| Patent application number | Description | Published |
|---|
| 20080211011 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - It is made possible to provide a nonvolatile semiconductor memory element that can be miniaturized and can store multi-level data. A nonvolatile semiconductor memory element includes a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; and a gate structure formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region. The gate structure includes a tunnel insulating layer, a resistance variable layer formed above the tunnel insulating layer and made of a metal oxide, and a first electrode formed on the resistance variable layer. | 09-04-2008 |
| 20080271990 | LANTHANOID ALUMINATE FILM FABRICATION METHOD - A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO | 11-06-2008 |
| 20090107586 | METHOD FOR MANUFACTURING A LANTHANUM OXIDE COMPOUND - A method for manufacturing a lanthanum oxide compound on a substrate includes: setting the number of H | 04-30-2009 |
| 20090186474 | Nonvolatile semiconductor storage device and manufacturing method therefor - A nonvolatile semiconductor storage device includes a semiconductor substrate; a plurality of isolation regions formed in the semiconductor substrate; an element-forming region formed between adjacent isolation regions; a first gate insulating film provided on the element-forming region; a floating gate electrode which is provided on the first gate insulating film and in which a width of a lower hem facing the element-forming region is narrower than a width of the element-forming region in a section taken in a direction perpendicular to a direction in which the isolation regions extend; a second gate insulating film provided on the floating gate electrode; and a control gate electrode provided on the second gate insulating film. | 07-23-2009 |
| 20090242963 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - In a semiconductor device, the side walls are made of SiO | 10-01-2009 |
| 20090315659 | Coil component and method for producing the same - A coil component having an easily discernible orientation, and a method of producing such a coil component that facilitates the injection of resin. A coil component includes a core with a winding portion, first and second flanges disposed on either end of the winding portion, and a winding accommodating region defined by the winding portion and the first and second flanges, terminal electrodes disposed on the second flange and a winding wound about the winding portion and connected to the terminal electrodes. An insulating resin is formed over the winding at the winding accommodating region. A marker made from a material the same as the insulating resin is provided at outer peripheral surface of the flanges. | 12-24-2009 |
| 20100065886 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to an aspect of the present invention, there is provided a semiconductor device including: a substrate that includes a semiconductor region including Ge as a primary component; a compound layer that is formed above the semiconductor region, that includes Ge and that has a non-metallic characteristic; an insulator film that is formed above the compound layer; an electrode that is formed above the insulator film; and source/drain regions that is formed in the substrate so as to sandwich the electrode therebetween. | 03-18-2010 |
| 20100078704 | SEMICONDUCTOR STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film. | 04-01-2010 |
