| Patent application number | Description | Published |
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| 20090008195 | Vibration isolator - There is provided a vibration isolator in which a restriction passage for causing a main fluid chamber and a sub-fluid chamber to communicate with each other is changed over to one of a first restriction passage and a second restriction passage according to a change in the frequency of vibrations in a short period of time, and the size of the isolator is made small efficiently. A plunger member | 01-08-2009 |
| 20100270716 | ANTI-VIBRATION APPARATUS - A liquid (L) sealed in a first mounting member ( | 10-28-2010 |
| 20110155887 | ANTI-VIBRATION DEVICE - An anti-vibration device includes a tubular first attachment member connected to either a vibration generating section or a vibration receiving section; a second attachment member connected to the other of the vibration generating section and the vibration receiving section; a first rubber elastic body elastically interconnecting the first and second attachment members; a liquid containing a first liquid and a second liquid which are insoluble in each other, the second liquid having a smaller surface tension than the first liquid, and the second liquid in the liquid weighing less than the first liquid in the liquid; a partition member partitioning the inside of the first attachment member into a main liquid chamber and a sub liquid chamber, the main liquid chamber having a first partition wall and having a portion of the liquid enclosed therein, an inner volume of the main liquid chamber changing due to deformation of the first rubber elastic body, a part of the first partition wall being formed of the first rubber elastic body; and the sub liquid chamber having a second partition wall and having a portion of the liquid enclosed therein, at least a part of the second partition wall being adapted to be deformable, the liquid being enclosed in the main liquid chamber and the sub liquid chamber; and an orifice passage provided between the outer peripheral surface of the partition member and the inner peripheral surface of the first attachment member so as to communicate the main liquid chamber and the sub liquid chamber. | 06-30-2011 |
| Patent application number | Description | Published |
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| 20080299758 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A high-density N-type diffusion layer | 12-04-2008 |
| 20080299763 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap. | 12-04-2008 |
| 20090263951 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the steps of forming an insulating film on a semiconductor substrate, forming a plurality of wiring trenches in the insulating film, forming a plurality of wirings in the plurality of wiring trenches, forming a resist mask having an opening for selectively exposing one of regions between the plurality of wirings, on the insulating film and the plurality of wirings, forming an air gap trench by removing the insulating film from the selectively exposed one of the regions between the plurality of wirings by etching using the resist mask, and forming an air gap in the air gap trench by depositing an inter-layer insulating film over the plurality of wirings after removal of the resist mask. | 10-22-2009 |
| 20090278261 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - An interlayer insulating film is formed on the upper surface of a semiconductor substrate, and lower-level interconnects are formed in the interlayer insulating film. A liner insulating film is formed on the upper surfaces of the interlayer insulating film and lower-level interconnects. An interlayer insulating film is formed on the upper surface of the liner insulating film. Upper-level interconnects are formed in the interlayer insulating film. The lower-level interconnects and the upper-level interconnects are connected with each other through vias. Parts of the liner insulating film formed in via-adjacent regions have a greater thickness than a part thereof formed outside the via-adjacent regions. | 11-12-2009 |
| 20090302473 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: a first interlayer insulating film formed over a semiconductor substrate; a plurality of interconnects formed in the first interlayer insulating film; and a via and a dummy via, which are formed in the first interlayer insulating film so as to connect to at least one of the plurality of interconnects. A void is selectively formed between adjacent ones of the interconnects in the first interlayer insulating film. The dummy via is formed under an interconnect which is in contact with the void, so as to connect to the interconnect. The via and the dummy via are surrounded by the first interlayer insulating film with no void interposed therebetween. | 12-10-2009 |
| 20090302475 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first interlayer insulating film, and a plurality of first interconnects formed in the first interlayer insulating film. A void is selectively formed between adjacent ones of the plurality of first interconnects in the first interlayer insulating film, and a cap insulating film is formed in a region located over the void and between the interconnects. Respective widths of a lower end and an upper end of the void are substantially the same as a gap between the interconnects located adjacent to the void, and the lower end of the void is located lower than lower ends of the first interconnects located adjacent to the void. | 12-10-2009 |
