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| 20100238561 | Image forming optical system and electronic image pickup apparatus using with the same - There is provided a zoom lens with a wide angle of view at the wide angle end and a high zoom ratio that has good imaging performance throughout the entire zoom range with chromatic aberrations being corrected favorably. In a zoom lens including, in order from the object side to the image side, a first lens group having a positive refracting power, a second lens group having a negative refracting power, and an image side lens group having a positive refracting power, in which the distance between the first lens group and the second lens group changes during zooming, wherein a refractive optical element A that has a positive refracting power if its object side surface and its image side surface are interfaces with air is provided between an object side base optical element B and an image side base optical element C to constitute therewith a three-piece cemented optical element D in the first lens group, there is at least one optical element having a positive refracting power disposed closer to the object side than the three-piece cemented optical element D, and the zoom lens satisfies a certain condition. | 09-23-2010 |
| 20110279909 | Image forming optical system and electronic image pickup apparatus equipped with same - An image forming optical system includes in order from an object side to an image side, a first lens group having a positive refractive power, a second lens group having a negative refractive power, and an image-side lens group having a positive refractive power. A distance between the first lens group and the second lens group changes at the time of zooming. A refractive optical element A having a positive refractive power is positioned in the first lens group. The image forming optical system satisfies the following conditional expression (1-1), conditional expression (1-2), and conditional expression (2). | 11-17-2011 |
| 20110286104 | Image forming optical system and electronic image pickup apparatus using the same - A zoom lens including, in order from the object side to the image side, a first lens group including a positive refractive power, a second lens group having a negative refractive power, an image side lens group having a positive refractive power, wherein the distance between the first lens group and the second lens group changes during zooming, and a refractive optical element A, which has a positive refractive power when its object side surface and image side surface are exposed to air, is provided in the first lens group and located closest to the object side in the first lens group, and the refractive optical element A is cemented together with an optical element B. The Abbe constant νd and the relative partial dispersion θgF of the refractive optical element A satisfies certain conditions. | 11-24-2011 |
| 20110286109 | Image forming optical system and electronic image pickup apparatus using the same - A zoom lens including, in order from the object side to the image side, a first lens group having a positive refractive power, a second lens group having a negative refractive power, an image side lens group having a positive refractive power, wherein the distance between the first lens group and the second lens group changes during zooming, a refractive optical element A, which has a positive refractive power when its object side surface and image side surface are exposed to air, is provided in the first lens group and located closest to the object side in the first lens group, and the refractive optical element A is cemented together with an optical element B. The Abbe constant νd and the partial dispersion ratio θgF of the refractive optical element A satisfies certain conditions. | 11-24-2011 |
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| 20090206053 | PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching method etching an organic underlayer film formed on a target substrate by using a plasma of a processing gas via a pattered mask layer formed on the underlayer film. The processing gas includes a gaseous mixture of an oxygen-containing gas and a sulfur-containing gas not having oxygen. The oxygen-containing gas is one of O | 08-20-2009 |
| 20100029020 | SUBSTRATE PROCESSING CONTROL METHOD AND STORAGE MEDIUM - In a substrate processing control method, a first process acquires a first-reflectance-spectrum of a beam reflected from the first-fine-structure and a second-reflectance-spectrum of a beam reflected from the second-fine-structure for each of varying-pattern-dimensions of the first-fine-structure when the pattern-dimension of the first-fine-structure is varied. A second process acquires reference-spectrum-data for each of the varying-pattern-dimensions of the first-fine-structure by overlapping the first-reflectance-spectrum with the second-reflectance-spectrum. A third process actually measures beams reflected from the first and the second-fine-structure, respectively, after irradiating light beam on to the substrate and acquiring reflectance-spectrums of the actual-measured beams as actual-measured spectrum data. A fourth process compares the actual-measured spectrum data with the respective reference-spectrum data and acquiring, as the measured pattern-dimension, one of the varying-pattern-dimensions corresponding to reference-spectrum data that is closely matches with the actual-measured spectrum data. A final process ends the processing of the substrate if the measured pattern-dimension reaches a value. | 02-04-2010 |
| 20100086670 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM - A substrate processing method includes performing a deposition process of depositing a thin film on the substrate while depressurizing the inside of the processing chamber and introducing the gas thereinto; and, while the deposition process is being performed, irradiating light, which is transmitted through a monitoring window installed at the processing chamber, toward the inside of the processing chamber through the monitoring window, and monitoring a reflection light intensity of reflection light by receiving the reflection light through the monitoring window. The substrate processing method further includes measuring a temporal variation in the reflection light intensity during the deposition process and calculating a termination time of the deposition process based on a measurement value of the temporal variation; and terminating the deposition process by setting the termination time as an end point of the deposition process. | 04-08-2010 |
| 20100154821 | COMPONENT CLEANING METHOD AND STORAGE MEDIUM - A method for cleaning a component in a substrate processing apparatus including a processing chamber, foreign materials being attached to the component, at least a part of the component being exposed inside the processing chamber, and the substrate processing apparatus being adapted to load and unload a foreign material adsorbing member into and from the processing chamber. The method includes loading the foreign material adsorbing member into the processing chamber; generating a plasma nearer the component than the foreign material adsorbing member; extinguishing the plasma; and unloading the foreign material adsorbing member from the processing chamber, wherein the generation and the extinguishment of the plasma are repeated alternately and the foreign material adsorbing member has a positive potential at least during the extinguishment of the plasma. | 06-24-2010 |
| 20110155322 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber in which a target substrate is processed; an application electrode and a facing electrode provided to face each other in the processing chamber, a plasma generation space being formed between the application electrode and the facing electrode; and an RF power supply connected to the application electrode, an RF power being supplied from the RF power supply to the application electrode. At least one of the application electrode and the facing electrode includes a base formed of a metal, and a dielectric body inserted into the base, one or more metal plate electrodes being buried in the dielectric body. | 06-30-2011 |
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| 20090233450 | Plasma etchimg method and plasma etching apparatus - The present invention is a plasma etching method comprising: a cleaning step (a) in which a cleaning gas is supplied into a processing vessel and the cleaning gas is made plasma, so that a deposit adhering to an inside of the processing vessel is removed by means of the plasma; a film depositing step (b), succeeding the cleaning step (a), in which a film depositing gas containing carbon and fluorine is supplied into the processing vessel and the film depositing gas is made plasma, so that a film containing carbon and fluorine is deposited on the inside of the processing vessel by means of the plasma; an etching step (c), succeeding the film depositing step (b), in which a substrate is placed on a stage inside the processing vessel, and an etching gas is supplied into the processing vessel and the etching gas is made plasma, so that the substrate is etched by means of the plasma; and an unloading step (d), succeeding the etching step (c), in which the substrate is unloaded from the processing vessel; wherein, after the unloading step (d) has been finished, the cleaning step (a) to the unloading step (d) are repeated again. | 09-17-2009 |
| 20100206846 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber. An ion trap partitions the accommodating chamber into a plasma producing chamber and a substrate processing chamber. High-frequency antennas are disposed in the plasma producing chamber. A process gas is introduced into the plasma producing chamber. The substrate is mounted on a mounting stage disposed in the substrate processing chamber, and a bias voltage is applied to the mounting stage. The ion trap has grounded conductors and insulating materials covering surfaces of the conductors. | 08-19-2010 |
| 20110217796 | ETCHING METHOD AND APPARATUS - An etching method capable of controlling the film thickness of a hard mask layer uniformly is provided. A plasma etching is performed on a native oxide film by using an etching gas containing, for example, CF | 09-08-2011 |
