Patent application number | Description | Published |
20090082952 | Route Search Apparatus - An apparatus calculates a coefficient b that reflects a road slope condition of each section based on an altitude difference of both ends of each section stored in a memory, and identifies a carbon dioxide discharge amount that changes in proportion to the distance of each section by multiplying a distance D of each section by the coefficient b and another coefficient Ec. Further, the apparatus identifies a discharge amount that changes in proportion to a travel time of each section by multiplying a travel time T of each section and yet another coefficient a, and identifies a discharge amount based on an index that changes in proportion to the number of stops in each section by multiplying an index AEE by the coefficient Ec and still yet another coefficient c for performing a carbon-conscious routing between a start place and a destination. | 03-26-2009 |
20090265097 | APPARATUS FOR VEHICLE NAVIGATION - A vehicle navigation apparatus having a travel time map display function includes: a display unit for displaying a map around the vehicle together with a route and an expected travel time of the route; and a calculation unit for calculating the expected travel time of the route that is extending from a start point to a destination, when the travel time map display function is shown as an option in a menu screen. Upon selection of the function, the expected travel time of the route is displayed under a circumstance that (a) multiple registered points are pre-registered to the navigation apparatus, (b) one of the multiple registered points serves as the start point of multiple routes, and (c) each of the rest of the multiple registered points respectively serves as the destination of the multiple routes. | 10-22-2009 |
20100148988 | Information provision system and in-vehicle apparatus - An information provision system, which includes (i) a navigation apparatus in a vehicle and (ii) an information center, provides an occupant of the vehicle with information. The navigation apparatus and information center communicate via a wireless communication link. The navigation apparatus wirelessly acquires reception position information, which indicates several reception positions, from the information center. When determining that the vehicle reaches one of the reception positions, the navigation apparatus wirelessly acquires, in association with the reached reception position, display-related information containing (i) display position information indicating a display position and (ii) at-display-position window information indicating contents of a display window displayed at the display position. When determining that the vehicle reaches the display position, the navigation apparatus displays the contents of the corresponding display window indicated by the acquired at-display-position window information. | 06-17-2010 |
20110029281 | Link travel time calculation device and method for calculating link travel time interval - A link travel time calculation device includes: a collection element for collecting a travel position and a transit time in each vehicle; and a link travel time calculation element. The calculation element calculates a total travel time interval of all sections based on the travel position and the transit time in a predetermined time period. The calculation element calculates a first travel time interval of an upstream section and a second travel time interval of a downstream section based on the travel position and the transit time. The calculation element calculates a travel time interval of the object link with respect to the predetermined time period by subtracting a sum of the first travel time interval and the second travel time interval from the total travel time interval. | 02-03-2011 |
Patent application number | Description | Published |
20080213935 | Manufacturing Method of Solid-State Imaging Device - Provided is a manufacturing method of a CCD solid-state imaging device having such an impurity concentration distribution with which shading is reduced and formation of a buried channel endowed with a large saturation signal charge amount is made possible. The manufacturing method includes: an oxide layer forming step of forming an oxide layer ( | 09-04-2008 |
20090268068 | DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE - A driving method used for a solid-state imaging device according to the present invention includes: imaging an object for a first storage time when a shutter is open, in a first state that is a state where either at least a part of the peripheral circuitry is suspended or a consumption current of the peripheral circuitry is limited; imaging, in the first state, a dark output signal image including only a dark output for a second storage time when the shutter is closed; converting the dark output signal image to correspond to the image obtained for the first storage time and subtracting, from the signal image of the object, the converted dark output signal image or converting the dark output signal image to correspond to the image obtained for the second storage time and subtracting, from the signal image of the object, the converted dark output signal image. | 10-29-2009 |
20090268072 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND CAMERA - To provide a solid-state imaging device which suppresses light emission caused by hot electrons, and reduces the difference in the impact of heat emission between fields. In the solid-state imaging device in the present invention, the final-stage source-follower circuit within the output circuit includes a drive transistor and a load transistor connected to the drive transistor, and, by applying, to the load transistor, a control signal having different levels for a first period including a charge sweep-out period and an exposure period of the light-receiving elements in a signal outputting period, and a second period which is a period excluding the charge sweep-out period from the signal outputting period, the source-to-drain voltage of the final-stage drive transistor in the first period is made lower than the source-to-drain voltage in the second period. | 10-29-2009 |
20110316107 | SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD OF THE SENSOR - A single crystal silicon layer is formed on a principal surface of a first wafer by epitaxial growth. A silicon oxide layer is formed on the single crystal silicon layer. Next, a defect layer is formed inside the single crystal silicon layer by ion implantation, and then, the second wafer is bonded to the silicon oxide layer on the first wafer. After that, an SOI wafer including the silicon oxide layer formed on the second wafer and the single crystal silicon layer formed on the silicon oxide layer is formed by separating the first wafer including the single crystal silicon layer from the second wafer including the single crystal silicon layer in the defect layer. Then, a photodiode is formed in the single crystal silicon layer. An interconnect layer is formed on a surface of the single crystal silicon layer which is opposite to the silicon oxide layer. | 12-29-2011 |
20130002921 | SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND CAMERA - A solid-state imaging device is provided in which transfer failure of signal charges is suppressed. The solid-state imaging device includes a plurality of photoelectric conversion units, a plurality of vertical transfer units having a plurality of vertical transfer electrodes, a plurality of horizontal transfer units having a plurality of horizontal transfer electrodes, and an intermediate transfer unit having a branch transfer electrode. In the first horizontal transfer unit, one of the horizontal transfer electrodes includes a plurality of column direction electrodes that are disposed adjacent to one another in the vertical direction and transfer the signal charges via the intermediate transfer unit to the second horizontal transfer unit. The vertical transfer electrode, the horizontal transfer electrodes, and the branch transfer electrode are a single layer electrode. | 01-03-2013 |
20130043373 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a plurality of photoelectric conversion units arranged in rows and columns in a pixel region; a plurality of vertical transfer units arranged for corresponding columns of the photoelectric conversion units, and transfer, in a column direction, the signal charges read from the corresponding columns of the photoelectric conversion units; a first and a second horizontal transfer units arranged in parallel, and transfer, in a row direction, the signal charges transferred by the vertical transfer units; and a first and a second output units which (i) include floating diffusion units each formed in a region adjacent to an output end of a corresponding one of the first and the second horizontal transfer units and (ii) output, as electric signals, the transferred signal charges, wherein the floating diffusion units are disposed at greater intervals than adjacent ones of the horizontal transfer units. | 02-21-2013 |
20140051203 | MANUFACTURING METHOD OF SOLID-STATE IMAGE SENSOR - A single crystal silicon layer is formed on a principal surface of a first wafer by epitaxial growth. A silicon oxide layer is formed on the single crystal silicon layer. Next, a defect layer is formed inside the single crystal silicon layer by ion implantation, and then, the second wafer is bonded to the silicon oxide layer on the first wafer. After that, an SOI wafer including the silicon oxide layer formed on the second wafer and the single crystal silicon layer formed on the silicon oxide layer is formed by separating the first wafer including the single crystal silicon layer from the second wafer including the single crystal silicon layer in the defect layer. Then, a photodiode is formed in the single crystal silicon layer. An interconnect layer is formed on a surface of the single crystal silicon layer which is opposite to the silicon oxide layer. | 02-20-2014 |
20150301177 | DISTANCE MEASURING METHOD AND DISTANCE MEASURING SYSTEM - In a TOF distance measurement employing light, the accuracy of distance measurement is improved without a significant increase in cost. A light source emits light to an object during an emission period. A sensor converts received reflected light (delay time τ) into an electrical signal during a plurality of signal accumulation periods, and accommodates the electrical signal. The signal accumulation period is set so that an accumulated signal amount varies depending on a distance to the object. The emission intensity of the light source is changed during the emission period so that the accumulated signal amount and the distance to the object has a nonlinear relationship. | 10-22-2015 |