | Published |
|---|---|---|
| 20100304562 | ELECTROLESS DEPOSITION OF COBALT ALLOYS - Systems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit. | 12-02-2010 |
Aldona Sashchiuk, Nazareth-Illit IL
| Patent application number | Description | Published |
|---|---|---|
| 20080296534 | Core-Alloyed Shell Semiconductor Nanocrystals - The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. Preferably, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure. | 12-04-2008 |
| 20110006285 | CORE-ALLOYED SHELL SEMICONDUCTOR NANOCRYSTALS - The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. In certain embodiments, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSe | 01-13-2011 |
Aldona Zalewska, Kielpin PL
| Patent application number | Description | Published |
|---|---|---|
| 20090280405 | PROCESS FOR MODIFYING THE INTERFACIAL RESISTANCE OF A METALLIC LITHIUM ELECTRODE - The invention relates to a method of modifying the interfacial resistance of a lithium metal electrode immersed in an electrolytic solution, which consists in depositing a film of metal oxide particles on the surface of this electrode. | 11-12-2009 |