Patent application number | Description | Published |
20080208507 | METHOD AND APPARATUS FOR DIAGNOSING BROKEN SCAN CHAIN BASED ON LEAKAGE LIGHT EMISSION - A mechanism for diagnosing broken scan chains based on leakage light emission is provided. An image capture mechanism detects light emission from leakage current in complementary metal oxide semiconductor (CMOS) devices. The diagnosis mechanism identifies devices with unexpected light emission. An unexpected amount of light emission may indicate that a transistor is turned off when it should be turned on or vice versa. All possible inputs may be tested to determine whether a problem exists with transistors in latches or with transistors in clock buffers. Broken points in the scan chain may then be determined based on the locations of unexpected light emission. | 08-28-2008 |
20090064164 | METHOD OF VIRTUALIZATION AND OS-LEVEL THERMAL MANAGEMENT AND MULTITHREADED PROCESSOR WITH VIRTUALIZATION AND OS-LEVEL THERMAL MANAGEMENT - A program product and method of managing task execution on an integrated circuit chip such as a chip-level multiprocessor (CMP) with Simultaneous MultiThreading (SMT). Multiple chip operating units or cores have chip sensors (temperature sensors or counters) for monitoring temperature in units. Task execution is monitored for hot tasks and especially for hotspots. Task execution is balanced, thermally, to minimize hot spots. Thermal balancing may include Simultaneous MultiThreading (SMT) heat balancing, chip-level multiprocessors (CMP) heat balancing, deferring execution of identified hot tasks, migrating identified hot tasks from a current core to a colder core, User-specified Core-hopping, and SMT hardware threading. | 03-05-2009 |
20090112352 | EQUIVALENT GATE COUNT YIELD ESTIMATION FOR INTEGRATED CIRCUIT DEVICES - A storage medium including a method of modeling yield for semiconductor products includes determining expected faults for each of a plurality of library elements by running a critical area analysis on each of the library elements, and assessing, from the critical area analysis, an expected number of faults per unit area, and comparing the same to actual observed faults on previously manufactured semiconductor products. Thereafter, the expected number of faults for each library element is updated in response to observed yield. A database is established, which includes the die size and expected faults for each of the library elements. Integrated circuit product die size is estimated, and library elements to be used to create the integrated circuit die are selected. Fault and size data for each of the selected library elements are obtained, the adjusted estimated faults for each of the library elements are summed, and estimated yield is calculated. | 04-30-2009 |
20100080445 | Constructing Variability Maps by Correlating Off-State Leakage Emission Images to Layout Information - Improved techniques are disclosed for monitoring or sensing process variations in integrated circuit designs. Such techniques provide such improvements by constructing variability maps correlating leakage emission images to layout information. By way of example, a method for monitoring one or more manufacturing process variations associated with a device under test (e.g., integrated circuit) comprises the following steps. An emission image representing an energy emission associated with a leakage current of the device under test is obtained. The emission image is correlated with a layout of the device under test to form a cross emission image. Common structures on the cross emission image are selected and identified as regions of interest. One or more variability measures (e.g., figures of merit) are calculated based on the energy emissions associated with the regions of interest. A variability map is created based on the calculated variability measures, wherein the variability map is useable to monitor the one or more manufacturing process variations associated with the device under test. | 04-01-2010 |
20100253379 | Method and Apparatus for Probing a Wafer - A semiconductor wafer resting on a contact element has a spatially distributed force applied to its frontside and an equal and opposing force applied to its backside. The contact element comprises a solid immersion lens (SIL), and has an area less than the area of the wafer, but no less than the larger of the area of an optical collection area and an electrical probe assembly. The equal and opposing forces cause the wafer to conform to the shape of the contact element. Measurements, including electrical testing, optical probing and wafer characterization are performed on the wafer. | 10-07-2010 |
20130278285 | MINIMUM-SPACING CIRCUIT DESIGN AND LAYOUT FOR PICA - PICA test circuits are shown that include a first transistor and a second transistor laid out drain-to-drain, such that a gap between respective drain regions of the first and second transistors has a minimum size allowed by a given fabrication technology; a first NOR gate having an output connected to the drain region of the first transistor and accepting a first select signal and an input signal; and a second NOR gate having an output connected to the drain region of the second transistor and accepting a second select signal and the input signal. One of said NOR gates biases the connected transistor's drain region, according to the select signal of said NOR gate, to inhibit an optical emission when said connected transistor is triggered. | 10-24-2013 |
20130280828 | MINIMUM-SPACING CIRCUIT DESIGN AND LAYOUT FOR PICA - PICA test methods are shown that includes forming semiconductor devices having proximal light emitting regions, such that the light emitting regions are grouped into distinct shapes separated by a distance governed by a target resolution size; forming logic circuits to control the semiconductor devices; activating the one or more semiconductor devices by providing an input signal; and suppressing light emissions from one or more of the activated semiconductor devices by providing one or more select signals to the logic circuits. | 10-24-2013 |
20140176183 | MINIMUM-SPACING CIRCUIT DESIGN AND LAYOUT FOR PICA - PICA test circuits are shown that include a first transistor and a second transistor laid out drain-to-drain, such that a gap between respective drain regions of the first and second transistors has a minimum size allowed by a given fabrication technology. | 06-26-2014 |
20140298128 | SCAN CHAIN LATCH DESIGN THAT IMPROVES TESTABILITY OF INTEGRATED CIRCUITS - A scan chain latch circuit, a method of operating a latch circuit in a scan chain, and a computer-readable medium having stored thereon a data structure defining a scan chain latch circuit for instantiation on a semiconductor die are disclosed. In an embodiment, the scan chain latch circuit comprises a first latch for holding one data value, a second latch for holding another data value, and a multiplexor. The one data value is applied to a first data input of the multiplexor and the another data value is applied to a second data input of the multiplexor. An alternating clock signal is applied to a select input of the multiplexor to control the output of the multiplexor, wherein the output of the multiplexor toggles between the two data values held in the two latches at a defined frequency. | 10-02-2014 |